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BYV96E

RECTIFIER DIODE
整流二极管

器件类别:半导体    分立半导体   

厂商名称:BILIN

厂商官网:http://www.galaxycn.com/

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器件参数
参数名称
属性值
状态
ACTIVE
二极管类型
RECTIFIER DIODE
文档预览
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FEATURES
GALAXY ELECTRICAL
BYV96D(Z)---BYV96E(Z)
VOLTAGE RANGE: 800 --- 1000 V
CURRENT: 1.5 A
FAST RECOVERY RECTIFIER
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Is opropanol
and similar s olvents
The plas tic material carries U/L recognition 94V-0
DO - 15
MECHANICAL DATA
Case:JEDEC DO-15,molded plastic
Term inals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014ounces ,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unles s otherwis e specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYV 96D
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
BYV 96E
1000
700
1000
1.5
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
800
560
800
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
50.0
A
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.6
5.0
100.0
300
18
45
-55-----+150
-55-----+150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note2)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
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2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261048
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
50
N.1.
10
N.1.
BYV96D(Z)---BYV96E(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
t
rr
+0.5A
( - )
D.U.T.
(+)
50VDC
(APPROX)
(-)
1
N.1.
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
( + )
0
-0.25A
-1.0A
NOTES:1.RISETIM =7ns M INP IM DANCE=1M .22pF
E
AX. UT PE
2.RISETIM =10ns M SOURCEIM EDANCE
E
AX.
P
=5O
SE TIM BASE FOR 50/100 ns /cm
T E
1cm
FIG.2 --FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT
FIG.3 --PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
50
1.5
40
1.2
0.9
30
AMPERES
0.6
20
0.3
Sngle Phase
Half Wave 60Hz
Resistive or
Inductive Load
0
25
50
10
T
J
=125
8.3ms Single Half
Sine-Wave
0
0
1
2
4
6
10
20
40
60
100
75
1
0
0
125
1
5
0
175
AMBIENT TEMPERATURE,
FIG.4--TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT
REVERSE CURRENT,MCROAMPERES
NUMBER OF CYCLES AT 60 Hz
FIG.5--TYPICAL REVERSE CHARACTERISTICS
10
100
10
4
2
1.0
T
J
-
125
1.0
AMPERES
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6 0.8
1.0
1.2
T
J
=25
Pulse Width=300
µ
S
0.1
T
J
-
25
0.01
1.4
1.6
1.8
2.0
0
20
40
60
80
100
120
140
FORWARD VOLTAGE,VOLTS
PERCENT OF FATED REVERSEVOLTAGE,%
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Document Number 0261048
BL
GALAXY ELECTRICAL
2.
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参数对比
与BYV96E相近的元器件有:BYV96DZ、BYV96EZ、BYV96D。描述及对比如下:
型号 BYV96E BYV96DZ BYV96EZ BYV96D
描述 RECTIFIER DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AP 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AP 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AP
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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