DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BZT03 series
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 Jun 11
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Zener working voltage range:
7.5 to 270 V for 38 types
•
Transient suppressor stand-off
voltage range:
6.2 to 430 V for 45 types
•
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
BZT03 series
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
2/3 page
k
(Datasheet)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
P
tot
PARAMETER
total power dissipation
a
MAM204
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
T
tp
= 25
°C;
lead length 10 mm; see Fig.2
T
amb
= 45
°C;
see Fig.2;
PCB mounted (see Fig.6)
MIN.
−
−
−
MAX.
3.25
1.30
10
600
300
+175
+175
UNIT
W
W
W
W
W
°C
°C
P
ZRM
P
ZSM
P
RSM
T
stg
T
j
repetitive peak reverse power
dissipation
non-repetitive peak reverse
power dissipation
non-repetitive peak reverse
power dissipation
storage temperature
junction temperature
t
p
= 100
µs;
square pulse;
T
j
= 25
°C
prior to surge; see Fig.3
10/1000
µs
exponential pulse (see Fig.4);
T
j
= 25
°C
prior to surge
−
−
−65
−65
1996 Jun 11
2
Philips Semiconductors
Product specification
Voltage regulator diodes
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 0.5 A; see Fig.5
BZT03 series
MAX.
1.2
V
UNIT
Per type when used as voltage regulator diodes
T
j
= 25
°C
unless otherwise specified.
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
V
Z
(V) at I
Z
MIN.
NOM.
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
MAX.
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
87
96
DIFFERENTIAL TEMPERATURE
TEST
RESISTANCE
COEFFICIENT CURRENT
r
dif
(Ω) at I
Z
TYP.
1
1
2
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
25
25
25
25
30
30
60
MAX.
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
S
Z
(%/K) at I
Z
MIN.
0.00
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
MAX.
0.07
0.08
0.08
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
I
Z
(mA)
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
REVERSE CURRENT
at REVERSE VOLTAGE
I
R
(µA)
MAX.
750
600
20
10
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
R
(V)
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
C7V5
C8V2
C9V1
C10
C11
C12
C13
C15
C16
C18
C20
C22
C24
C27
C30
C33
C36
C39
C43
C47
C51
C56
C62
C68
C75
C82
C91
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
1996 Jun 11
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
V
Z
(V) at I
Z
MIN.
NOM.
100
110
120
130
150
160
180
200
220
240
270
MAX.
106
116
127
141
156
171
191
212
233
256
289
DIFFERENTIAL TEMPERATURE
TEST
RESISTANCE
COEFFICIENT CURRENT
r
dif
(Ω) at I
Z
TYP.
60
80
80
110
130
150
180
200
350
400
450
MAX.
200
250
250
300
300
350
400
500
750
850
1000
S
Z
(%/K) at I
Z
MIN.
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
I
Z
(mA)
5
5
5
5
5
5
5
5
2
2
2
REVERSE CURRENT
at REVERSE VOLTAGE
I
R
(µA)
MAX.
1
1
1
1
1
1
1
1
1
1
1
V
R
(V)
75
82
91
100
110
120
130
150
160
180
200
C100
C110
C120
C130
C150
C160
C180
C200
C220
C240
C270
Note
94
104
114
124
138
153
168
188
208
228
251
1. To complete the type number the suffix is added to the basic type number, e.g. BZT03-C100.
1996 Jun 11
4
Philips Semiconductors
Product specification
Voltage regulator diodes
Per type when used as transient suppressor diodes
T
j
= 25
°C
unless otherwise specified.
REVERSE
BREAKDOWN
VOLTAGE
V
(BR)R
(V)
at I
test
MIN.
BZT03-C7V5
BZT03-C8V2
BZT03-C9V1
BZT03-C10
BZT03-C11
BZT03-C12
BZT03-C13
BZT03-C15
BZT03-C16
BZT03-C18
BZT03-C20
BZT03-C22
BZT03-C24
BZT03-C27
BZT03-C30
BZT03-C33
BZT03-C36
BZT03-C39
BZT03-C43
BZT03-C47
BZT03-C51
BZT03-C56
BZT03-C62
BZT03-C68
BZT03-C75
BZT03-C82
BZT03-C91
BZT03-C100
BZT03-C110
BZT03-C120
BZT03-C130
BZT03-C150
BZT03-C160
1996 Jun 11
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
TEMPERATURE
COEFFICIENT
TEST
CURRENT
CLAMPING
VOLTAGE
at I
RSM
(A)
note 1
26.5
24.4
22.7
20.3
19.1
17.7
15.9
14.4
13.1
11.7
10.6
9.7
8.9
7.9
7.1
6.5
6.0
5.5
4.9
4.6
4.2
3.8
3.5
3.2
2.9
2.6
2.4
2.2
2.0
1.8
1.6
1.5
1.3
BZT03 series
TYPE
NUMBER
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
I
R
(µA)
MAX.
1500
1200
100
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
at V
R
(V)
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
S
Z
(%/K) at I
test
MIN.
0.00
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.07
0.08
0.08
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
5
I
test
(mA)
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
V
(CL)R
(V)
MAX.
11.3
12.3
13.3
14.8
15.7
17.0
18.9
20.9
22.9
25.6
28.4
31.0
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114.0
126
139
152
167
185
204
224
