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BZB100A,115

最大功率:830mW 精度:- 反向漏电流:230mA 稳压值(典型值):95V(Min)~105V(Max)

器件类别:分立半导体    二极管   

厂商名称:Nexperia

厂商官网:https://www.nexperia.com

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器件参数
参数名称
属性值
Brand Name
Nexperia
厂商名称
Nexperia
零件包装代码
SOD
包装说明
R-PDSO-G2
针数
2
制造商包装代码
SOD323
Reach Compliance Code
compliant
ECCN代码
EAR99
Samacsys Description
Zener Diodes Diode Zener Dual Common Anode 2-Pin
配置
COMMON ANODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
ZENER DIODE
JESD-30 代码
R-PDSO-G2
JESD-609代码
e3
湿度敏感等级
1
元件数量
2
端子数量
2
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
BIDIRECTIONAL
最大功率耗散
0.83 W
标称参考电压
100 V
表面贴装
YES
技术
ZENER
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
30
最大电压容差
5%
工作测试电流
1 mA
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Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
BZB100A
Bidirectional Zener diode
Rev. 02 — 24 June 2008
Product data sheet
1. Product profile
1.1 General description
Bidirectional Zener diode in a SOD323 (SC-76) very small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
I
I
I
I
Non-repetitive peak reverse power dissipation: P
ZSM
30 W
Bidirectional configuration
Small plastic package suitable for surface-mounted design
AEC-Q101 qualified
1.3 Applications
I
General regulation functions
I
Overvoltage protection for ElectroLuminescent (EL) driver circuits
1.4 Quick reference data
Table 1.
Symbol
Per device
V
Z
I
ZSM
[1]
Quick reference data
Parameter
working voltage
non-repetitive peak reverse
current
Conditions
I
Z
= 1 mA
[1]
Min
95
-
Typ
-
-
Max
105
0.23
Unit
V
A
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode (diode 1)
cathode (diode 2)
1
2
1
2
006aab041
Simplified outline
Graphic symbol
NXP Semiconductors
BZB100A
Bidirectional Zener diode
3. Ordering information
Table 3.
Ordering information
Package
Name
BZB100A
SC-76
Description
plastic surface-mounted package; 2 leads
Version
SOD323
Type number
4. Marking
Table 4.
BZB100A
Marking codes
Marking code
AT
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
I
ZSM
P
ZSM
P
tot
non-repetitive peak reverse
current
non-repetitive peak reverse
power dissipation
total power dissipation
T
amb
25
°C
[1]
Parameter
Conditions
Min
-
-
-
-
-
-
-
−55
−65
Max
0.23
30
75
300
540
830
150
+150
+150
Unit
A
W
W
mW
mW
mW
°C
°C
°C
[1]
[2]
[3]
[4]
[5]
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
junction temperature
ambient temperature
storage temperature
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
t
p
= 10
µs;
square wave; T
j
= 25
°C
prior to surge
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
BZB100A_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 24 June 2008
2 of 10
NXP Semiconductors
BZB100A
Bidirectional Zener diode
1.0
P
tot
(W)
0.8
(1)
006aab042
0.6
(2)
0.4
(3)
0.2
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for cathode 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
6. Thermal characteristics
Table 6.
Symbol
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
[2]
[3]
Thermal characteristics
Parameter
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
415
230
150
90
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
thermal resistance from
junction to solder point
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
BZB100A_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 24 June 2008
3 of 10
NXP Semiconductors
BZB100A
Bidirectional Zener diode
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
Per device
V
Z
r
dif
I
R
S
Z
C
d
working voltage
differential resistance
reverse current
temperature coefficient
diode capacitance
I
Z
= 1 mA
I
Z
= 1 mA
V
R
= 76 V
I
Z
= 1 mA
f = 1 MHz;
V
R
= 0 V
95
-
-
-
-
-
-
-
123
-
105
700
0.05
-
10
V
µA
mV/K
pF
Parameter
Conditions
Min
Typ
Max
Unit
10
3
P
ZSM
(W)
10
2
006aab043
150
S
Z
(mV/K)
140
006aab044
130
120
10
110
1
10
−5
10
−4
10
−3
t
p
(s)
10
−2
100
0
1
2
3
4
I
Z
(mA)
5
T
j
= 25
°C
(prior to surge)
T
j
= 25
°C
to 150
°C
Fig 2.
Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
Fig 3.
Temperature coefficient as a function of
working current; typical values
BZB100A_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 24 June 2008
4 of 10
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