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BYW81P

描述:
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
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概述
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
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®
BYW81P-200
BYW81PI-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION :
Insulating voltage = 2500 V
RMS
Capacitance = 7 pF
A
K
K
A
DESCRIPTION
Single chip rectifier suited for switchmode power
supply and high frequency DC to DC converters.
Packaged in TO-220AC this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
I
F(RMS)
I
F(AV)
I
FSM
Tstg
Tj
RMS forward current
Average forward current
δ
= 0.5
BYW81P
BYW81PI
Tc=115°C
Tc=90°C
tp=10ms
sinusoidal
TO-220AC
(Plastic)
BYW81P-200
isolated
TO-220AC
(Plastic)
BYW81PI-200
Parameter
Value
35
15
15
200
- 40 to + 150
- 40 to + 150
Unit
A
A
Surge non repetitive forward current
Storage and junction temperature range
A
°C
°C
Symbol
V
RRM
Parameter
Repetitive peak reverse voltage
Value
200
Unit
V
October 1999 - Ed: 2D
1/6
BYW81P-200 / BYW81PI-200
THERMAL RESISTANCE
Symbol
Rth (j-c)
Junction to case
Parameter
BYW81P
BYW81PI
Value
2.0
3.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
I
R
*
T
j
= 25°C
T
j
= 100°C
V
F **
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
I
F
= 12 A
I
F
= 25 A
I
F
= 25 A
Test Conditions
V
R
= V
RRM
Min.
Typ.
Max.
20
1.5
0.85
1.05
1.15
Unit
µ
A
mA
V
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380
µ
s, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.65 x I
F(AV)
+ 0.016 x I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol
trr
T
j
= 25°C
Test Conditions
I
F
= 0.5A
I
R
= 1A
I
F
= 1A
V
R
= 30V
tfr
T
j
= 25
°
C
T
j
= 25
°
C
I
F
= 1A
V
FR
= 1.1 x V
F
I
F
= 1A
Irr = 0.25A
Min.
Typ.
Max.
25
Unit
ns
dI
F
/dt = -50A/µs
40
tr = 10 ns
15
ns
V
FP
tr = 10 ns
2
V
2/6
BYW81P-200 / BYW81PI-200
Fig.1 :
Average forward power dissipation versus
average forward current.
P F(av)(W)
=0.05
=0.1
=0.2
=0.5
=1
Fig.2 :
Peak current versus form factor.
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
350
300
250
200
T
IM(A)
T
IM
=tp/T
tp
150
100
P=10W
P=20W
P=30W
I F(av)(A)
50
=tp/T
tp
0.0
0
2.5
5
7.5
10
12.5
15
17.5
20
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig.3 :
Forward voltage drop versus forward
current (maximum values).
VFM(V)
Fig.4 :
Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
K
Zth(j-c) (tp. )
K =
Rth(j-c)
=0.5
=0.2
= 0 .1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IFM(A)
Tj= 125
o
C
0.5
T
0.2
Single pulse
0.1
1
10
100 200
0.1
1.0E-03
1.0E-02
tp(s)
1.0E-01
=tp/T
tp
1. 0E+00
Fig.5 :
Non repetitive surge peak forward current
versus overload duration.
(BYW81P)
160
150
140
130
120
110
100
90
80
70
60
50
40
IM
30
20
10
0
0.001
IM(A)
Fig.6 :
Non repetitive surge peak forward current
versus overload duration.
(BYW81PI)
120
110
100
90
80
70
60
50
40
30
IM
20
10
0
0.001
IM(A)
Tc=25
o
C
Tc=75
o
C
Tc=115
o
C
t
=0.5
Tc=25
o
C
Tc=60
o
C
Tc=90
o
C
t(s)
0.01
0.1
1
t
=0.5
t(s)
0.01
0.1
1
3/6
BYW81P-200 / BYW81PI-200
Fig.7 :
Average current
temperature.
(duty cycle : 0.5) (BYW81P)
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
IF(av)(A)
Rth(j-a)=Rth(j-c)
versus
ambient
Fig.8 :
Average current
temperature.
(duty cycle : 0.5) (BYW81PI)
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
IF(av)(A)
versus
ambient
Rth(j-a)=Rth(j-c)
Rth(j-a)=15
o
C/W
Rth(j-a)=15
o
C/W
=0.5
T
=0.5
T
=tp/T
tp
Tamb(
o
C)
=tp/T
tp
Tamb(
o
C)
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
Fig.9 :
Junction capacitance versus reverse
voltage applied (Typical values).
C(pF)
120
F=1Mhz Tj=25
o
C
Fig.10 :
Recovery charges versus dI
F
/dt.
60
50
40
30
QRR(nC)
90%CONFIDENCE
115
110
105
100
95
90
85
80
1
IF=IF(av)
Tj=100
O
C
Tj=25
O
C
20
10
VR(V)
10
30
50
70
0
1
dIF/dt(A/us)
10
20
40
60 80
Fig.11 :
Peak reverse current versus dIF/dt.
Fig.12 :
Dynamic parameters versus junction
temperature.
QRR;IRM[Tj]/QRR;IRM[Tj=125
o
C]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
IRM(A)
90%CONFIDENCE
1.50
1.25
Tj=100
O
C
IF=IF(av)
1.00
IRM
0.75
QRR
0.50
Tj=25
O
C
0.25
0.00
0
25
dIF/dt(A/us)
1
10
Tj(
o
C)
20
40 60 80
50
75
100
125
150
4/6
BYW81P-200 / BYW81PI-200
PACKAGE MECHANICAL DATA
TO-220AC (JEDEC outline)
H2
C
L5
ØI
L6
L2
D
L7
A
DIMENSIONS
REF.
A
C
D
E
F
F1
G
H2
L2
L4
L5
L6
L7
L9
M
Diam. I
Millimeters
Min.
Max.
4.40
4.60
1.23
1.32
2.40
2.72
0.49
0.70
0.61
0.88
1.14
1.70
4.95
5.15
10.00
10.40
16.40 typ.
13.00
14.00
2.65
2.95
15.25
15.75
6.20
6.60
3.50
3.93
2.6 typ.
3.75
3.85
Inches
Min.
Max.
0.173
0.181
0.048
0.051
0.094
0.107
0.019
0.027
0.024
0.034
0.044
0.066
0.194
0.202
0.393
0.409
0.645 typ.
0.511
0.551
0.104
0.116
0.600
0.620
0.244
0.259
0.137
0.154
0.102 typ.
0.147
0.151
L9
F1
L4
F
G
M
E
Marking
: Type number
Cooling method : C
Weight : 1.9 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
PACKAGE MECHANICAL DATA
TO-220AC (isolated)
B
I
L
b2
C
DIMENSIONS
REF.
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
L
l2
Millimeters
Min.
14.23
12.70
10.20
0.64
1.15
4.48
0.35
2.10
4.58
5.85
3.55
2.54
1.45
Max.
15.87
4.50
14.70
10.45
0.96
1.39
4.82
0.65
2.70
5.58
6.85
4.00
3.00
1.75
Inches
Min.
0.560
0.500
0.402
0.025
0.045
0.176
0.020
0.083
0.180
0.230
0.140
0.100
0.057
Max.
0.625
0.177
0.579
0.411
0.038
0.055
0.190
0.026
0.106
0.220
0.270
0.157
0.118
0.069
F
A
a1
l2
a2
b1
c1
e
c2
Marking
: Type number
Cooling method : C
Weight : 2.2 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
5/6
参数对比
与BYW81P相近的元器件有:BYW81、BYW81P200、BYW81PI-200、BYW81PI、BYW81PI200。描述及对比如下:
型号 BYW81P BYW81 BYW81P200 BYW81PI-200 BYW81PI BYW81PI200
描述 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
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