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BZT52C24S RRG

Zener Diodes Zener diode 24v, 200mW 5%

器件类别:半导体    分立半导体   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
Taiwan Semiconductor
产品种类
Product Category
Zener Diodes
RoHS
Details
系列
Packaging
Reel
产品
Product
Rectifiers
工厂包装数量
Factory Pack Quantity
3000
文档预览
BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
200mW, 5% Tolerance SMD Zener Diodes
FEATURES
Wide zener voltage range selection: 2.4V to 75V
VZ tolerance selection of ± 5%
Surface device type mountin
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
tot
V
F
at I
F
=10mA
T
J
Max.
Package
Configuration
VALUE
2.4-75
5
200
1
150
UNIT
V
mA
mW
V
°C
APPLICATIONS
● Low voltage stabilzers or voltage references
● Adapters
● On-board DC/DC converter
SOD-323F
Single dice
MECHANICAL DATA
Case: SOD-323F
Molding compound meets UL 94 V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 4.02 ± 0.5mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=10mA
Total power dissipation
Junction temperature range
Storage temperature range
SYMBOL
V
F
P
tot
T
J
T
STG
VALUE
1
200
-65 to +150
-65 to +150
UNIT
V
mW
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
625
UNIT
°C/W
1
Version:H1709
BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
ZENER VOLTAGE
PART
NUMBER
MARKING
CODE
Min.
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
BZT52C4V7S
BZT52C5V1S
BZT52C5V6S
BZT52C6V2S
BZT52C6V8S
BZT52C7V5S
BZT52C8V2S
BZT52C9V1S
BZT52C10S
BZT52C11S
BZT52C12S
BZT52C13S
BZT52C15S
BZT52C16S
BZT52C18S
BZT52C20S
BZT52C22S
BZT52C24S
BZT52C27S
BZT52C30S
BZT52C33S
BZT52C36S
BZT52C39S
BZT52C43S
BZT52C47S
BZT52C51S
BZT52C56S
BZT52C62S
BZT52C68S
BZT52C75S
Z0
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
ZA
ZB
ZC
ZD
ZE
ZF
ZG
ZH
ZJ
ZK
ZL
ZM
ZN
ZP
ZR
ZS
ZT
ZU
ZV
ZW
ZX
ZY
Z-
Z=
Z≡
Z>
Z<
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.11
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
58.90
64.60
71.25
V
Z
@ I
ZT
V
Nom.
2.40
2.70
3.00
3.30
3.60
3.90
4.30
4.70
5.10
5.60
6.20
6.80
7.50
8.20
9.10
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
Max.
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.86
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
65.10
71.40
78.75
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
TEST
CURRENT
I
ZT
mA
REGULAR
IMPEDANCE
Z
ZT
@ I
ZT
Max.
100
100
100
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
200
215
240
255
Z
ZK
@ I
ZK
Max.
564
564
564
564
564
564
564
470
451
376
141
75
75
75
94
141
141
141
160
188
188
212
212
235
235
282
282
306
329
329
353
353
376
400
423
447
470
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
TEST
CURRENT
I
ZK
mA
LEAKAGE
CURRENT
I
R
@ V
R
µA
Max.
45
18
9
4.5
4.5
2.7
2.7
2.7
1.8
0.9
2.7
1.8
0.9
0.63
0.45
0.18
0.09
0.09
0.09
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
1
1
1
1
1
1
1
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.0
25.2
27.3
30.1
33.0
35.7
39.2
43.4
47.6
52.5
V
2
Version:H1709
BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
Notes:
1. The Zener Voltage (V
Z
) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the normal zener voltage of ±5%.
3. For detailed information on price, availability and delivery of normal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having an RMS value equal to 10% of the dc zener current(I
ZT
or I
ZK
) is superimposed to I
ZT
or I
ZK
.
ORDERING INFORMATION
PART NO.
BZT52CXXXS
(Note 1)
PACKING
CODE
RR
G
R9
SOD-323F
10K / 13" Reel
PACKING CODE
SUFFIX(*)
PACKAGE
PACKING
3K / 7" Reel
Notes:
1. "xxx" defines voltage from 2.4V (BZT52C2V4S) to 75V (BZT52C75S)
*: optional available
EXAMPLE
EXAMPLE P/N
PART NO.
PACKING CODE
RR
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
BZT52C2V4S RRG BZT52C2V4S
3
Version:H1709
BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Typical Forward Characteristics
1000
100
Fig. 2 Zener Breakdown Characteristics
Forward Current (mA)
100
Zener Current (mA)
T
A
=25
o
C
10
T
A
=25
o
C
1
10
0.1
1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.01
0
1
2
3
4
5
6
7
8
9
10 11 12
Forward Voltage (V)
Zener Voltage (V)
Fig. 3 Zener Breakdown Characteristics
100
700
600
Zener Current (mA)
10
Power Dissipation (mW)
500
400
300
200
100
0.01
15
25
35
45
55
65
75
85
0
0
Fig.4 Power Dissipation Curve
1
0.1
50
100
150
o
200
Zener Voltage (V)
Ambient Temperature ( C)
4
Version:H1709
BZT52C2V4S - BZT52C75S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Typical Capacitance
1000
Fig.6 Effect of Zener Voltage on Impedence
1000
I
Z
=1mA
Capacitance (pF)
1V Bias
100
Dynamic Impedence(Ohm)
I
Z
=5mA
100
10
Bias at 50% of
V
Z
(Nom)
10
I
Z
=120mA
1
1
10
Zener Voltage (V)
100
1
1
10
Zener Voltage (V)
100
5
Version:H1709
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