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BZD27-C200

DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Transient Suppressor

器件类别:分立半导体    二极管   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
NXP(恩智浦)
包装说明
HERMETIC SEALED, GLASS PACKAGE-2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
最小击穿电压
188 V
外壳连接
ISOLATED
最大钳位电压
276 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
O-LELF-R2
最大非重复峰值反向功率耗散
300 W
元件数量
1
端子数量
2
最高工作温度
175 °C
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
0.8 W
认证状态
Not Qualified
最大反向电流
5 µA
表面贴装
YES
技术
AVALANCHE
端子形式
WRAP AROUND
端子位置
END
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D121
BZD27 series
Voltage regulator diodes
Product specification
Supersedes data of October 1991
1996 Jun 10
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Zener working voltage range:
3.6 to 270 V for 46 types
Transient suppressor stand-off
voltage range: 6.2 to 430 V
for 45 types
Supplied in 8 mm embossed tape.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
P
tot
PARAMETER
total power dissipation
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
P
tot
total power dissipation
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
P
ZSM
non-repetitive peak reverse
power dissipation
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
P
RSM
non-repetitive peak reverse
power dissipation
BZD27-C7V5 to -C510
T
stg
storage temperature
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
T
j
junction temperature
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
−65
−65
−65
−65
10/1000
µs
exponential pulse (see Fig.8);
T
j
= 25
°C
prior to surge
PCB mounted (see Fig.7)
T
amb
= 60
°C;
see Fig.2
T
amb
= 55
°C;
see Fig.3
t
p
= 100
µs;
square pulse;
T
j
= 25
°C
prior to surge; see Figs.4 and 5
CONDITIONS
T
tp
= 105
°C;
see Figs 2 and 3
MIN.
MAM249
BZD27 series
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec™
(1)
technology. This package is
handbook, 4 columns
k
a
Fig.1 Simplified outline (SOD87) and symbol.
MAX.
1.7
2.3
0.8
0.8
UNIT
W
W
W
W
300
300
W
W
150
+200
+175
+200
+175
W
°C
°C
°C
°C
1996 Jun 10
2
Philips Semiconductors
Product specification
Voltage regulator diodes
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 0.2 A; see Fig.6
MIN.
BZD27 series
MAX.
1.2
V
UNIT
Per type when used as voltage regulator diodes
T
j
= 25
°C
unless otherwise specified.
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
V
Z
(V) at I
Z
MIN.
NOM.
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
MAX.
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
DIFFERENTIAL TEMPERATURE
TEST
RESISTANCE
COEFFICIENT CURRENT
r
dif
(Ω) at I
Z
TYP.
4
4
4
3
3
2
2
1
1
1
2
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
MAX.
8
8
7
7
6
4
3
3
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
3
S
Z
(%/K) at I
Z
MIN.
−0.14
−0.14
−0.12
−0.10
−0.08
−0.04
−0.01
0.00
0.00
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
MAX.
−0.04
−0.04
−0.02
0.00
−0.02
0.04
0.06
0.07
0.07
0.08
0.08
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
I
Z
(mA)
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
REVERSE CURRENT
at REVERSE VOLTAGE
I
R
(µA)
MAX.
100
50
25
10
5
10
5
10
50
10
10
7
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
V
R
(V)
1
1
1
1
1
2
2
3
3
3
5
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
C3V6
C3V9
C4V3
C4V7
C5V1
C5V6
C6V2
C6V8
C7V5
C8V2
C9V1
C10
C11
C12
C13
C15
C16
C18
C20
C22
C24
C27
C30
C33
C36
C39
C43
C47
1996 Jun 10
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
V
Z
(V) at I
Z
MIN.
NOM.
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
240
270
MAX.
54
60
66
72
79
87
96
106
116
127
141
156
171
191
212
233
256
289
DIFFERENTIAL TEMPERATURE
TEST
RESISTANCE
COEFFICIENT CURRENT
r
dif
(Ω) at I
Z
TYP.
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
350
400
450
MAX.
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
750
850
1000
S
Z
(%/K) at I
Z
MIN.
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
I
Z
(mA)
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
2
2
2
REVERSE CURRENT
at REVERSE VOLTAGE
I
R
(µA)
MAX.
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
R
(V)
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
C51
C56
C62
C68
C75
C82
C91
C100
C110
C120
C130
C150
C160
C180
C200
C220
C240
C270
Note
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
208
228
251
1. To complete the type number the suffix is added to the basic type number, e.g. BZD27-C51.
1996 Jun 10
4
Philips Semiconductors
Product specification
Voltage regulator diodes
Per type when used as transient suppressor diodes
T
j
= 25
°C
unless otherwise specified.
REVERSE
BREAKDOWN
VOLTAGE
V
(BR)R
(V)
at I
test
MIN.
BZD27-C7V5
BZD27-C8V2
BZD27-C9V1
BZD27-C10
BZD27-C11
BZD27-C12
BZD27-C13
BZD27-C15
BZD27-C16
BZD27-C18
BZD27-C20
BZD27-C22
BZD27-C24
BZD27-C27
BZD27-C30
BZD27-C33
BZD27-C36
BZD27-C39
BZD27-C43
BZD27-C47
BZD27-C51
BZD27-C56
BZD27-C62
BZD27-C68
BZD27-C75
BZD27-C82
BZD27-C91
BZD27-C100
BZD27-C110
BZD27-C120
BZD27-C130
BZD27-C150
BZD27-C160
1996 Jun 10
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
TEMPERATURE
COEFFICIENT
TEST
CURREN
T
I
test
(mA)
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
CLAMPING
VOLTAGE
at I
RSM
(A)
note 1
13.3
12.2
11.3
10.1
9.6
8.8
7.9
7.2
6.6
5.9
5.3
4.8
4.4
3.9
3.6
3.2
3.0
2.8
2.5
2.3
2.1
1.9
1.7
1.6
1.5
1.3
1.2
1.1
1.0
0.90
0.81
0.73
0.67
BZD27 series
TYPE
NUMBER
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
I
R
(µA)
MAX.
1500
1200
100
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
at V
R
(V)
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
S
Z
(%/K) at I
test
MIN.
0.00
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.07
0.08
0.08
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
V
(CL)R
(V)
MAX.
11.3
12.3
13.3
14.8
15.7
17.0
18.9
20.9
22.9
25.6
28.4
31.0
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
126
139
152
167
185
204
224
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