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BYV28-150/4

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3.5A, 150V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

器件类别：分立半导体    二极管   

厂商名称：Vishay(威世)

厂商官网：http://www.vishay.com

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Vishay(威世)
包装说明
ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
针数
2
Reach Compliance Code
not_compliant
ECCN代码
EAR99
其他特性
METALLURGICALLY BONDED
应用
ULTRA FAST RECOVERY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
E-LALF-W2
JESD-609代码
e2
湿度敏感等级
1
最大非重复峰值正向电流
90 A
元件数量
1
相数
1
端子数量
2
最大输出电流
3.5 A
封装主体材料
GLASS
封装形状
ELLIPTICAL
封装形式
LONG FORM
峰值回流温度（摄氏度）
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
150 V
最大反向恢复时间
0.03 µs
表面贴装
NO
技术
AVALANCHE
端子面层
TIN SILVER
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
BYV28/...
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass Diode
Features
•
•
•
•
•
•
•
Controlled avalanche characteristic
Low forward voltage
e2
Ultra fast recovery time
Glass passivated junction
Hermetically sealed package
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
949588
Mechanical Data
Case:
SOD-64 Sintered glass case
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
approx. 858 mg
Applications
Very fast rectification e.g. for switch mode power sup-
ply
Parts Table
Part
BYV28-50
BYV28-100
BYV28-150
BYV28-200
Type differentiation
V
R
= 50 V; I
FAV
= 3.5 A
V
R
= 100 V; I
FAV
= 3.5 A
V
R
= 150 V; I
FAV
= 3.5 A
V
R
= 200 V; I
FAV
= 3.5 A
SOD-64
SOD-64
SOD-64
SOD-64
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Peak reverse voltage, non
repetitive
Test condition
see electrical characteristics
Part
BYV28/50
BYV28/100
BYV28/150
BYV28/200
Reverse voltage = Repetitive
peak reverse voltage
see electrical characteristics
BYV28/50
BYV28/100
BYV28/150
BYV28/200
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
Junction and storage
temperature range
I
(BR)R
= 1 A, T
j
= 175 °C
t
p
= 10 ms, half sinewave
Symbol
V
RSM
V
RSM
V
RSM
V
RSM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
FAV
E
R
Value
55
110
165
220
50
100
150
200
90
25
3.5
20
Unit
V
V
V
V
V
V
V
V
A
A
A
mJ
T
j
= T
stg
- 55 to + 175
°C
Document Number 86044
Rev. 1.6, 14-Apr-05
www.vishay.com
1
BYV28/...
Vishay Semiconductors
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing
25 mm
Symbol
R
thJA
R
thJA
Value
25
70
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
I
F
= 5 A
I
F
= 5 A, T
j
= 175 °C
V
R
= V
RRM
V
RSM
V
R
= V
RRM
, T
j
= 165 °C
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
Test condition
Symbol
V
F
V
F
I
R
I
R
I
R
t
rr
Min
Typ.
Max
1.1
0.89
1
100
150
30
Unit
V
V
µA
µA
µA
ns
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
R
thJA
–Therm. Resist. Junction/ Ambient ( K/W)
40
4.0
I
FAV
–Average Forward Current( A )
30
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
R
thJA
≤
70 K/W
PCB: d = 25 mm
V
R
= V
RRM
half sinewave
R
thJA
≤
25 K/W
l = 10 mm
20
l
l
10
T
L
= constant
0
0
5
10
15
20
25
30
l – Lead Length ( mm )
94 9548
16454
40 60 80 100 120 140 160 180
T
amb
– Ambient Temperature ( °C )
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs. Ambient Temperature
100.000
I
R
– Reverse Current (A)
1000
V
R
= V
RRM
– Forward Current (A)
10.000
T
j
= 175 °C
1.000
T
j
= 25 °C
0.100
0.010
100
10
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
16453
V
F
– Forward Voltage ( V )
F
1
25
16455
50
75
100 125 150 175
T
j
– Junction Temperature ( ° C )
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Reverse Current vs. Junction Temperature
www.vishay.com
2
Document Number 86044
Rev. 1.6, 14-Apr-05
BYV28/...
Vishay Semiconductors
P – Reverse Power Dissipation ( mW)
R
60
C
D
– Diode Capacitance ( pF )
250
V
R
= V
RRM
f = 1 MHz
200
150
100
50
0
0.1
16457
50
40
30
20
10
0
25
50
75
100 125 150 175
T
j
– Junction Temperature ( °C )
P
R
–Limit
@80 % V
R
P
R
–Limit
@100 % V
R
1.0
10.0
100.0
16456
V
R
– Reverse Voltage ( V )
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
ISO Method E
1.35 (0.053) max.
26(1.014) min.
4.0 (0.156) max.
26 (1.014) min.
94 9587
Document Number 86044
Rev. 1.6, 14-Apr-05
www.vishay.com
3
BYV28/...
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
4
Document Number 86044
Rev. 1.6, 14-Apr-05
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参数对比
与BYV28-150/4相近的元器件有：BYV28-50/4、BYV28-100-E3/54、BYV28-100/4、BYV28-200-E3/54、BYV28-50-E3/54、BYV28-150-E3/54。描述及对比如下：
型号 BYV28-150/4 BYV28-50/4 BYV28-100-E3/54 BYV28-100/4 BYV28-200-E3/54 BYV28-50-E3/54 BYV28-150-E3/54
描述 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3.5A, 150V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3.5A, 50V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3.5A, 100V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3.5A, 100V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3.5A, 200V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3.5A, 50V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3.5A, 150V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
包装说明 ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 E-LALF-W2 ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 E-LALF-W2 E-LALF-W2 E-LALF-W2
针数 2 2 2 2 2 2 2
Reach Compliance Code not_compliant compliant unknown compliant unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED
应用 ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2
JESD-609代码 e2 e2 e2 e2 e2 e2 e2
最大非重复峰值正向电流 90 A 90 A 90 A 90 A 90 A 90 A 90 A
元件数量 1 1 1 1 1 1 1
相数 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2
最大输出电流 3.5 A 3.5 A 3.5 A 3.5 A 3.5 A 3.5 A 3.5 A
封装主体材料 GLASS GLASS GLASS GLASS GLASS GLASS GLASS
封装形状 ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 150 V 50 V 100 V 100 V 200 V 50 V 150 V
最大反向恢复时间 0.03 µs 0.03 µs 0.03 µs 0.03 µs 0.03 µs 0.03 µs 0.03 µs
表面贴装 NO NO NO NO NO NO NO
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子面层 TIN SILVER TIN SILVER TIN SILVER TIN SILVER TIN SILVER TIN SILVER TIN SILVER
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
厂商名称 Vishay(威世) Vishay(威世) - - Vishay(威世) Vishay(威世) Vishay(威世)
Base Number Matches 1 1 1 1 - - -
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器件捷径:
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