BYV26DGP & BYV26EGP
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
1.0 A
800 V, 1000 V
30 A
75 ns
1.3 V
175 °C
®
ted*
aten
P
* Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
DO-204AC (DO-15)
Features
•
•
•
•
•
•
•
Cavity-free glass-passivated junction
Ultrafast reverse recovery time
Low forward voltage drop
Low switching losses, high efficiency
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Maximum Ratings
T
A
= 25 °C unless otherwise specified
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375" (9.5 mm)
lead length (See Fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non repetitive peak reverse energy
(1)
Operating junction and storage temperature range
Notes:
(1) Peak reverse energy measured at I
R
= 400 mA, T
J
= T
J
max. on inductive load, t = 20 µs
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
E
RSM
T
J
, T
STG
BYV26DGP
800
560
800
1.0
30
10
- 65 to + 175
BYV26EGP
1000
700
1000
Unit
V
V
V
A
A
mj
°C
Document Number 88554
10-Aug-05
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1
BYV26DGP & BYV26EGP
Vishay General Semiconductor
Electrical Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Minimum avalanche
breakdown voltage
Maximum instantaneous
forward voltage
Maximum DC reverse current
at rated DC blocking voltage
Max. reverse recovery time
Typical junction capacitance
Test condition
at 100 µA
at 1.0 A
T
J
= 25 °C
T
J
= 175 °C
T
A
= 25 °C
T
A
= 165 °C
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
at 4.0 V, 1 MHz
Symbol
V
BR
V
F
I
R
t
rr
C
J
BYV26DGP
900
2.5
1.3
5.0
150
75
15
BYV26EGP
1100
Unit
V
V
µA
ns
pF
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Typical thermal
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on P.C.B. with
0.5 x 0.5" (12 x 12 mm) copper pads
(2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink
resistance
(1,2)
Symbol
R
θJA
R
θJL
BYV26DGP
70
16
BYV26EGP
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
Average Forward Rectified Current (A)
1.2
100
Resistive or
Inductive Load
T
L
= Lead
Temperature
Lead Mounted
on Heatsinks
10 ms, Single Half Sine-Wave
T
J
= T
J
max.
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
Mounted on P.C.B.
0.375” (9.5mm) Lead Length
on 0.5 x 0.5” (12 x 12mm)
Copper Pads
T
A
= Ambient Temperature
Peak Forward Surge Current (A)
10
1
1
10
100
Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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Document Number 88554
10-Aug-05
BYV26DGP & BYV26EGP
Vishay General Semiconductor
100
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
Instantaneous Forward Current (A)
10
T
j
= 150 °C
1
T
j
= 125 °C
0.1
T
j
= 25 °C
Junction Capacitance, pF
T
j
= 175 °C
10
0.01
0.2
0.6
1
1.4
1.8
2.2
2.6
3
3.4
1
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Voltage Characteristics
Figure 5. Typical Junction Capacitance
Instantaneous Reverse Leakage Current (µA)
100
T
j
= 175 °C
T
j
= 165 °C
100
10
T
j
= 125 °C
1
Transient Thermal Impedance (°C/W)
10
0.1
T
j
= 25 °C
0.01
Mounted on P.C.B.
0.375” (9.5mm) Lead Length
on 0.47 x 0.47” (12 x 12mm)
Copper Pads
0.001
0
20
40
60
80
100
1
0.01
0.1
1
10
100
Percent of Peak Reverse
Voltage
(%)
t, Pulse Duration (sec.)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
Document Number 88554
10-Aug-05
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3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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