BYV95 and BYV96 Series
Vishay Semiconductors
formerly General Semiconductor
Miniature Glass Passivated
Fast Switching Rectifier
DO204AP
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
Features
Reverse Voltage
200 to 1000 V
Forward Current
1.5 A
d*
nte
ate
P
0.150 (3.8)
0.100 (2.5)
DIA.
0.240 (6.1)
MAX.
• High temperature metallurgically bonded construction
• Hermetically sealed package
• Cavity-free glass passivated junction
• 1.5 Ampere operation at T
A
=55°C with no thermal runaway
• Typical I
R
less than 0.1µA
• Capable of meeting environmental standards of
MIL-S-19500
• Fast switching for high efficiency
• High temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
Mechanical Data
1.0 (25.4)
MIN.
*
Brazed-lead assembly is covered by Patent No. 3,930,306
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (9.5mm) lead length at T
A
=55°C
Peak forward surge current, 10ms single half sine-
wave superimposed on rated load at T
J
=165°C
Maximum full load reverse current,
full cycle average, 0.375”, (9.5mm)
lead length at
Typical thermal resistance
(1)
Dimensions in inches and (millimeters)
Case:
JEDEC DO-204AP Solid glass body
Terminals:
Solder plated axial leads, solderable per MIL-
STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.02 ounce, 0.56 gram
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Symbols BYV95A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
R
ΘJA
T
J
T
STG
200
140
200
BYV95B
400
280
400
BYV95C
600
420
600
1.5
35
1.0
150
55
-65 to +175
-65 to +200
BYV96D
800
560
800
BYV96E
1000
700
1000
Units
V
V
V
A
A
µA
°C/W
°C
°C
T
J
=25°C
T
J
=165°C
Operating junction temperature range
Storage temperature range
Electrical Characteristics
Maximum instantaneous forward
voltage at 1.5A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time at
I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Typical junction capacitance at 4.0V, 1MHz
Ratings at 25°C ambient temperature unless otherwise specified.
Minimum avalanche breakdown voltage at 100µA
T
J
=25°C
T
J
=165°C
V
(BR)
V
F
I
R
t
rr
C
J
300
500
700
1.6
1.35
2.0
900
1100
V
V
µA
250
10
300
ns
pF
Notes:
(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
Document Number 88559
14-Mar-02
www.vishay.com
1
BYV95 and BYV96 Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
Average Forward Rectified Current (A)
2.0
35
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
Peak Forward Surge Current (A)
T
J
= 165°C
10ms Single Half Sine-Wave
(JEDEC Method)
Resistive or
Inductive Load
1.5
30
25
1.0
20
0.5
15
0.375" (9.5mm) Lead Length
0
25
50
75
100
125
150
175
10
1
10
100
Ambient Temperature (°C)
Number of Cycles at 50 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
10
20
Fig. 4 – Typical Reverse
Characteristics
Instantaneous Reverse Current (µA)
10
T
J
= 125°C
1
Instantaneous Forward Current (A)
T
J
= 100°C
1
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
0.1
T
J
= 75°C
0.1
T
J
= 25°C
0.01
0
20
40
60
80
100
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance
30
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
Junction Capacitance (pF)
10
1
1
10
Reverse Voltage (V)
100
www.vishay.com
2
Document Number 88559
14-Mar-02
