TELEFUNKEN Semiconductors
BZT55C...
Silicon Epitaxial Planar Z–Diodes
Features
D
Very sharp reverse characteristic
D
Low reverse current level
D
Very high stability
D
Low noise
D
Available with tighter tolerances
Applications
Voltage stabilization
94 9373
Absolute Maximum Ratings
T
j
= 25_C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
x300K/W
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
T
j
= 25_C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
Characteristics
T
j
= 25_C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Rev. A1: 12.12.1994
1
BZT55C...
Type
BZT55C...
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
1)
TELEFUNKEN Semiconductors
r
zjk
at
W
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
2)
V
Znorm
V
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
I
ZT
for V
ZT 1)
and r
zjT
mA
V
W
5
2.28 to 2.56 < 85
5
2.5 to 2.9
< 85
5
2.8 to 3.2
< 90
5
3.1 to 3.5
< 90
5
3.4 to 3.8
< 90
5
3.7 to 4.1
< 90
5
4.0 to 4.6
< 90
5
4.4 to 5.0
< 80
5
4.8 to 5.4
< 60
5
5.2 to 6.0
< 40
5
5.8 to 6.6
< 10
5
6.4 to 7.2
<8
5
7.0 to 7.9
<7
5
7.7 to 8.7
<7
5
8.5 to 9.6
< 10
5
9.4 to 10.6
< 15
5
10.4 to 11.6 < 20
5
11.4 to 12.7 < 20
5
12.4 to 14.1 < 26
5
13.8 to 15.6 < 30
5
15.3 to 17.1 < 40
5
16.8 to 19.1 < 50
5
18.8 to 21.2 < 55
5
20.8 to 23.3 < 55
5
22.8 to 25.6 < 80
5
25.1 to 28.9 < 80
5
28 to 32
< 80
5
31 to 35
< 80
5
34 to 38
< 80
2.5
37 to 41
< 90
2.5
40 to 46
< 90
2.5
44 to 50
< 110
2.5
48 to 54
< 125
2.5
52 to 60
< 135
2.5
58 to 66
< 150
2.5
64 to 72
< 200
2.5
70 to 79
< 250
I
ZK
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
I
R
and I
R 2)
at
mA
mA
< 100
< 50
< 10
< 50
<4
< 40
<2
< 40
<2
< 40
<2
< 40
<1
< 20
< 0.5
< 10
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<2
< 0.1
<5
< 0.1
<5
< 0.1
<5
< 0.1
< 10
< 0.1
< 10
< 0.1
< 10
< 0.1
< 10
< 0.1
< 10
V
R
V
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
TK
VZ
%/K
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0,05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
t
p
/T
≤
100 ms, tighter tolerances available on request.
at T
j
= 150°C
2
Rev. A1: 12.12.1994
TELEFUNKEN Semiconductors
BZT55C...
1000
D
V – Voltage Change ( mV )
Z
Typical Characteristics
(T
j
= 25_C unless otherwise specified)
600
P
tot
– Total Power Dissipation ( mW )
500
400
300
200
100
0
0
95 9602
T
j
= 25°C
100
I
Z
=5mA
10
1
40
80
120
160
200
95 9598
0
5
10
15
20
25
T
amb
– Ambient Temperature (
°C
)
V
Z
– Z-Voltage ( V )
Figure 1 : Total Power Dissipation vs. Ambient Temperature
Figure 2 : Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
15
1.3
V
Ztn
– Relative Voltage Change
V
Ztn
=V
Zt
/V
Z
(25°C)
1.2
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
10
1.1
4
2
5
I
Z
=5mA
0
1.0
0.9
0.8
–60
0
–2 10
–4
/K
–4
10
–4
/K
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
0
60
120
180
240
95 9599
T
j
– Junction Temperature (
°C
)
95 9600
Figure 3 : Typical Change of Working Voltage vs. Junction
Temperature
Figure 4 : Temperature Coefficient of Vz vs. Z–Voltage
200
C
D
– Diode Capacitance ( pF )
I
F
– Forward Current ( mA )
100
150
V
R
= 2V
100
T
j
= 25°C
10
T
j
= 25°C
1
0.1
0.01
0.001
50
0
0
95 9601
5
10
15
20
25
95 9605
0
0.2
0.4
0.6
0.8
1.0
V
Z
– Z-Voltage ( V )
Figure 5 : Diode Capacitance vs. Z–Voltage
V
F
– Forward Voltage ( V )
Figure 6 : Forward Current vs. Forward Voltage
Rev. A1: 12.12.1994
3
BZT55C...
100
50
TELEFUNKEN Semiconductors
I
Z
– Z-Current ( mA )
P
tot
=500mW
T
amb
=25°C
60
I
Z
– Z-Current ( mA )
80
40
P
tot
=500mW
T
amb
=25°C
30
40
20
0
0
4
8
12
16
20
20
10
0
15
20
25
30
35
95 9604
V
Z
– Z-Voltage ( V )
Figure 7 : Z–Current vs. Z–Voltage
95 9607
V
Z
– Z-Voltage ( V )
Figure 8 : Z–Current vs. Z–Voltage
1000
r
Z
– Differential Z-Resistance (
W
)
I
Z
=1mA
100
5mA
10 10mA
1
0
95 9606
T
j
= 25°C
5
10
15
20
25
V
Z
– Z-Voltage ( V )
Figure 9 : Differential Z–Resistance vs. Z–Voltage
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
t
p
/T=0.05
1
10
–1
t
p
/T=0.02
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
DT/Z
thp
)
1/2
)/(2r
zj
)
t
p
/T=0.01
R
thJA
=300K/W
DT=T
jmax
–T
amb
10
0
10
1
t
p
– Pulse Length ( ms )
10
2
95 9603
Figure 10 : Thermal Response
4
Rev. A1: 12.12.1994
TELEFUNKEN Semiconductors
BZT55C...
Dimensions in mm
Cathode Identification
technical drawings
according to DIN
specifications
94 9372
0.35
0.30
Quadro MELF
Glass Case similar to
JEDEC DO 213 AA
3.7
3.3
0.35
0.30
V
1.5
1.3
Rev. A1: 12.12.1994
5
