BZT55C...
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
Applications
Voltage stabilization
96 12009
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
300K/W
x
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
TELEFUNKEN Semiconductors
Rev. A2, 24-Jun-96
1 (6)
BZT55C...
Type
BZT55C...
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
1)
V
Znom
V
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
I
ZT
for V
ZT 1)
and r
zjT
mA
V
W
5
2.28 to 2.56 < 85
5
2.5 to 2.9
< 85
5
2.8 to 3.2
< 90
5
3.1 to 3.5
< 90
5
3.4 to 3.8
< 90
5
3.7 to 4.1
< 90
5
4.0 to 4.6
< 90
5
4.4 to 5.0
< 80
5
4.8 to 5.4
< 60
5
5.2 to 6.0
< 40
5
5.8 to 6.6
< 10
5
6.4 to 7.2
<8
5
7.0 to 7.9
<7
5
7.7 to 8.7
<7
5
8.5 to 9.6
< 10
5
9.4 to 10.6
< 15
5
10.4 to 11.6 < 20
5
11.4 to 12.7 < 20
5
12.4 to 14.1 < 26
5
13.8 to 15.6 < 30
5
15.3 to 17.1 < 40
5
16.8 to 19.1 < 50
5
18.8 to 21.2 < 55
5
20.8 to 23.3 < 55
5
22.8 to 25.6 < 80
5
25.1 to 28.9 < 80
5
28 to 32
< 80
5
31 to 35
< 80
5
34 to 38
< 80
2.5
37 to 41
< 90
2.5
40 to 46
< 90
2.5
44 to 50
< 110
2.5
48 to 54
< 125
2.5
52 to 60
< 135
2.5
58 to 66
< 150
2.5
64 to 72
< 200
2.5
70 to 79
< 250
r
zjk
at I
ZK
W
mA
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 600
1
< 550
1
< 450
1
< 200
1
< 150
1
< 50
1
< 50
1
< 50
1
< 70
1
< 70
1
< 90
1
< 110
1
< 110
1
< 170
1
< 170
1
< 220
1
< 220
1
< 220
1
< 220
1
< 220
1
< 220
1
< 220
1
< 500
0.5
< 600
0.5
< 700
0.5
< 700
0.5
< 1000 0.5
< 1000 0.5
< 1000 0.5
< 1500 0.5
2)
I
R
and I
R 2)
at
m
A
m
A
< 50
< 100
< 10
< 50
<4
< 40
<2
< 40
<2
< 40
<2
< 40
<1
< 20
< 0.5
< 10
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<5
< 0.1
<5
< 0.1
<5
< 0.1
< 10
< 0.1
< 10
< 0.1
< 10
< 0.1
< 10
< 0.1
< 10
V
R
V
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
TK
VZ
%/K
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0,05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
t
p
/T
≤
100 ms,
tighter tolerances available on request:
BZT55A...
1% of V
Znom
BZT55B...
2% of V
Znom
BZT55F...
3% of V
Znom
at T
j
= 150°C
"
"
"
2 (6)
TELEFUNKEN Semiconductors
Rev. A2, 24-Jun-96
BZT55C...
600
P
tot
– Total Power Dissipation ( mW )
500
400
300
200
100
0
0
95 9602
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
Typical Characteristics
(T
j
= 25
_
C unless otherwise specified)
15
10
5
I
Z
=5mA
0
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
40
80
120
160
200
T
amb
– Ambient Temperature (
°C
)
95 9600
Figure 1. Total Power Dissipation vs. Ambient Temperature
1000
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
200
C
D
– Diode Capacitance ( pF )
– Voltage Change ( mV )
T
j
= 25°C
100
150
V
R
= 2V
100
T
j
= 25°C
I
Z
=5mA
10
D
V
Z
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 2. Typical Change of Working Voltage under Operating
Conditions at T
amb
=25
°
C
1.3
V
Ztn
– Relative Voltage Change
V
Ztn
=V
Zt
/V
Z
(25°C)
I
F
– Forward Current ( mA )
1.2
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
Figure 5. Diode Capacitance vs. Z–Voltage
100
10
T
j
= 25°C
1
1.1
4
2
1.0
0.9
0.8
–60
0
–2 10
–4
/K
–4
10
–4
/K
0.1
0.01
0.001
0
60
120
180
240
95 9605
0
0.2
0.4
0.6
0.8
1.0
95 9599
T
j
– Junction Temperature (
°C
)
V
F
– Forward Voltage ( V )
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
Figure 6. Forward Current vs. Forward Voltage
TELEFUNKEN Semiconductors
Rev. A2, 24-Jun-96
3 (6)
BZT55C...
100
r
Z
– Differential Z-Resistance (
W
)
1000
80
P
tot
=500mW
T
amb
=25°C
60
I
Z
=1mA
100
I
Z
– Z-Current ( mA )
5mA
10 10mA
40
20
0
0
4
8
12
16
20
1
0
95 9606
T
j
= 25°C
5
10
15
20
25
95 9604
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 7. Z–Current vs. Z–Voltage
50
P
tot
=500mW
T
amb
=25°C
Figure 9. Differential Z–Resistance vs. Z–Voltage
I
Z
– Z-Current ( mA )
40
30
20
10
0
15
20
25
30
35
95 9607
V
Z
– Z-Voltage ( V )
Figure 8. Z–Current vs. Z–Voltage
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
t
p
/T=0.05
1
10
–1
t
p
/T=0.02
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
t
p
/T=0.01
D
T=T
jmax
–T
amb
R
thJA
=300K/W
D
T/Z
thp
)
1/2
)/(2r
zj
)
10
0
10
1
t
p
– Pulse Length ( ms )
10
2
95 9603
Figure 10. Thermal Response
4 (6)
TELEFUNKEN Semiconductors
Rev. A2, 24-Jun-96
BZT55C...
Dimensions in mm
96 12071
TELEFUNKEN Semiconductors
Rev. A2, 24-Jun-96
5 (6)
汽车电子
