BZT52-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar Zener diodes
• The Zener voltages are graded according to
the international E24 standard
• AEC-Q101 qualified available
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
Available
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
2.5; 5
Pulse current
Single
UNIT
V
mA
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
BZT52C2V4-E3-08 to BZT52C75-E3-08
BZT52B2V4-E3-08 to BZT52B75-E3-08
BZT52C2V4-HE3-08 to BZT52C75-HE3-08
BZT52-series
BZT52B2V4-HE3-08 to BZT52B75-HE3-08
BZT52C2V4-E3-18 to BZT52C75-E3-18
BZT52B2V4-E3-18 to BZT52B75-E3-18
BZT52C2V4-HE3-18 to BZT52C75-HE3-18
BZT52B2V4-HE3-18 to BZT52B75-HE3-18
10 000 (8 mm tape on 13" reel)
10 000/box
3000 (8 mm tape on 7" reel)
15 000/box
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
PACKAGE
PACKAGE NAME
SOD-123
WEIGHT
10.3 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Diode on ceramic substrate 0.7 mm; 5 mm
2
pad areas
Diode on ceramic substrate 0.7 mm; 2.5 mm
2
pad areas
See table “Electrical Characteristics “
Valid provided that electrodes are kept at
ambient temperature
R
thJA
T
j
T
stg
T
op
300
150
-65 to +150
-55 to +150
K/W
°C
°C
°C
SYMBOL
P
tot
P
tot
VALUE
500
410
UNIT
mW
mW
Power dissipation
Zener current
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
Rev. 1.9, 08-Nov-16
Document Number: 85760
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZT52-Series
www.vishay.com
Vishay Semiconductors
TEST
CURRENT
I
ZT1
I
ZT2
REVERSE
VOLTAGE
V
R
at I
R
V
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
-
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 25
> 27
> 29
> 32
> 35
> 38
-
-
-
-
nA
-
-
-
-
-
-
-
-
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
85
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
DYNAMIC
RESISTANCE
Z
Z
at
I
ZT1
600
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
< 1000
(3)
< 1000
(3)
<
1000
(3)
< 1500
(3)
Z
ZK
at
I
ZT2
TEMP.
COEFFICIENT
VZ
10
-4
/°C
-9 to -4
-9 to -4
-9 to -3
-8 to -3
-8 to -3
-7 to -3
-6 to -1
-5 to +2
-3 to +4
-2 to +6
-1 to +7
+2 to +7
+3 to +7
+4 to +7
+5 to +8
+5 to +8
+5 to +9
+6 to +9
+7 to +9
+7 to +9
+8 to +9.5
+8 to +9.5
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+10 to +12
+10 to +12
+10 to +12
+10 to +12
typ. +10
(2)
typ. +10
(2)
typ.
+10
(2)
typ. +10
(2)
-
113
98
92
85
77
71
64
56
50
45
41
37
34
30
28
25
23
21
19
17
15
14
13
11
10
9
8
8
7
6
5
5
-
-
-
-
ADMISSABLE ZENER
CURRENT
(4)
I
Z
at
I
Z
at
T
amb
= 45 °C T
amb
= 25 °C
mA
-
134
118
109
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
9
8
7
6
6
-
-
-
-
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART
NUMBER
MARKING
CODE
V
Z
at I
ZT1
V
MIN. NOM. MAX.
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
BZT52C39
BZT52C43
BZT52C47
BZT52C51
BZT52C56
BZT52C62
BZT52C68
BZT52C75
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
X2
X3
X4
X5
2.2
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
mA
> 22.5 100
100 60 (< 100)
100 70 (< 100)
100 70 (< 100)
-
-
-
-
< 135
(2)
< 150
(2)
< 200
(2)
< 250
(2)
Notes
• I
ZT1
= 5 mA, I
ZT2
= 1 mA
(1)
Measured with pulses t = 5 ms
p
(2)
I
ZT1
= 2.5 mA
(3)
I
ZT2
= 0.5 mA
(4)
Valid provided that electrodes are kept at ambient temperature
Rev. 1.9, 08-Nov-16
Document Number: 85760
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZT52-Series
www.vishay.com
Vishay Semiconductors
TEST
CURRENT
I
ZT1
I
ZT2
REVERSE
VOLTAGE
V
R
at I
R
V
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
-
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
-
-
-
nA
-
-
-
-
-
-
-
-
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
-
-
-
-
85
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
<
135
(2)
<
< 150
(2)
< 200
(2)
<
250
(2)
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
600
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
1000
(3)
< 1000
(3)
< 1000
(3)
<
1500
(3)
Z
ZK
at
I
ZT2
TEMP.
ADMISSABLE ZENER
COEFFICIENT
CURRENT
(4)
VZ
10
-4
/°C
-9 to -4
-9 to -4
-9 to -3
-8 to -3
-8 to -3
-7 to -3
-6 to -1
-5 to +2
-3 to +4
-2 to +6
-1 to +7
+2 to +7
+3 to +7
+4 to +7
+5 to +8
+5 to +8
+5 to +9
+6 to +9
+7 to +9
+7 to +9
+8 to +9.5
+8 to +9.5
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+10 to +12
+10 to +12
+10 to +12
+10 to +12
typ.
+10
(2)
typ. +10
(2)
typ. +10
(2)
typ.
+10
(2)
-
113
98
92
85
77
71
64
56
50
45
41
37
34
30
28
25
23
21
19
17
15
14
13
11
10
9
8
8
7
6
5
5
-
-
-
-
I
Z
at
I
Z
at
T
amb
= 45 °C T
amb
= 25 °C
mA
-
134
118
109
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
9
8
7
6
6
-
-
-
-
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART
NUMBER
MARKING
CODE
V
Z
at I
ZT1
V
MIN. NOM. MAX.
BZT52B2V4
BZT52B2V7
BZT52B3V0
BZT52B3V3
BZT52B3V6
BZT52B3V9
BZT52B4V3
BZT52B4V7
BZT52B5V1
BZT52B5V6
BZT52B6V2
BZT52B6V8
BZT52B7V5
BZT52B8V2
BZT52B9V1
BZT52B10
BZT52B11
BZT52B12
BZT52B13
BZT52B15
BZT52B16
BZT52B18
BZT52B20
BZT52B22
BZT52B24
BZT52B27
BZT52B30
BZT52B33
BZT52B36
BZT52B39
BZT52B43
BZT52B47
BZT52B51
BZT52B56
BZT52B62
BZT52B68
BZT52B75
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
X2
X3
X4
X5
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
54.9
60.8
66.6
73.5
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
57.1
63.2
69.4
76.5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
mA
Notes
• I
ZT1
= 5 mA, I
ZT2
= 1 mA
(1)
Measured with pulses t = 5 ms
p
(2)
I
ZT1
= 2.5 mA
(3)
I
ZT2
= 0.5 mA
(4)
Valid provided that electrodes are kept at ambient temperature
Rev. 1.9, 08-Nov-16
Document Number: 85760
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZT52-Series
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
mA
10
3
10
2
Vishay Semiconductors
Ω
100
T
J
= 25 °C
5
4
I
F
10
1
10
-1
10
-2
10
-3
10
-4
10
-5
0
18114
T
J
= 100 °C
r
zj
3
2
33
27
22
18
15
12
10
6.8/8.2
6.2
10
T
J
= 25 °C
5
4
3
2
1
0.2
0.4
0.6
0.8
1V
0.1
18119
2
5
1
2
5
V
F
10
I
Z
2
5
100 mA
Fig. 1 -
Forward characteristics
Fig. 4 -
Dynamic Resistance
vs.
Zener Current
mW
500
Ω
10
3
7
T
j
= 25 °C
400
5
4
P
tot
300
R
zj
3
2
47 + 51
43
39
36
10
2
200
7
5
4
3
100
2
0
0
18888
100
200 °C
10
0.1
18120
2
3
4 5
1
2
3 4 5
T
amb
I
Z
10
mA
Fig. 2 -
Admissible Power Dissipation
vs.
Ambient Temperature
Fig. 5 -
Dynamic Resistance
vs.
Zener Current
Ω
1000
5
4
3
2
Ω
10
3
T
J
= 25 °C
5
4
3
2
R
zth
= R
thA
x
V
Z
x
Δ
V
Z
Δ
T
j
r
zj
R
zth
100
5
4
3
2
10
2
5
4
3
2
10
5
4
3
2
2.7
3.6
4.7
5.1
5.6
10
5
4
3
2
negative
positive
1
0.1
18117
2
5
1
1
18121
2
3
4 5
1
2
5
10
I
Z
2
5
100 mA
10
2
3 4 5
100
V
V
Z
at I
Z
= 5 mA
Fig. 3 -
Dynamic Resistance
vs.
Zener Current
Fig. 6 -
Thermal Differential Resistance
vs.
Zener Voltage
Rev. 1.9, 08-Nov-16
Document Number: 85760
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZT52-Series
www.vishay.com
Vishay Semiconductors
mV/°C
100
I
Z
= 5 mA
Ω
100
7
5
4
R
zj
3
2
Δ
V
Z
Δ
T
j
80
60
10
7
5
4
3
2
40
20
T
j
= 25 °C
I
Z
= 5 mA
1
2
3
4 5
1
10
2
0
0
18136
3 4 5
100
V
20
40
60
80
100
V
18122
V
Z
V
Z
at I
Z
= 2 mA
Fig. 7 -
Dynamic Resistance
vs.
Zener Voltage
Fig. 10 -
Temperature Dependence of Zener Voltage
vs.
Zener Voltage
mV/°C
25
V
9
8
5 mA
1 mA
20 mA
Δ
V
Z
Δ
T
j
20
15
10
5
0
-5
1
18135
2
3
4 5
I
Z
=
7
ΔV
Z
6
5
4
3
2
1
0
-1
0
20
40
60
V
Z
at I
Z
= 5 mA
51
43
36
I
Z
= 5 mA
80
100
T
j
120
140 °C
10
2
3 4 5
100
V
18158
V
Z
at I
Z
= 5 mA
V
≥
27
V,
I = 2 mA
Fig. 8 -
Temperature Dependence of Zener Voltage
vs.
Zener Voltage
Fig. 11 -
Change of Zener Voltage
vs.
Junction Temperature
V
0.8
0.7
0.6
V
Z
at I
Z
= 5 mA
25
15
10
V
1.6
1.4
1.2
ΔV
Z
1.0
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
1
18159
ΔV
Z
= r
Zth
x I
Z
I
Z
= 5 mA
V
Z
>= 56 V; I
Z
= 2.5 mA
Δ
V
Z
0.5
0.4
0.3
0.2
0.1
0
-1
- 0.2
0
18124
3.6
4.7
8
7
6.2
5.9
5.6
5.1
10
20
40
60
80
100 120 140 C
V
Z
at I
Z
= 5 mA
100 V
T
j
Fig. 9 -
Change of Zener Voltage
vs.
Junction Temperature
Fig. 12 -
Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium
vs.
Zener Voltage
Rev. 1.9, 08-Nov-16
Document Number: 85760
5
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