BZT03C...
Silicon Z–Diodes and Transient Voltage Suppressors
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Clamping time in picoseconds
Applications
Medium power voltage regulators and medium power
transient suppression circuits
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power
dissipation
Junction temperature
Storage temperature range
Test Conditions
l=10mm,
T
L
=25
°
C
T
amb
=25
°
C
Type
Symbol
P
V
P
V
P
ZRM
t
p
=100
m
s,
T
j
=25
°
C
P
ZSM
T
j
T
stg
Value
3.25
1.3
10
600
175
–65...+175
Unit
W
W
W
W
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Junction ambient
Test Conditions
l=10mm, T
L
=constant
on PC board with spacing 25mm
Symbol
R
thJA
R
thJA
Value
46
100
Unit
K/W
K/W
Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=0.5A
Type
Symbol
V
F
Min
Typ
Max
1.2
Unit
V
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
1 (6)
BZT03C...
Characteristics when used as voltage regulator diodes, T
j
= 25°C
Type
BZT03C...
BZT03C
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
Min.
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
208
V
Z
V
Typ.
6.2
6.8
7.5
8.2
9.1
10
10
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
r
zj
W
and
Max.
2
2
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
750
Max.
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
87
96
106
116
127
141
156
171
191
212
233
Typ.
1
1
1
1
2
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
350
TK
V Z
at
%/K
Min. Max.
0
0.07
0
0.07
0
0.07
0.03
0.08
0.03
0.08
0.05
0.09
0.05
0.10
0.05
0.10
0.05
0.10
0.05
0.10
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.06
0.11
0.07
0.12
0.07
0.12
0.07
0.12
0.07
0.12
0.08
0.13
0.08
0.13
0.08
0.13
0.08
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
0.09
0.13
I
Z
mA
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
2
I
R
at V
R
m
A
Max.
1500
4.7
1000
5.1
750
5.6
600
6.2
20
6.8
10
7.5
4
8.2
3
9.1
2
10
1
11
1
12
1
13
1
15
1
16
1
18
1
20
1
22
1
24
1
27
1
30
1
33
1
36
1
39
1
43
1
47
1
51
1
56
1
62
1
68
1
75
1
82
1
91
1
100
1
110
1
120
1
130
1
150
1
160
2 (6)
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
BZT03C...
Type
BZT03C...
BZT03C
240
270
Min.
228
251
V
Z
V
Typ.
240
270
r
zj
W
and
Max.
850
1000
Max.
256
289
Typ.
400
450
TK
V Z
at I
Z
%/K
mA
Min. Max.
0.09
0.13
2
0.09
0.13
2
I
R
at V
R
m
A
Max.
1
180
1
200
Characteristics when used as transient suppressor diodes, T
j
= 25°C
Type
BZT03C...
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
Clamping
V
(CL)R 1)
at
V
Max.
9.3
10.2
11.3
12.3
13.3
14.8
15.7
17.0
18.9
20.9
22.9
25.6
28.4
31.0
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
126
139
152
167
I
RSM
A
34.0
31.0
26.5
24.4
22.7
20.3
19.1
17.7
15.9
14.4
13.1
11.7
10.6
9.7
8.9
7.9
7.1
6.5
6.0
5.5
4.9
4.6
4.2
3.8
3.5
3.2
2.9
2.6
2.4
2.2
2.0
1.8
I
R
m
A
Max.
3000
2000
1500
1200
50
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Stand-off
at
V
R 2)
V
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
3 (6)
BZT03C...
Type
BZT03C...
130
150
160
180
200
220
240
270
1)
10/1000
Clamping
V
(CL)R 1)
at
V
Max.
185
204
224
249
276
305
336
380
I
RSM
A
1.6
1.5
1.3
1.2
1.1
1.0
0.9
0.8
I
R
m
A
Max.
5
5
5
5
5
5
5
5
Stand-off
at
V
R 2)
V
110
120
130
150
160
180
200
220
exp. falling pulse t
p
= 1000
m
s down to 50%
Typical Characteristics
(T
j
= 25
_
C unless otherwise specified)
50
3
P
tot
– Total Power Dissipation ( W )
4
l=10mm
3
15mm
2
20mm
1
see Fig.1
0
7
2
94 9086a
94 9584
l
l
T
L
=constant
25
50
0
40
80
120
160
200
T
amb
– Ambient Temperature (
°C
)
Figure 1. Epoxy glass hard tissue, board thickness 1.5 mm,
R
thJA
100 K/W
x
Figure 2. Total Power Dissipation vs. Ambient Temperature
4 (6)
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
BZT03C...
3.0
I
F
– Forward Current ( A )
2.5
2.0
T
j
= 25°C
1.5
1.0
0.5
0
0
94 9585
10000
P
ZSM
– Non-Repetitive Surge Power
Dissipation ( W )
T
j
= 25°C
1000
100
0.5
1.0
1.5
2.0
94 9586
10
0.01
0.1
1
10
100
V
F
– Forward Voltage ( V )
t
p
– Pulse Length ( ms )
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse
Length
Dimensions in mm
Sintered Glass Case
SOD 57
Weight max. 0.5 g
Cathode Identification
94 9538
∅
3.6 max.
technical drawings
according to DIN
specifications
∅
0.82 max.
26 min.
4.2 max.
26 min.
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
5 (6)
嵌入式系统
