BZT52-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon Planar Power Zener Diodes
• These diodes are also available in other case
styles and other configurations including: the
SOT-23 case with type designation BZX84 series,
the dual zener diode common anode configuration
in the SOT-23 case with type designation AZ23
series and the dual zener diode common cathode
configuration in the SOT-23 case with type desig-
nation DZ23 series.
• The Zener voltages are graded according to the
international E 24 standard.
17431
Mechanical Data
Case:
SOD-123 Plastic case
Weight:
approx. 9.3 mg
Packaging Codes/Options:
GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box
GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Zener current see table "
Characteristics "
Power dissipation
Power dissipation
1)
2)
Test condition
Symbol
Value
Unit
P
tot
P
tot
500
2)
410
1)
mW
mW
Diode on ceramic substrate 0.7 mm; 2.5 mm
2
pad areas
Diode on ceramic substrate 0.7 mm; 5 mm
2
pad areas
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
J
T
S
Value
300
1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Valid provided that electrodes are kept at ambient temperature
Document Number 85760
Rev. 1.5, 13-Sep-04
www.vishay.com
1
BZT52-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Marking
Code
Zener Voltage
Range
1)
Dynamic Resistance
r
zj
@ I
ZT1
r
zj
@ I
ZT2
Test
Current
I
ZT1
Temp.
Coefficient
@ I
ZT1
Reverse
Voltage
V
R
@ I
R
=
100 nA,
V
Admissible Zener
Current
4)
I
Z
@
T
amb
=
45 °C,
mA
I
Z
@
T
amb
=
25 °C,
V
Z
@ I
ZT1
V
min
BZT52C2V4
BZT52C2V7
BZT52C3
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
BZT52C39
BZT52C43
BZT52C47
BZT52C51
BZT52C56
BZT52C62
BZT52C68
BZT52C75
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
X2
X3
X4
X5
2.2
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
max
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
85
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
< 135
(2)
< 150
(2)
< 200
(2)
< 250
(2)
Ω
mA
α
VZ
(10
-4
/°C)
600
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
< 1000
(3)
< 1000
(3)
< 1000
(3)
< 1500
(3)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
- 9 to - 4
- 9 to - 4
- 9 to - 3
- 8 to - 3
- 8 to - 3
- 7 to - 3
- 6 to - 1
- 5 to +2
- 3 to +4
- 2 to +6
- 1 to +7
+2 to +7
+3 to +7
+4 to +7
+5 to +8
+5 to +8
+5 to +9
+6 to +9
+7 to +9
+7 to +9
+8 to +9.5
+8 to +9.5
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+10 to +12
+10 to +12
+10 to +12
+10 to +12
typ. +10
(2)
typ. +10
(2)
typ. +10
(2)
typ. +10
(2)
-
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
-
-
-
-
113
98
92
85
77
71
64
56
50
45
41
37
34
30
28
25
23
21
19
17
15
14
13
11
10
9
8
8
7
6
5
5
-
-
-
-
-
134
118
109
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
9
8
7
6
6
-
-
-
-
I
ZT1
= 5 mA, I
ZT2
= 1 mA
(1)
(2)
(3)
(4)
Measured with pulses T
p
= 5 ms
= I
ZT1
= 2.5 mA
= I
ZT2
= 0.5 mA
Valid provided that electrodes are kept at ambient temperature.
www.vishay.com
2
Document Number 85760
Rev. 1.5, 13-Sep-04
BZT52-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Marking
Code
Zener Voltage
Range
1)
Dynamic Resistance
r
zj
@ I
ZT1
r
zj
@ I
ZT2
Test
Current
I
ZT1
Temp.
Coefficient
@ I
ZT1
Reverse
Voltage
V
R
@ I
R
=
100 nA,
V
Admissible Zener
Current
4)
I
Z
@
T
amb
=
45 °C,
mA
I
Z
@
T
amb
=
25 °C,
V
Z
@ I
ZT1
V
min
BZT52B2V4
BZT52B2V7
BZT52B3
BZT52B3V3
BZT52B3V6
BZT52B3V9
BZT52B4V3
BZT52B4V7
BZT52B5V1
BZT52B5V6
BZT52B6V2
BZT52B6V8
BZT52B7V5
BZT52B8V2
BZT52B9V1
BZT52B10
BZT52B11
BZT52B12
BZT52B13
BZT52B15
BZT52B16
BZT52B18
BZT52B20
BZT52B22
BZT52B24
BZT52B27
BZT52B30
BZT52B33
BZT52B36
BZT52B39
BZT52B43
BZT52B47
BZT52B51
BZT52B56
BZT52B62
BZT52B68
BZT52B75
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
X2
X3
X4
X5
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
54.9
60.8
66.6
73.5
max
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
57.1
63.2
69.4
76.5
85
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
< 135
(2)
< 150
(2)
< 200
(2)
< 250
(2)
Ω
mA
α
VZ
(10
-4
/°C)
600
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
< 1000
(3)
< 1000
(3)
< 1000
(3)
< 1500
(3)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
- 9 to - 4
- 9 to - 4
- 9 to - 3
- 8 to - 3
- 8 to - 3
- 7 to - 3
- 6 to - 1
- 5 to + 2
- 3 to + 4
- 2 to + 6
- 1 to + 7
+ 2 to + 7
+ 3 to + 7
+ 4 to + 7
+ 5 to + 8
+ 5 to + 8
+ 5 to + 9
+ 6 to + 9
+ 7 to + 9
+ 7 to + 9
+ 8 to + 9.5
+ 8 to + 9.5
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 8 to + 10
+ 10 to + 12
+ 10 to + 12
+ 10 to + 12
+ 10 to + 12
typ. + 10
(2)
typ. + 10
(2)
typ. + 10
(2)
typ. + 10
(2)
-
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
-
-
-
-
113
98
92
85
77
71
64
56
50
45
41
37
34
30
28
25
23
21
19
17
15
14
13
11
10
9
8
8
7
6
5
5
-
-
-
-
-
134
118
109W5
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
9
8
7
6
6
-
-
-
-
I
ZT1
= 5 mA, I
ZT2
= 1 mA
1)
2)
3)
4)
Measured with pulses T
p
= 5 ms
= I
ZT1
= 2.5 mA
= I
ZT2
= 0.5 mA
Valid provided that electrodes are kept at ambient temperature.
Document Number 85760
Rev. 1.5, 13-Sep-04
www.vishay.com
3
BZT52-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
18114
18117
Figure 1. Forward characteristics
Figure 4. Dynamic Resistance vs. Zener Current
18888
18118
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Capacitance vs. Zener Voltage
°
C
18116
18119
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. Dynamic Resistance vs. Zener Current
www.vishay.com
4
Document Number 85760
Rev. 1.5, 13-Sep-04
BZT52-Series
Vishay Semiconductors
°C
18120
18135
, =
Figure 7. Dynamic Resistance vs. Zener Current
Figure 10. Temperature Dependence of Zener Voltage vs. Zener
Voltage
°C/W
18121
18124
Figure 8. Thermal Differential Resistance vs. Zener Voltage
Figure 11. Change of Zener Voltage vs. Junction Temperature
°C
18122
18136
Figure 9. Dynamic Resistance vs. Zener Voltage
Figure 12. Temperature Dependence of Zener Voltage vs. Zener
Voltage
Document Number 85760
Rev. 1.5, 13-Sep-04
www.vishay.com
5
嵌入式系统
