VISHAY
BZG04C...
Vishay Semiconductors
Silicon Zener Diodes with surge Current Specificaton
Features
•
•
•
•
•
Glass passivated junction
High reliability
Stand-off Voltage range 8.2 V to 220 V
Excellent clamping cabability
Fast response time (typ.
≤
1 ps from 0 to V
Zmin
)
15811
Applications
Protection from high voltage, high energy transients
Mechanical Data
Case:
DO214AC
Weight:
77 mg
Packaging Codes/Options:
TR / 1.5k 7 " reel
TR3 / 6k 13 " reel 6k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Test condition
R
thJA
< 25 K/W, T
amb
= 100 °C
R
thJA
< 100 K/W, T
amb
= 50 °C
Non repetitive peak surge power t
p
= 10/1000
µs
sq.pulse,
dissipation
T
j
= 25 °C prior to surge
Peak forward surge current
10 ms single half sine wave
Junction temperature
Storage temperature range
Symbol
P
Diss
P
Diss
P
ZSM
I
FSM
T
j
T
stg
Value
3
1.25
300
50
150
- 65 to + 150
Unit
W
W
W
A
°C
°C
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction lead
Junction ambient
mounted on epoxy-glass hard
tissue, Fig. 1a
mounted on epoxy-glass hard
tissue, Fig. 1b
mounted on Al-oxid-ceramic
(Al
2
O
3
), Fig. 1b
Test condition
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 0.5 A
Symbol
V
F
Min
Typ.
Max
1.2
Unit
V
Document Number 85594
Rev. 2.0, 15-Oct-03
www.vishay.com
1
BZG04C...
Vishay Semiconductors
Electrical Characteristics
Partnumber
Standoff Voltage
V
R
V
BZG04C8V2
BZG04C9V1
BZG04C10
BZG04C11
BZG04C12
BZG04C13
BZG04C15
BZG04C16
BZG04C18
BZG04C20
BZG04C22
BZG04C24
BZG04C27
BZG04C30
BZG04C33
BZG04C36
BZG04C39
BZG04C43
BZG04C47
BZG04C51
BZG04C56
BZG04C62
BZG04C68
BZG04C75
BZG04C82
BZG04C91
BZG04C100
BZG04C110
BZG04C120
BZG04C130
BZG04C150
BZG04C160
BZG04C180
BZG04C200
BZG04C220
*)
VISHAY
Breakdown Voltage
V
(BR)
@ I
R
V
min
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
208
228
251
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
2
2
2
mA
typ
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
TK
VZ
@ I
R
%/K
max
0.09
0.1
0.1
0.1
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
Clamping Voltage
V
CL(R)
@ I
PP
V
*)
max
14.8
15.7
17
18.9
20.9
22.9
25.6
28.4
31
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
126
139
152
167
185
204
224
249
276
305
336
380
20.3
19.1
17.7
15.9
14.4
13.1
11.7
10.6
9.7
8.9
7.9
7.1
6.5
6.0
5.5
4.9
4.6
4.2
3.8
3.5
3.2
2.9
2.6
2.4
2.2
2.0
1.8
1.6
1.5
1.3
1.2
1.1
1.0
0.9
0.8
@ I
ZT
A
*)
I
R
µA
max
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
10/1000
µs
pulse
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2
Document Number 85594
Rev. 2.0, 15-Oct-03
VISHAY
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
a)
b)
I
F
– Forward Current (A )
BZG04C...
Vishay Semiconductors
3.0
5.0
2.5
2.0
1.5
1.0
0.5
2.0
1.5
10.0
2.0
25.0
94 9313
1.0
25.0
94 9581
0
0
0.5
1.0
1.5
2.0
V
F
– Forward Voltage ( V )
Figure 1. Boards for R
thJA
definition (copper overlay 35µ)
Figure 4. Forward Current vs. Forward Voltage
P
ZSM
– Non-Repetitive Surge Power
Dissipation (W)
10000
1000
2.6
100
2.4
2.2
7.0
2.4
94 9314
94 9582
10
0.01
0.1
1
10
100
t
p
– Pulse Length ( ms )
Figure 2. Recommended foot pads (in mm)
Figure 5. Non Repetitive Surge Power Dissipation vs. Pulse
Length
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
40
30
20
l
10
l
0
0
5
10
15
T
L
=constant
20
25
30
l – Lead Length ( mm )
94 9570
Figure 3. Typ. Thermal Resistance vs. Lead Length
Document Number 85594
Rev. 2.0, 15-Oct-03
www.vishay.com
3
BZG04C...
Vishay Semiconductors
Z thp–Thermal Resistance for Pulse Cond.(K/W
VISHAY
1000
100
t
p
/T=0.5
10
t
p
/T=0.2
t
p
/T=0.1
t
p
/T=0.05
t
p
/T=0.02
1
10
–5
10
–4
10
–3
t
p
/T=0.01
10
–2
10
–1
10
0
10
1
10
2
94 9583
t
p
– Pulse Length ( s )
Figure 6. Thermal Response
Package Dimensions in mm
14275
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4
Document Number 85594
Rev. 2.0, 15-Oct-03
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
BZG04C...
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85594
Rev. 2.0, 15-Oct-03
www.vishay.com
5
