BZM55B Series
Zener diode
Features
1. Micro Melf package, saving space
2. Fits onto SOD 323/SOT 23 footprints
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
=25℃
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
≦300K/W
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
-65~+175
Unit
mW
mA
℃
℃
Maximum Thermal Resistance
T
j
=25℃
Parameter
Junction ambient
Test Conditions
on PC board 50mm×50mm×1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
T
j
=25℃
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
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BZM55B Series
Type
BZM55B.
2V0
2V2
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
1)
V
Znom
V
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
for V
ZT
and
V
1.96~2.04
2.15~2.25
2.35~2.45
2.64~2.76
2.94~3.06
3.24~3.36
3.52~3.68
3.82~3.98
4.22~4.38
4.6~4.8
5.0~5.2
5.48~5.72
6.08~6.32
6.66~6.94
7.35~7.65
8.04~8.36
8.92~9.28
9.8~10.2
10.78~11.22
11.76~12.24
12.74~13.26
14.7~15.3
15.7~16.3
17.64~18.36
19.6~20.4
21.55~22.45
23.5~24.5
26.4~27.6
29.4~30.6
32.4~33.6
35.3~36.7
38.2~39.8
42.1~43.9
46.1~47.9
50~52
54.9~57.1
60.8~63.2
66.6~69.4
73.5~76.5
r
zjT
Ω
100
100
<85
<85
<85
<85
<85
<85
<75
<60
<35
<25
<10
<8
<7
<7
<10
<15
<20
<20
<26
<30
<40
<50
<55
<55
<80
<80
<80
<80
<80
<90
<90
<110
<125
<135
<150
<200
<250
r
zjK
at
Ω
<600
<600
<600
<600
<600
<600
<600
<600
<600
<600
<550
<450
<200
<150
<50
<50
<50
<70
<70
<90
<110
<110
<170
<170
<220
<220
<220
<220
<220
<220
<220
<500
<600
<700
<700
<1000
<1000
<1000
<1500
I
ZK
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
I
R
and I
R
at
µA
µA
1)
<150 <300
<150 <300
<50
<100
<10
<50
<4
<40
<2
<40
<2
<40
<2
<40
<1
<20
<0.5
<10
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<2
<0.1
<5
<0.1
<5
<0.1
<5
<0.1
<10
<0.1
<10
<0.1
<10
<0.1
<10
<0.1
<10
V
R
V
1
1
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
TK
VZ
%/K
-0.09~-0.06
-0.09~-0.06
-0.09~-0.06
-0.09~-0.06
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.06~-0.03
-0.05~+0.02
-0.02~+0.02
-0.05~+0.05
0.03~0.06
0.03~0.07
0.03~0.07
0.03~0.08
0.03~0.09
0.03~0.1
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
at T
j
=150℃
Excel Semiconductor
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FaxBack +86-512-66607370
Rev. 3f, 1-Jun-2008
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BZM55B Series
Characteristics
(T
j
=25℃ unless otherwise specified)
Figure 1. Total Power Dissipation vs. Ambient
Temperature
Figure 4. Typical Change of Working Voltage Vs.
Junction Temperature
Figure 2. Typical Change of Working Voltage under
Operating Conditions at T
amb
=25℃
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
Figure 3. Diode Capacitance vs. Z-voltage
Excel Semiconductor
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Rev. 3f, 1-Jun-2008
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BZM55B Series
Figure 6. Forward Current vs. Forward Voltage
Figure 8. Z-Current vs. Z-Voltage
Figure 7. Z-Current vs. Z-Voltage
Figure 9. Differential Z-Resistance Vz vs. Z-Voltage
Figure 10. Thermal Response
Excel Semiconductor
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Rev. 3f, 1-Jun-2008
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BZM55B Series
Dimensions in mm
Cathode identification
1.35
Glass
Φ1.25±0.05
R≥2.5
Glass
1.9±0.1
Glass Case
Micro Melf
Excel Semiconductor
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FaxBack +86-512-66607370
Rev. 3f, 1-Jun-2008
5/5
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