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BZT52C7V5-B0RHG

Zener Diode

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
Objectid
8054161358
包装说明
R-PDSO-F2
Reach Compliance Code
compliant
ECCN代码
EAR99
YTEOL
6.7
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
15 Ω
最大正向电压 (VF)
1 V
JESD-30 代码
R-PDSO-F2
JESD-609代码
e3
膝阻抗最大值
75 Ω
湿度敏感等级
1
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-65 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性
UNIDIRECTIONAL
最大功率耗散
0.5 W
标称参考电压
7.5 V
最大反向电流
0.9 µA
反向测试电压
5 V
表面贴装
YES
技术
ZENER
端子面层
MATTE TIN
端子形式
FLAT
端子位置
DUAL
最大电压容差
5%
工作测试电流
5 mA
文档预览
BZT52C2V4 thru BZT52C75
Taiwan Semiconductor
Small Signal Product
5% Tolerance SMD Zener Diode
FEATURES
- Wide zener voltage range selection : 2.4V to 75V
- Surface Mount Device Type
- Moisture sensitivity level 1
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- VZ Tolerance Selection of ±5%
- Matte Tin(Sn) lead finish
SOD-123F
MECHANICAL DATA
- Case: Flat lead SOD-123F small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight : 8.85 ± 0.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Forward Voltage
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature Range
(Note 1)
@ I
F
= 10mA
SYMBOL
V
F
P
D
R
θJA
T
J
, T
STG
VALUE
1
500
350
-65 to +150
UNIT
V
mW
o
C/W
o
C
Note 1: Valid provided that electrodes are kept at ambient temperature.
Zener I vs. V Characteristics
V
BR
I
ZK
Z
ZK
I
ZT
V
Z
Z
ZT
I
ZM
V
ZM
: Voltage at I
ZK
: Test current for voltage V
BR
: Dynamic impedance at I
ZK
: Test current for voltage V
Z
: Voltage at current I
ZT
: Dynamic impedance at I
ZT
: Maximum steady state current
: Voltage at I
ZM
Document Number: DS_S1408004
Version: F14
BZT52C2V4 thru BZT52C75
Taiwan Semiconductor
Small Signal Product
ELECTRICAL CHARACTERISTICS
( T
A
= 25 C unless otherwise noted )
Device
Marking
2V4Z
2V7Z
3V0Z
3V3Z
3V6Z
3V9Z
4V3Z
4V7Z
5V1Z
5V6Z
6V2Z
6V8Z
7V5Z
8V2Z
9V1Z
10VZ
11VZ
12VZ
13VZ
15VZ
16VZ
18VZ
20VZ
22VZ
24VZ
27VZ
30VZ
33VZ
36VZ
39VZ
43VZ
47VZ
51VZ
56VZ
62VZ
68VZ
75VZ
V
Z
Min
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.11
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
58.90
64.60
71.25
@ I
ZT
Nom
2.40
2.70
3.00
3.30
3.60
3.90
4.30
4.70
5.10
5.60
6.20
6.80
7.50
8.20
9.10
10.00
11.00
12.00
13.00
15.00
16.00
18.00
20.00
22.00
24.00
27.00
30.00
33.00
36.00
39.00
43.00
47.00
51.00
56.00
62.00
68.00
75.00
(Volt)
Max
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.86
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
65.10
71.40
78.75
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
Z
ZT
@ I
ZT
(Ω)
Max
100
100
100
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
200
215
240
255
I
ZK
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Z
ZK
@ I
ZK
(Ω)
Max
564
564
564
564
564
564
564
470
451
376
141
75
75
75
94
141
141
141
160
188
188
212
212
235
235
282
282
306
329
329
353
353
376
400
423
447
470
I
R
@ V
R
(μA)
Max
45
18
9
4.5
4.5
2.7
2.7
2.7
1.8
0.9
2.7
1.8
0.9
0.63
0.45
0.18
0.09
0.09
0.09
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.0
25.2
27.3
30.1
33.0
35.7
39.2
43.4
47.6
52.5
o
Part Number
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
BZT52C39
BZT52C43
BZT52C47
BZT52C51
BZT52C56
BZT52C62
BZT52C68
BZT52C75
Notes: 1. The Zener Voltage (V
Z
) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±5%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having
an RMS value equal to 10% of the dc zener current(I
ZT
or I
ZK
) is superimposed to I
ZT
or I
ZK
.
Document Number: DS_S1408004
Version: F14
BZT52C2V4 thru BZT52C75
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
Fig. 1 Typical Forward Characteristics
1000
T
A
=25
o
C
Forward Current (mA)
100
Zener Current (mA)
10
100
T
A
=25
o
C
Fig. 2 Zener Breakdown Characteristics
1
10
0.1
1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Forward Voltage (V)
0.01
0
1
2
3
4
5
6
7
8
9
10
11
12
Zener Voltage (V)
Fig. 3 Zener Breakdown Characteristics
100
700
600
Zener Current (mA)
10
Power Dissipation (mW)
500
400
300
200
100
0.01
15
25
35
45
55
65
75
85
0
0
Fig. 4 Power Dissipation Curve
1
0.1
50
100
150
200
Zener Voltage (V)
Ambient Temperature (
o
C)
Fig. 5 Typical Capacitance
1000
1000
Fig. 6 Effect of Zener Voltage on Impedence
I
Z
=1mA
Capacitance (pF)
100
Dynamic Impedence(Ohm)
I
Z
=5mA
100
1V Bias
10
Bias at 50% of V
Z
(Nom)
10
I
Z
=120mA
1
1
10
Zener Voltage (V)
100
1
1
10
Zener Voltage (V)
100
Document Number: DS_S1408004
Version: F14
BZT52C2V4 thru BZT52C75
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
PART NO.
BZT52Cxxx
(Note 1)
MANUFACTURE
CODE
(Note 2)
PACKING CODE
RH
GREEN COMPOUND
CODE
G
PACKAGE
SOD-123F
PACKING
3K / 7" Reel
Note 1: "xxx" defines voltage from 2.4V (BZT52C2V4) to 75V (BZT52C75)
Note 2: Manufacture special control, if empty means no special control requirement.
EXAMPLE
PREFERRED P/N
BZT52C75 RHG
BZT52C75-L0 RHG
BZT52C75-B0 RHG
PART NO.
BZT52C75
BZT52C75
BZT52C75
L0
B0
MANUFACTURE
CODE
PACKING CODE
RH
RH
RH
GREEN COMPOUND
CODE
G
G
G
DESCRIPTION
Green compound
Green compound
Green compound
PACKAGE OUTLINE DIMENSIONS
SOD-123F
DIM.
A
B
C
D
E
F
Unit (mm)
Min
1.50
3.30
0.50
2.50
0.80
0.05
Max
1.70
3.90
0.70
2.70
1.15
0.20
Unit (inch)
Min
0.059
0.130
0.020
0.098
0.031
0.002
Max
0.067
0.154
0.028
0.106
0.045
0.008
SUGGEST PAD LAYOUT
Unit (mm)
Typ.
2.86
1.52
1.34
4.20
1.80
Unit (inch)
Typ.
0.113
0.060
0.053
0.165
0.071
DIM.
C
G
X
X1
Y
Document Number: DS_S1408004
Version: F14
BZT52C2V4 thru BZT52C75
Taiwan Semiconductor
Small Signal Product
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1408004
Version: F14
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