BZM55C2V4
-BZM55C47
SURFACE MOUNT ZENER DIODE
VOLTAGE RANGE 2.4 to 47 Volts POWER RATING 500 mWatts
FEATURES
MECHANICAL DATA
* Case: MicroMELF
* Weight: approx. 12mg
.079 (2.00)
.071 (1.80)
.5
6)
.010 (0.25)
.006 (0.15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
<.043 ( 1.10)
Dimensions in inches and (millimeters)
MAXIMUM RATINGES
( @ T
A
= 25 C unless otherwise noted )
RATINGS
Power Dissipation @R
qJA
<300 K/W
Terminal resistance (Mounted on epoxy-glass hard tissue,Fig.1)
Terminal resistance (35um copper clad,0.9mm2 copper area per electrode)
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
P
V
R
qJA
R
qJL
T
J
T
STG
VALUE
500
500
300
175
-65 to +175
UNITS
mW
K/W
K/W
o
o
o
<
.0
61
(1
.049 (1.25)
.047 (1.20)
* Saving space
* Hermetic sealed parts
* Electrical data identical with the devices BZT55 Series /
TZM Series
* Fits onto SOD323/SOD110footprints
* Very sharp reverse characteristic
* Very high stability
* Low noise
* Available with tighter tolerances
* Low reverse current level
* Lead (Pb)-free component
* Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Micro-MELF
C
C
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Forward Voltage at I
F=
200mA
SYMBOL
V
F
MIN.
-
TYP.
-
MAX.
1.5
UNITS
Volts
2007-3
ELECTRICAL CHARACTERISTICS
Zener Voltage
Range
Partnumber
1)
(@TA=25 C unless otherwise specified)
O
Dynamic
Resistance
r
zjT
at
I
ZT
,
f = 1kHz
r
zjK
at
I
ZK
,
f = 1kHz
Test
Current
I
ZT
mA
Temperature
Coefficient
TK
VZ
%/K
min
max
- 0.06
- 0.06
- 0.05
- 0.05
- 0.05
- 0.05
- 0.03
0.02
0.02
0.05
0.06
0.07
0.07
0.08
0.09
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
- 0.09
- 0.09
- 0.08
- 0.08
-0.08
- 0.08
- 0.06
- 0.05
- 0.02
- 0.05
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
Test
Current Reverse Leakage Current
I
ZK
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
< 50
< 10
<4
<2
<2
<2
<1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
I
R
I
R
at T
amb
at T
amb
= 25 °C = 150 °C
µA
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
at V
R
V
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
V
Z
at I
ZT
V
min
max
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
BZM55C2V4
BZM55C2V7
BZM55C3V0
BZM55C3V3
BZM55C3V6
BZM55C3V9
BZM55C4V3
BZM55C4V7
BZM55C5V1
BZM55C5V6
BZM55C6V2
BZM55C6V8
BZM55C7V5
BZM55C8V2
BZM55C9V1 *
BZM55C10 *
BZM55C11 *
BZM55C12 *
BZM55C13 *
BZM55C15 *
BZM55C16 *
BZM55C18 *
BZM55C20 *
BZM55C22 *
BZM55C24 *
BZM55C27 *
BZM55C30 *
BZM55C33 *
BZM55C36 *
BZM55C39 *
BZM55C43 *
BZM55C47 *
1)
*)
2.28
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
< 85
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
110
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
t
p
< 10 ms, T/t
p
> 1000
Additionnal measurement of Voltage group 9V1 to 47 at 95 % V
zmin
<35 nA at T
j
25 °C
RATING AND CHARACTERISTICS CURVES ( BZM55C2V4-BZM55C47 )
Ptot, TOTAL POWER DISSIPATION (mW)
600
CD, Diode Capacitance (pF)
200
V
R
=2V
T
J
=25
O
C
500
400
300
200
100
0
150
100
50
0
100
200
O
0
0
5
10
15
20
25
T
J
=25
O
C
VZtn,REVERSE VOLTAGE CHANGE (pF)
1000
VZ, VOLTAGE CHANGE (mV)
Figure1 Total Power Dissipation vs.
Ambient Temperature
1.3
1.2
1.1
1.0
0.9
0.8
TA, AMBIENT TEMPERATURE( C)
VZ, ZENER VOLTAGE(V)
Figure2 Diode Capacitance vs. Zener Voltage
V
Ztn
=V
Zt
/V
Z
(25
O
C)
TK
VZ
=10 X 10
-4
/K
8
6
4
2
X 10
-4
/K
X 10
-4
/K
X 10
-4
/K
X 10
-4
/K
0
-2 X 10
-4
/K
-4 X 10
-4
/K
100
I
Z
=5mA
10
0
0
5
10
15
20
25
-60
0
60
120
180
240
VZ, ZENER VOLTAGE(V)
Tj, JUNCTION TEMPERATURE (
O
C)
TKVZ, TEMPERATURE COEFFICIENT OF VZ (10
-4
/K)
Figure3 Typical Change of Working Voltage under
Operating Conditions at T
A
=25
O
C
15
IF, FORWARD CURRENT (mA)
20
30
40
50
100
10
1
0.1
0.01
Figure4 Typical Change of Working Voltage vs.
Junction Temperature
10
5
I
Z
=5mA
0
-5
0
10
0.001
0
0.2
0.4
0.6
0.8
1.0
Figure5 Temperature Coefficient of
VZ
vs.
Zener Voltage
VZ, ZENER VOLTAGE(V)
VF, FORWARD VOLTAGE (V)
Figure6 Forward Current vs. Forward Voltage
RATING AND CHARACTERISTICS CURVES ( BZM55C2V4-BZM55C47 )
100
80
60
40
20
0
P
tot
=500mW
T
A
=25 C
O
50
40
30
20
10
0
P
tot
=500mW
T
A
=25
O
C
IZ, ZENER CURRENT (mA)
0
4
6
8
12
20
IZ, ZENER CURRENT (mA)
15
20
25
30
35
VZ, ZENER VOLTAGE (V)
VZ, ZENER VOLTAGE (V)
Figure7 Zener Current vs. Zener Voltage
RZ, DIFFERENTIAL ZENER RESISTANCE (W)
1000
I
Z
=1mA
Figure8 Zener Current vs. Zener Voltage
100
5mA
10
10mA
1
T
J
=25
O
C
0
5
10
15
20
25
VZ, ZENER VOLTAGE (V)
Figure9 Differential Zener Resistance vs. Zener Voltage
Zthp, Thermal Resistance for Pulse Cond (K/W)
1000
t
P
/T = 0.5
100
t
P
/T = 0.2
Single Pulse
R
qJA
= 300K/W
T=T
jmax.
- T
A
10
t
P
/T = 0.1
t
P
/T = 0.05
t
P
/T = 0.02
t
P
/T = 0.01
2
i
ZM
= (-V
Z
+(V
Z
+4r
zj
X T/Z
thp
)
1/2
) / (2r
zj
)
1
10
-1
10
0
10
1
tp, PULSE LENGTH (mS)
10
2
10
3
Figure10 Thermal Response
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specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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