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BYV98-050-TAP

Rectifiers 4.0 Amp 50 Volt 70 Amp IFSM

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
包装说明
E-LALF-W2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
应用
ULTRA FAST RECOVERY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
E-LALF-W2
JESD-609代码
e2
湿度敏感等级
1
最大非重复峰值正向电流
70 A
元件数量
1
相数
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-55 °C
最大输出电流
4 A
封装主体材料
GLASS
封装形状
ELLIPTICAL
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
50 V
最大反向恢复时间
0.035 µs
表面贴装
NO
技术
AVALANCHE
端子面层
Tin/Silver (Sn/Ag)
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
BYV98-50, BYV98-100, BYV98-150, BYV98-200
www.vishay.com
Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass Diode
FEATURES
• High reverse voltage
• Glass passivated
• Low reverse current
• Low forward voltage drop
• Hermetically sealed axial-leaded glass envelope
949588
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
SOD-64
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 858 mg
APPLICATIONS
• Switched mode power supplies
• High-frequency inverter circuits
ORDERING INFORMATION
(Example)
DEVICE NAME
BYV98-200
BYV98-200
ORDERING CODE
BYV98-200-TR
BYV98-200-TAP
TAPED UNITS
2500 per 10" tape and reel
2500 per ammopack
MINIMUM ORDER QUANTITY
12 500
12 500
PARTS TABLE
PART
BYV98-50
BYV98-100
BYV98-150
BYV98-200
TYPE DIFFERENTIATION
V
R
= 50 V; I
F(AV)
= 4 A
V
R
= 100 V; I
F(AV)
= 4 A
V
R
= 150 V; I
F(AV)
= 4 A
V
R
= 200 V; I
F(AV)
= 4 A
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
Average forward current
Junction and storage temperature range
Non repetitive reverse avalanche energy
l
(BR)R
= 1 A
TEST CONDITION
PART
BYV98-50
See electrical characteristics
BYV98-100
BYV98-150
BYV98-200
t
p
= 10 ms, half sine wave
T
amb
= 30 °C, l = 10 mm
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
F(AV)
T
j
= T
stg
E
R
VALUE
50
100
150
200
70
4
- 55 to + 175
20
UNIT
V
V
V
V
A
A
°C
mJ
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
SYMBOL
R
thJA
VALUE
25
UNIT
K/W
Rev. 1.8, 11-Sep-12
Document Number: 86046
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYV98-50, BYV98-100, BYV98-150, BYV98-200
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Reverse current
TEST CONDITION
I
F
= 5 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
BYV98-50
Reverse breakdown voltage
I
R
= 100 μA
BYV98-100
BYV98-150
BYV98-200
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
PART
SYMBOL
V
F
I
R
I
R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
t
rr
MIN.
-
-
-
60
120
170
220
-
TYP.
-
-
-
-
-
-
-
-
MAX.
1.1
10
200
-
-
-
-
35
UNIT
V
μA
μA
V
V
V
V
ns
TYPICAL CHARACTERISTICS
(T
amb
= 25
C,
unless otherwise specified)
120
180
P – Reverse Power Dissipation ( mW)
R
C
D
– Diode Capacitance ( pF )
V
R
= V
RRM
100
80
60
40
BYV98–50
20
0
25
50
75
100 125 150 175
T
j
– Junction Temperature ( °C )
R
thJA
=
25 K/W
70 K/W
150 K/W
BYV98–150
BYV98–100
BYV98–200
160
140
120
100
80
60
40
20
0
0.1
1.0
10.0
V
R
– Reverse Voltage ( V )
100.0
15784
17194
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 3 - Diode Capacitance vs. Reverse Voltage
1000
V
R
= V
RRM
I
R
– Reverse Current (A)
I
FAV
–Average Forward Current( A )
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
15783
V
R
= V
RRM
half sinewave
R
thJA
= 25 K/W
l = 10 mm
100
10
R
thJA
= 70 K/W
PCB: d = 25 mm
20
60 80 100 120 140 160 180
T
amb
– Ambient Temperature ( °C )
40
1
25
15785
50
75
100 125 150 175
T
j
– Junction Temperature ( °C )
Fig. 2 - Max. Reverse Current vs. Junction Temperature
Fig. 4 - Max. Average Forward Current vs. Ambient Temperature
Rev. 1.8, 11-Sep-12
Document Number: 86046
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYV98-50, BYV98-100, BYV98-150, BYV98-200
www.vishay.com
Vishay Semiconductors
100.00
T
j
= 175°C
I
F
– Forward Current (A)
10.00
T
j
= 25 °C
1.00
0.10
0.01
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
F
– Forward Voltage ( V )
15782
Fig. 5 - Max. Forward Current vs. Forward Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Rev. 1.8, 11-Sep-12
Document Number: 86046
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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参数对比
与BYV98-050-TAP相近的元器件有:BYV98-150-TAP、BYV98-200-TR、BYV98-50-TR。描述及对比如下:
型号 BYV98-050-TAP BYV98-150-TAP BYV98-200-TR BYV98-50-TR
描述 Rectifiers 4.0 Amp 50 Volt 70 Amp IFSM Rectifiers 4.0 Amp 150 Volt 70 Amp IFSM Rectifiers 4.0 Amp 200 Volt 70 Amp IFSM Rectifiers AVALANCHE DIODE SOD64 STD-e2
是否无铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
包装说明 E-LALF-W2 HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 E-LALF-W2 E-LALF-W2
Reach Compliance Code unknown not_compliant unknown not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
应用 ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 E-LALF-W2 E-LALF-W2 E-LALF-W2 E-LALF-W2
JESD-609代码 e2 e2 e2 e2
湿度敏感等级 1 1 1 1
最大非重复峰值正向电流 70 A 70 A 70 A 70 A
元件数量 1 1 1 1
相数 1 1 1 1
端子数量 2 2 2 2
最高工作温度 175 °C 175 °C 175 °C 175 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C
最大输出电流 4 A 4 A 4 A 4 A
封装主体材料 GLASS GLASS GLASS GLASS
封装形状 ELLIPTICAL ELLIPTICAL ELLIPTICAL ELLIPTICAL
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM
峰值回流温度(摄氏度) NOT SPECIFIED 260 NOT SPECIFIED 260
最大重复峰值反向电压 50 V 150 V 200 V 50 V
最大反向恢复时间 0.035 µs 0.035 µs 0.035 µs 0.035 µs
表面贴装 NO NO NO NO
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子面层 Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag)
端子形式 WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL
处于峰值回流温度下的最长时间 NOT SPECIFIED 30 NOT SPECIFIED 30
最大正向电压 (VF) - 1.1 V 1.1 V 1.1 V
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