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BZT55B47 L0G

DIODE ZENER 47V 500MW MINI MELF

器件类别:半导体    分立半导体   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

下载文档
器件参数
参数名称
属性值
电压 - 齐纳(标称值)(Vz)
47V
容差
±2%
功率 - 最大值
500mW
阻抗(最大值)(Zzt)
110 Ohms
不同 Vr 时的电流 - 反向漏电流
100nA @ 35V
不同 If 时的电压 - 正向(Vf
1V @ 10mA
工作温度
-65°C ~ 175°C(TJ)
安装类型
表面贴装
封装/外壳
DO-213AC, MINI-MELF, SOD-80
供应商器件封装
迷你型 MELF
文档预览
BZT55B2V4 - BZT55B75
Taiwan Semiconductor
500mW 2% Zener Diodes
FEATURES
Wide zener voltage range selection: 2.4V to 75V
VZ Tolerance Selection of ± 2%
Surface device type mountin
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
tot
V
F
at I
F
=10mA
T
J
Max.
Package
Configuration
VALUE
2.4-75
5
500
1
175
LS34
Single dice
UNIT
V
mA
mW
V
°C
APPLICATIONS
Low voltage stabilzers or voltage references
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
● Case: Mini-MELF (Glass Seal)
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Polarity: Indicated by cathode band
● Weight: 29 ± 2.5mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=10mA
Total power dissipation
Junction temperature range
Storage temperature range
SYMBOL
V
F
P
tot
T
J
T
STG
PART NUMBER
1
500
-65 to +175
-65 to +175
UNIT
V
mW
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
500
UNIT
°C/W
1
Version:H1610
BZT55B2V4 - BZT55B75
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
ZENER VOLTAGE
PART
NUMBER
Min.
BZT55B2V4
BZT55B2V7
BZT55B3V0
BZT55B3V3
BZT55B3V6
BZT55B3V9
BZT55B4V3
BZT55B4V7
BZT55B5V1
BZT55B5V6
BZT55B6V2
BZT55B6V8
BZT55B7V5
BZT55B8V2
BZT55B9V1
BZT55B10
BZT55B11
BZT55B12
BZT55B13
BZT55B15
BZT55B16
BZT55B18
BZT55B20
BZT55B22
BZT55B24
BZT55B27
BZT55B30
BZT55B33
BZT55B36
BZT55B39
BZT55B43
BZT55B47
BZT55B51
BZT55B56
BZT55B62
BZT55B68
BZT55B75
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5..49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
V
Z
@ I
ZT
V
Nom.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
15.0
16.0
18.0
20.0
22.0
24.0
27.0
30.0
33.0
36.0
39.0
43.0
47.0
51.0
56.0
62.0
68.0
75.0
Max.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
69.36
76.50
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
TEST
CURRENT
I
ZT
mA
REGULAR
IMPEDANCE
Z
ZT
@ I
ZT
Max.
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
160
170
Z
ZK
@ I
ZK
Max.
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
600
700
700
1000
1000
1000
1000
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
TEST
CURRENT
I
ZK
mA
µA
Max.
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
28
32
35
38
42
47
51
56
LEAKAGE CURRENT
I
R
@ V
R
V
2
Version:H1610
BZT55B2V4 - BZT55B75
Taiwan Semiconductor
Notes:
1. The Zener Voltage (VZ) is tested under pulse condition of 10ms
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2%
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having an RMS value equal to 10% of the dc zener current(IZT or IZK) is superimposed to IZT or IZK
ORDERING INFORMATION
PART NO.
BZT55BXXX
(Note 1&2)
PACKING
CODE
L0
G
L1
PACKING CODE
SUFFIX
PACKAGE
Mini-MELF
(Glass Seal)
PACKING
10K / 13" Reel
2.5K / 7" Reel
Notes:
1. "xxx" defines voltage from 2.4V (BZT55B2V4) to 75V (BZT55B75)
2. Whole series with green compound
EXAMPLE
EXAMPLE P/N
BZT55B2V4 L0G
PART NO.
BZT55B2V4
PACKING CODE
L0
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
3
Version:H1610
BZT55B2V4 - BZT55B75
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig. 1 Typical Forward Characteristics
1000
100
Fig. 2 Zener Breakdown Characteristics
Forward Current (mA)
T
A
=25
o
C
Zener Current (mA)
10
T
A
=25
o
C
100
1
10
0.1
1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.01
0
1
2
3
4
5
6
7
8
9
10
11
12
Zener Voltage (V)
Forward Voltage (V)
Fig. 3 Zener Breakdown Characteristics
100
600
500
Power Dissipation (mW)
10
Zener Current (mA)
400
300
200
100
0
10
20
30
40
50
60
70
80
Fig. 4 Admissible Power Dissipation Curve
1
0.1
0.01
0
40
80
120
160
200
Zener Voltage (V)
Ambient Temperature (
o
C)
4
Version:H1610
BZT55B2V4 - BZT55B75
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig. 5 Typical Capacitance
1000
1000
Fig. 6 Effect of Zener Voltage on Impedence
100
Dynamic Impedence(Ohm)
Capacitance (pF)
100
10
10
I
Z
=5mA
I
Z
=20mA
1
1
10
Zener Voltage (V)
100
1
1
10
Zener Voltage (V)
100
5
Version:H1610
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