BYX10GP
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Junction Rectifier
FEATURES
• Superectifier structure for high reliability
application
• Cavity-free glass-passivated junction
• 0.36 A operation at T
A
= 40 °C with no thermal
runaway
• Typical I
R
less than 0.1 μA
• Solder dip 275 °C max. 10 s, per JESD 22-B106
SUPERECTIFIER
®
DO-41 (DO-204AL)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
I
R
V
F
at I
F
= 2.0 A
T
J
max.
Package
Circuit configuration
0.36 A
1600 V
15 A
2.0 μs
1.0 μA
1.6 V
175 °C
DO-41 (DO-204AL)
Single
For use in rectification of high voltage power supplies,
inverters, converters and freewheeling diodes application.
MECHANICAL DATA
Case:
DO-41 (DO-204AL), molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 40 °C
Peak forward surge current 10 ms single half sine-wave superimposed on rated load
per diode
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RWM
I
F(AV)
I
FSM
T
J
, T
STG
BYX10GP
1600
800
0.36
15
-65 to +175
UNIT
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
Maximum peak reverse current at rated peak
working reverse voltage
Typical reverse recovery time
Typical junction capacitance
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
TEST CONDITIONS
I
F
= 2.0 A
V
RWM
= 800 V
T
A
= 25 °C
T
A
= 25 °C
SYMBOL
V
F (1)
I
R (2)
t
rr
C
J
BYX10GP
1.6
1.0
2.0
5.0
UNIT
V
μA
μs
pF
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
V
R
= 4.0 V, 1 MHz
Revision: 19-Apr-17
Document Number: 89112
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYX10GP
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
BYX10GP
45
UNIT
°C/W
Note
(1)
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted
ORDERING INFORMATION
(Example)
PREFERRED P/N
BYX10GP-E3/54
UNIT WEIGHT (g)
0.339
PREFERRED PACKAGE CODE
54
BASE QUANTITY
5500
DELIVERY MODE
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
C
= 25 °C unless otherwise noted)
0.5
100
0.4
Instantaneous Forward
Surge
Current (A)
Average Forward Rectified Current (A)
10
0.3
1
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.2
Single
Phase Half-Wave
50 Hz Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0.1
0.1
0
20
40
60
80
100
120
140
160
180
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Ambient Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
15
10
Instantaneous Reverse Current (μA)
Peak Forward
Surge
Current (A)
T
J
= 150 °C
10 ms
Single
Half
Sine-Wave
T
J
= 125 °C
1
T
J
= 75 °C
0.1
10
5
0.01
T
J
= 25 °C
0
1
10
100
0.001
0
20
40
60
80
100
120
140
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Reverse Characteristics
Revision: 19-Apr-17
Document Number: 89112
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYX10GP
www.vishay.com
Vishay General Semiconductor
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Junction Capacitance (pF)
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-41 (DO-204AL)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Revision: 19-Apr-17
Document Number: 89112
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000
