BZD27C Series
0.8 W Surface Mount Glass Passivated Zener Diode
Dimensions in mm.
CASE:
M1F (DO219AA)
Voltage
11 to 240 V
Power
0.8 W
R
• Silicon planar zener diodes
• Low profile surface-mount package
• Zener and surge curren specification
• Low leakage curren
• Excellent stability
• High temperature soldering:
260 °C / 10 seconds at terminals
MECHANICAL DATA
• Case: Sub SMA Plastic
•
Terminal: Pure tin plated lead free.
•
Packaging method: refer to package code
•
Marking code: as table
•
Weight: 10 mg (approx.)
XXX = Marking code
WW = Week code
Y = Year code
Maximun Ratings and Electrical Characteristics at 25 °C
SYMBOL
TYPE NUMBER
Forward Voltage
Power Dissipation
@ IF = 0.2A
TL = 80 °C
TA = 25 °C (Note 1)
Value
Unit
V
F
Ptot
P
ZSM
1.2
2.3
0.8
300
V
W
W
Non-Repetitive Peak Pulse Power Dissipation
100 µs square pulse (Note 2)
Non-Repetitive Peak Pulse Power Dissipation
10/1000 µs waveform (BZD27-C7V5P to BZD27-C100P)
(Note 2)
Non-Repetitive Peak Pulse Power Dissipation
P
RSM
150
W
P
RSM
R.
JA
R.
JL
T
j
- T
stg
Notes:
10/1000 µs waveform (BZD27-110P to BZD27-C200P)
(Note 2)
100
180
30
-65 to + 175
W
K /W
K /W
°C
Thermal Resistance Junction to Ambient Air
(Note 1)
Thermal Resistance Junction to lead
Operating and Storage Temperature Range
µmthick)
1.Mounted on Epoxy-Glass PCB with 3 x 3 mm Cu pads (
≥40
2. T
j
= 25
°C
Prior to surge
.
Sep - 08
BZD27C Series
Electrical Characteristics
Working Voltage
Device
Device
Marking
Code
(T
A
= 25 °C unless otherwise noted)
Differential
Temperature
Reverse Current @
(Note 1)
V
Z
@
I
ZT
V
Min.
Max.
11.6
12.7
14.1
15.6
17.1
19.1
25.6
28.9
35
38
41
46
50
66
72
106
127
212
233
256
Resistance
r
dif
@
I
Z
Coefficient
ALPH
Z
@
I
Z
% / °C
Min.
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.08
0.08
0.09
0.09
0.09
0.09
0.09
Test
Current
I
ZT
Ma
50
50
50
25
25
25
25
25
25
10
10
10
10
10
10
5
5
5
2
2
Reverse Voltage
I
R
Ω
typ
4.0
4.0
5.0
5.0
6.0
6.0
7.0
7.0
8.0
21
21
24
24
25
25
60
80
200
350
400
µA
Max.
4.0
3.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
V
R
V
8.2
9.1
10
11
12
13
18
20
24
27
30
33
36
47
51
75
91
150
160
180
Max.
7
7
10
10
15
15
15
15
15
40
40
45
45
80
80
200
250
500
750
850
Max.
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
BZD27C11P
BZD27C12P
BZD27C13P
BZD27C15P
BZD27C16P
BZD27C18P
BZD27C24P
BZD27C27P
BZD27C33P
BZD27C36P
BZD27C39P
BZD27C43P
BZD27C47P
BZD27C62P
BZD27C68P
BZD27C100P
BZD27C120P
BZD27C200P
BZD27C220P
BZD27C240P
Z11
Z12
Z13
Z15
Z16
Z18
Z24
Z27
Z33
Z36
Z39
Z43
Z47
Z62
Z68
10Z
12Z
20Z
22Z
24Z
10.4
11.4
12.4
13.8
15.3
16.8
22.8
25.1
31
34
37
40
44
58
64
94
114
188
208
228
Notes: 1. Pulse test: tp
≤
5ms.
Sep - 08
BZD27C Series
Rating And Characteristic Curves
FORWARD CURRENT vs FORWARD
VOLTAGE
10
10000
TYP. DIODE CAPACITANCE vs
REVERSE VOLTAGE
C
D
, Typ. junction capacitance (pF)
I
F
, forward current (A)
1000
C12P
1
TYP. V
F
MAX. V
F
100
C27P
C200P
0.1
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
10
0.0 0.5
1.0
1.5
2.0 2.5
3.0
V
F
, forward voltage (V)
POWER DISSIPATION vs AMBIENT
TEMPERATURE
V
R
, reverse voltage (V)
MAXIMUM PULSE POWER DISSIPATION vs
ZENER VOLTAGE
P
PDM
, Max. pulse power dissipation (W)
3.0
160
140
120
100
80
60
40
20
0
0
25 50 75 100 125 150 175 200
P
D
, power dissipation (W)
2.5
2.0
1.5
1.0
0.5
0
0
SEPOINT TEMPERATURE
AMBIENT TEMPERATURE
50
75
100 125 150 175
T
amb
, ambient temperature °C
V
z
, zener voltage (V)
Sep - 08
