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BZT52-B15-D4

Zener Diode, 15V V(Z), 2%, 0.41W, Silicon, Unidirectional, PLASTIC, SO-2

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
不符合
厂商名称
Vishay(威世)
包装说明
R-PDSO-G2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
30 Ω
JESD-30 代码
R-PDSO-G2
JESD-609代码
e0
元件数量
1
端子数量
2
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性
UNIDIRECTIONAL
最大功率耗散
0.41 W
认证状态
Not Qualified
标称参考电压
15 V
表面贴装
YES
技术
ZENER
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子位置
DUAL
最大电压容差
2%
工作测试电流
5 mA
Base Number Matches
1
文档预览
BZT52 Series
Vishay Semiconductors
formerly General Semiconductor
Zener Diodes
SOD-123
.022 (0.55)
VZ Range
2.4 to 75
Power Dissipation
410mW
Cathode Band
.152 (3.85)
.140 (3.55)
.112 (2.85)
.100 (2.55)
Mounting Pad Layout
0.094 (2.40)
0.055 (1.40)
0.055 (1.40)
.006 (0.15)
max.
Top View
Dimensions in inches
and (millimeters)
.004 (0.1)
max.
.067 (1.70)
.055 (1.40)
.053 (1.35)
max.
Features
• Silicon Planar Power Zener Diodes
• The Zener voltages are graded according to the
international E 24 standard. Standard Zener volt-
age tolerance is ±5%. Replace suffix “C” with “B”
for ±2% tolerance. Other tolerances and other
Zener voltages are available upon request.
• These diodes are also available in other case
styles and other configurations including: the
SOT-23 case with type designation BZX84 series,
the dual zener diode common anode configuration
in the SOT-23 case with type
designation AZ23 series and the dual zener diode
common cathode configuration in the SOT-23 case
with type designation DZ23 series.
.010 (0.25)
min.
Mechanical Data
Case:
SOD-123 Plastic Case
Weight:
approx. 0.01g
Packaging Codes/Options:
D3 / 10K per 13” reel (8mm tape)
D4 / 3K per 7” reel (8mm tape)
Maximum Ratings and Thermal Characteristics
(T
Parameter
Zener Current (see Table “Characteristics”)
Power Dissipation at Tamb = 25°C
Thermal Resistance
Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Notes:
(1) Diode on Ceramic Substrate 0.7mm; 2.5mm
2
area
(2) Valid provided that electrodes are kept at ambient temperature
A
= 25°C unless otherwise noted)
Symbol
Value
410
(1)
300
(2)
150
–65 to +150
Unit
P
tot
R
ΘJA
T
j
T
S
mW
°C/W
°C
°C
Document Number 88314
26-Apr-02
www.vishay.com
1
BZT52 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
y = C for ± 5%
y = B for ± 2%
Type
BZT52-y2V4
BZT52-y2V7
BZT52-y3
BZT52-y3V3
BZT52-y3V6
BZT52-y3V9
BZT52-y4V3
BZT52-y4V7
BZT52-y5V1
BZT52-y5V6
BZT52-y6V2
BZT52-y6V8
BZT52-y7V5
BZT52-y8V2
BZT52-y9V1
BZT52-y10
BZT52-y11
BZT52-y12
BZT52-y13
BZT52-y15
BZT52-y16
BZT52-y18
BZT52-y20
BZT52-y22
BZT52-y24
BZT52-y27
BZT52-y30
BZT52-y33
BZT52-y36
BZT52-y39
BZT52-y43
BZT52-y47
BZT52-y51
BZT52-y56
BZT52-y62
BZT52-y68
BZT52-y75
Marking
Code
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
X2
X3
X4
X5
A
= 25°C unless otherwise noted)
Dynamic Resistance
at I
Z
= 5mA
at I
Z
= 1mA
f = 1 kHz
f = 1kHz
r
Zj
(Ω)
r
Zj
(Ω)
85
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
< 135
(2)
< 150
(2)
< 200
(2)
< 250
(2)
600
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
< 1000
(3)
< 1000
(3)
< 1000
(3)
< 1500
(3)
Admissible Zener current
(4)
Temp. Coeff.
Reverse
of Zener Voltage
Voltage
at
at
at I
Z
= 5mA
at I
R
= 100nA T
amb
= 45°C
T
amb
= 25°C
α
VZ
(10
–4
/°C)
V
R
(V)
I
Z
(mA)
I
Z
(mA)
–9…–4
–9…–4
–9…–3
–8…–3
–8…–3
–7…–3
–6…–1
– 5 … +2
– 3 … +4
– 2 … +6
– 1 … +7
+2 … +7
+3 … +7
+4 … +7
+5 … +8
+5 … +8
+5 … +9
+6 … +9
+7 … +9
+7 … +9
+8 … +9.5
+8 … +9.5
+8 … +10
+8 … +10
+8 … +10
+8 … +10
+8 … +10
+8 … +10
+8 … +10
+10 … +12
+10 … +12
+10 … +12
+10 … +12
typ. +10
(2)
typ. +10
(2)
typ. +10
(2)
typ. +10
(2)
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
113
98
92
85
77
71
64
56
50
45
41
37
34
30
28
25
23
21
19
17
15
14
13
11
10
9
8
8
7
6
5
5
134
118
109W5
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
9
8
7
6
6
Notes:
(1) Tested with pulses t
p
= 5 ms
(2) at I
Z
= 2.5 mA
(3) at I
Z
= 0.5 mA
(4) Valid provided that electrodes are kept at ambient temperature
www.vishay.com
2
Document Number 88314
26-Apr-02
BZT52 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Type
± 5% Tol.
BZT52-C2V4
BZT52-C2V7
BZT52-C3
BZT52-C3V3
BZT52-C3V6
BZT52-C3V9
BZT52-C4V3
BZT52-C4V7
BZT52-C5V1
BZT52-C5V6
BZT52-C6V2
BZT52-C6V8
BZT52-C7V5
BZT52-C8V2
BZT52-C9V1
BZT52-C10
BZT52-C11
BZT52-C12
BZT52-C13
BZT52-C15
BZT52-C16
BZT52-C18
BZT52-C20
BZT52-C22
BZT52-C24
BZT52-C27
BZT52-C30
BZT52-C33
BZT52-C36
BZT52-C39
BZT52-C43
BZT52-C47
BZT52-C51
BZT52-C56
BZT52-C62
BZT52-C68
BZT52-C75
Zener Voltage
range
(1)
at I
ZT1
V
Z
(V)
min.
max.
2.20
2.50
2.80
3.10
3.40
3.70
4.00
4.40
4.80
5.20
5.80
6.40
7.00
7.70
8.50
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
2.60
2.90
3.20
3.50
3.80
4.10
4.60
5.00
5.40
6.00
6.60
7.20
7.90
8.70
9.60
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
(T
A
= 25°C unless otherwise noted)
Test Current
I
ZT1
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
Type
± 2% Tol.
BZT52-B2V4
BZT52-B2V7
BZT52-B3
BZT52-B3V3
BZT52-B3V6
BZT52-B3V9
BZT52-B4V3
BZT52-B4V7
BZT52-B5V1
BZT52-B5V6
BZT52-B6V2
BZT52-B6V8
BZT52-B7V5
BZT52-B8V2
BZT52-B9V1
BZT52-B10
BZT52-B11
BZT52-B12
BZT52-B13
BZT52-B15
BZT52-B16
BZT52-B18
BZT52-B20
BZT52-B22
BZT52-B24
BZT52-B27
BZT52-B30
BZT52-B33
BZT52-B36
BZT52-B39
BZT52-B43
BZT52-B47
BZT52-B51
BZT52-B56
BZT52-B62
BZT52-B68
BZT52-B75
Zener Voltage
range
(1)
at I
ZT1
V
Z
(V)
min.
max.
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50.0
54.9
60.8
66.6
73.5
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52.0
57.1
63.2
69.4
76.5
Test Current
I
ZT1
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
Notes:
(1) Measured with pulses t
p
= 5 ms
Document Number 88314
26-Apr-02
www.vishay.com
3
BZT52 Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
BZT52...
BZT52...
www.vishay.com
4
Document Number 88314
26-Apr-02
BZT52 Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
BZT52...
BZT52...
BZT52...
Document Number 88314
26-Apr-02
www.vishay.com
5
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