BZT52-B series
Rev. 1 — 20 December 2017
Single Zener diodes in a SOD123 package
Product data sheet
1
1 Product profile
1.1 General description
General-purpose Zener diodes in a SOD123 small Surface-Mounted Device (SMD)
plastic package.
1.2 Features and benefits
•
•
•
•
•
•
Total power dissipation: ≤ 590 mW
Wide working voltage range: nominal 2.4 V to 75 V (E24 range)
Small plastic package suitable for surface-mounted design
Low differential resistance
B selection
AEC-Q101 qualified
1.3 Applications
•
General regulation functions
1.4 Quick reference data
Table 1. Quick reference data
Symbol
V
F
P
tot
Parameter
forward voltage
total power dissipation
Conditions
I
F
= 10 mA
T
amb
≤ 25 °C
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
0.9
350
590
Unit
V
mW
mW
[1] Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Nexperia
Single Zener diodes in a SOD123 package
BZT52-B series
2
Pinning information
Description
cathode
anode
[1]
Table 2. Pinning
Pin Symbol
1
2
K
A
Simplified outline
Graphic symbol
1
2
1
2
006aaa152
[1] The marking bar indicates the cathode.
3
Ordering information
Package
Name
Description
plastic surface-mounted package; 2 leads
Version
SOD123
[1]
Table 3. Ordering information
Type number
BZT52-B2V4 to BZT52-B75
-
[1] The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.
4
Marking
Type number Marking
code
BZT52-B6V2
BZT52-B6V8
BZT52-B7V5
BZT52-B8V2
BZT52-B9V1
BZT52-B10
BZT52-B11
BZT52-B12
BZT52-B13
BZT52-B15
DH
DJ
DK
DL
DM
DN
DP
DQ
DR
DS
Type number Marking
code
BZT52-B16
BZT52-B18
BZT52-B20
BZT52-B22
BZT52-B24
BZT52-B27
BZT52-B30
BZT52-B33
BZT52-B36
BZT52-B39
DT
DU
DV
DW
DY
E1
E2
E3
E4
E5
Type number Marking
code
BZT52-B43
BZT52-B47
BZT52-B51
BZT52-B56
BZT52-B62
BZT52-B68
BZT52-B75
-
-
-
E6
E7
E8
E9
EA
EB
EC
-
-
-
Table 4. Marking Codes
Type number Marking
code
BZT52-B2V4
BZT52-B2V7
BZT52-B3V0
BZT52-B3V3
BZT52-B3V6
BZT52-B3V9
BZT52-B4V3
BZT52-B4V7
BZT52-B5V1
BZT52-B5V6
D7
D8
D9
DA
DB
DC
DD
DE
DF
DG
BZT52-B_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2017
2 / 11
Nexperia
Single Zener diodes in a SOD123 package
BZT52-B series
5
Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
Parameter
forward current
non-repetitive peak reverse current
Conditions
Min
-
-
Max
250
Unit
mA
see
Table 8
Table 9
Table 10
40
350
590
150
+150
+150
°C
°C
W
mW
mW
P
ZSM
P
tot
T
j
T
amb
T
stg
non-repetitive peak power
dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
≤ 25 °C
[1]
-
-
-
-
−55
−65
[2]
[3]
[1] t
p
= 100 μs; square wave; T
j
= 25 °C prior to surge.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
6
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to solder point
Conditions
in free air
[1]
[2]
[3]
Table 6. Thermal characteristics
Symbol
R
th(j-a)
R
th(j-sp)
Min
-
-
-
Typ
-
-
-
Max
350
210
55
Unit
K/W
K/W
K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB),single-sided copper, tin-plated and standard footprint.
2
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
[3] Soldering point of cathode tab.
7
Characteristics
Table 7. Characteristics
T
j
= 25 °C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 10 mA
[1]
Min
-
Typ
-
Max
0.9
Unit
V
[1] Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
BZT52-B_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2017
3 / 11
Nexperia
Single Zener diodes in a SOD123 package
Table 8. Characteristics per type; BZT52-B2V4 to BZT52-B24
T
j
= 25 °C unless otherwise specified.
BZT52-B series
BZT52 Sel Working
-xxx
voltage
V
Z
(V);
I
Z
= 5 mA
Min
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
Max
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
Maximum
differential
resistance
r
dif
(Ω)
I
Z
= 1 mA I
Z
= 5 mA
Max
400
500
500
500
500
500
500
500
480
400
150
80
80
80
100
Max
85
83
95
95
95
95
95
78
60
40
10
8
10
10
10
10
10
10
10
15
20
20
20
25
30
Reverse
current
I
R
(μA)
Temperature Diode
Non-
coefficient
capacitance repetitive
[1]
peak reverse
S
Z
(mV/K);
C
d
(pF)
current
[2]
I
ZSM
(A)
I
Z
= 5 mA
Max
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Max
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
Max
6.00
6.00
6.00
6.00
6.00
6.00
6.00
6.00
6.00
6.00
6.00
6.00
4.00
4.00
3.00
3.00
2.50
2.50
2.50
2.00
1.50
1.50
1.50
1.25
1.25
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
Max
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
V
R
(V) Min
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14
15.4
16.8
10.20 70
10.80 11.20 70
11.80 12.20 90
12.70 13.30 110
14.70 15.30 110
15.70 16.30 170
17.60 18.40 170
19.60 20.40 220
21.60 22.40 220
23.50 24.50 220
[1] f = 1 MHz; V
R
= 0 V
[2] t
p
= 100 μs; T
amb
= 25 °C
BZT52-B_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2017
4 / 11
Nexperia
Single Zener diodes in a SOD123 package
Table 9. Characteristics per type; BZT52-B27 to BZT52-B51
T
j
= 25 °C unless otherwise specified.
BZT52-B series
BZT52 Sel Working
-xxx
voltage
V
Z
(V);
I
Z
= 2 mA
Min
27
30
33
36
39
43
47
51
B
B
B
B
B
B
B
B
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50.0
Max
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52.0
Maximum
differential
resistance
r
dif
(Ω)
I
Z
= 1 mA I
Z
= 5 mA
Max
250
250
250
250
300
325
325
350
Max
40
40
40
60
75
80
90
100
Reverse
current
I
R
(μA)
Temperature Diode
Non-
coefficient
capacitance repetitive
[1]
C
d
(pF)
peak reverse
S
Z
(mV/K);
current
[2]
I
ZSM
(A)
I
Z
= 5 mA
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
Max
50
50
45
45
45
40
40
40
Max
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
Max
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
R
(V) Min
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
[1] f = 1 MHz; V
R
= 0 V
[2] t
p
= 100 μs; T
amb
= 25 °C
Table 10. Characteristics per type; BZT52-B56 to BZT52-B75
T
j
= 25 °C unless otherwise specified.
BZT52 Sel Working
-xxx
voltage
V
Z
(V);
I
Z
= 2 mA
Min
56
62
68
75
B
B
B
B
54.9
60.8
66.6
73.5
Max
57.1
63.2
69.4
76.5
Maximum
differential
resistance
r
dif
(Ω)
I
Z
= 0.5
mA
Max
375
400
400
400
I
Z
= 2 mA
Max
120
140
160
175
Reverse
current
I
R
(μA)
Temperature Diode
Non-
coefficient
capacitance repetitive
[1]
C
d
(pF)
peak reverse
S
Z
(mV/K);
current
[2]
I
ZSM
(A)
I
Z
= 5 mA
Max
63.8
71.6
79.8
88.6
Max
40
35
35
35
Max
0.30
0.30
0.25
0.20
Max
0.05
0.05
0.05
0.05
V
R
(V) Min
39.2
43.4
47.6
52.5
52.2
58.8
65.6
73.4
[1] f = 1 MHz; V
R
= 0 V
[2] t
p
= 100 μs; T
amb
= 25 °C
BZT52-B_SER
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2017
5 / 11
