BYV410-600
2 February 2018
Dual enhanced ultrafast power diode
Product data sheet
1. General description
Dual enhanced ultrafast power diode in a SOT78 (TO-220AB) plastic package.
2. Features and benefits
•
•
•
•
High thermal cycling performance
Low on state losses
Low thermal resistance
Soft recovery characteristic minimizes power consuming oscillations
3. Applications
•
•
Dual mode (DCM and CCM) PFC
Power Factor Correction (PFC) for Interleaved Topology
4. Quick reference data
Table 1. Quick reference data
Symbol
V
R
I
FRM
I
FSM
Parameter
reverse voltage
Conditions
DC
Min
-
-
-
-
Typ
-
-
-
-
Max
600
20
132
120
Unit
V
A
A
A
repetitive peak forward δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 108 °C; per
current
diode
non-repetitive peak
forward current
t
p
= 8.3 ms; T
j(init)
= 25 °C; SIN; per
diode
t
p
= 10 ms; T
j(init)
= 25 °C; SIN; per
diode
Static characteristics
V
F
forward voltage
I
F
= 10 A; T
j
= 150 °C
I
F
= 10 A; T
j
= 25 °C;
Fig. 4
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C;
Fig. 5
-
20
35
ns
-
-
1.3
1.4
1.9
2.1
V
V
WeEn Semiconductors
BYV410-600
Dual enhanced ultrafast power diode
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
A1
K
A2
K
anode 1
cathode
anode 2
mounting base; cathode
Simplified outline
mb
Graphic symbol
A1
K
A2
sym125
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
BYV410-600
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
BYV410-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
2 February 2018
2 / 10
WeEn Semiconductors
BYV410-600
Dual enhanced ultrafast power diode
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
T
stg
T
j
24
P
tot
(W)
18
0.2
0.1
12
12
4.0
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average output current
repetitive peak forward
current
non-repetitive peak
forward current
storage temperature
junction temperature
Conditions
Min
-
-
Max
600
600
600
20
20
132
120
150
150
003aad263
Unit
V
V
V
A
A
A
A
°C
°C
DC
δ = 0.5 ; T
mb
≤ 92 °C; SQW; both diodes
conducting;
Fig. 1; Fig. 2
δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 108 °C; per
diode
t
p
= 8.3 ms; T
j(init)
= 25 °C; SIN; per diode
t
p
= 10 ms; T
j(init)
= 25 °C; SIN; per diode
-
-
-
-
-
-40
-
003aad262
24
P
tot
(W)
18
2.2
2.8
δ=1
0.5
a = 1.57
1.9
6
6
0
0
5
10
I
F(AV)
(A)
15
0
0
5
I
F(AV)
(A)
10
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
BYV410-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
2 February 2018
3 / 10
WeEn Semiconductors
BYV410-600
Dual enhanced ultrafast power diode
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
R
th(j-mb)
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
10
Z
th(j-mb)
(K/W)
1
Conditions
with heatsink compound; per diode;
Fig. 3
with heatsink compound; both diodes
conducting
Min
-
-
-
Typ
-
-
60
Max
2.4
1.6
-
Unit
K/W
K/W
K/W
R
th(j-a)
001aag912
10
- 1
P
10
- 2
t
p
10
- 3
10
- 6
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
1
t
T
t
p
(s)
10
δ=
t
p
T
Fig. 3. Transient thermal impedance from junction to mounting base per diode as a function of pulse width
BYV410-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
2 February 2018
4 / 10
WeEn Semiconductors
BYV410-600
Dual enhanced ultrafast power diode
9. Characteristics
Table 6. Characteristics
Symbol
V
F
I
R
Parameter
forward voltage
reverse current
Conditions
I
F
= 10 A; T
j
= 150 °C
I
F
= 10 A; T
j
= 25 °C;
Fig. 4
V
R
= 600 V
V
R
= 600 V; T
j
= 100 °C
Dynamic characteristics
t
rr
I
RM
Q
r
V
FR
reverse recovery time
peak reverse recovery
current
recovered charge
forward recovery
voltage
12
I
F
(A)
Min
-
-
-
-
-
-
-
-
Typ
1.3
1.4
13
1
20
1.4
15
3.2
Max
1.9
2.1
50
1.5
35
1.9
28
-
Unit
V
V
µA
mA
ns
A
nC
V
Static characteristics
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C;
Fig. 5
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
Fig. 5
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs
I
F
= 1 A; dI
F
/dt = 100 A/µs;
Fig. 6
003aad261
I
F
dl
F
dt
8
t
rr
time
(1)
(2)
(3)
25 %
Q
r
100 %
4
I
R
0
0
1
2
3
I
RM
003aac562
V
F
(V)
Fig. 5.
Fig. 4. Forward current as a function of forward voltage
BYV410-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
2 February 2018
5 / 10
