DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BZV49 series
Voltage regulator diodes
Product specification
Supersedes data of 1999 May 11
2005 Feb 03
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation: max. 1 W
•
Tolerance series: approx.
±5%
•
Working voltage range: nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
•
General regulation functions.
PINNING
PIN
1
2
3
anode
cathode
anode
BZV49 series
DESCRIPTION
1
3
DESCRIPTION
Medium-power voltage regulator diodes in a SOT89
plastic SMD package.
The diodes are available in the normalized E24 approx.
±5%
tolerance range. The series consists of 37 types with
nominal working voltages from 2.4 to 75 V (BZV49-C2V4
to BZV49-C75).
2
3
2
1
sym096
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BZV49-C2V4 to
BZV49-C75
note 1
Note
1. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (E24 range).
MARKING
TYPE
NUMBER
BZV49-C2V4
BZV49-C2V7
BZV49-C3V0
BZV49-C3Y3
BZV49-C3V6
BZV49-C3V9
BZV49-C4V3
BZV49-C4V7
BZV49-C5V1
BZV49-C5V6
MARKING
CODE
2Y4
2Y7
3Y0
3Y3
3Y6
3Y9
4Y3
4Y7
5Y1
5Y6
TYPE
NUMBER
BZV49-C6V2
BZV49-C6V8
BZV49-C7V5
BZV49-C8V2
BZV49-C9V1
BZV49-C10
BZV49-C11
BZV49-C12
BZV49-C13
BZV49-C15
MARKING
CODE
6Y2
6Y8
7Y5
8Y2
9Y1
10Y
11Y
12Y
13Y
15Y
TYPE
NUMBER
BZV49-C16
BZV49-C18
BZV49-C20
BZV49-C22
BZV49-C24
BZV49-C27
BZV49-C30
BZV49-C33
BZV49-C36
BZV49-C39
MARKING
CODE
16Y
18Y
20Y
22Y
24Y
27Y
30Y
33Y
36Y
39Y
TYPE
NUMBER
BZV49-C43
BZV49-C47
BZV49-C51
BZV49-C56
BZV49-C62
BZV49-C68
BZV49-C75
−
−
−
MARKING
CODE
43Y
47Y
51Y
56Y
62Y
68Y
75Y
−
−
−
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
2005 Feb 03
2
Philips Semiconductors
Product specification
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm
2
; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS
Total series
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 50 mA; see Fig.3
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.2
CONDITIONS
−
MIN.
BZV49 series
MAX.
250
UNIT
mA
see Table
“Per type”
−
−
−65
−
1
40
+150
150
W
W
°C
°C
MAX.
1
UNIT
V
2005 Feb 03
3
Per type
T
j
= 25
°C
unless otherwise specified.
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
see Figs 4 and 5
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
I
R
(µA)
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
18.4
16.4
18.4
20.4
14.4
16.4
12.4
14.4
16.0
18.0
20.0
22.0
10.4
12.4
14.0
9.2
11.4
13.0
7.0
9.4
11.0
5
5
5
5
5
5
5
6.0
8.4
10.0
5
5.4
7.4
9.0
5
4.5
6.4
8.0
5
3.8
5.5
7.0
5
150
90
85
85
80
75
75
70
60
60
55
3.2
4.6
6.2
5
150
2.5
4.0
5.3
5
150
1.2
3.0
4.5
5
200
0.4
2.3
3.7
5
200
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
−2.0
+1.2
+2.5
5
300
1
−2.7
+1.2
5
300
2
−0.8
−3.5
+0.2
5
300
3
−1.4
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
−3.5
0
5
450
3
1.0
−2.5
−3.5
0
5
450
3
1.0
−2.5
−3.5
0
5
450
5
1.0
−2.4
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
−3.5
0
5
450
5
1.0
6.0
−2.4
−3.5
0
5
450
10
1.0
6.0
−2.1
−3.5
0
5
450
20
1.0
6.0
−2.0
−3.5
0
5
450
50
1.0
6.0
−1.6
MIN.
TYP. MAX.
MAX.
MAX.
V
R
(V)
MAX.
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100
µs;
T
amb
= 25
°C
2005 Feb 03
Philips Semiconductors
BZV49-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
MIN.
MAX.
TYP.
2V4
2.2
2.6
70
2V7
2.5
2.9
75
Voltage regulator diodes
3V0
2.8
3.2
80
3V3
3.1
3.5
85
3V6
3.4
3.8
85
3V9
3.7
4.1
85
4V3
4.0
4.6
80
4V7
4.4
5.0
50
5V1
4.8
5.4
40
4
5V6
5.2
6.0
15
6V2
5.8
6.6
6
6V8
6.4
7.2
6
7V5
7.0
7.9
6
8V2
7.7
8.7
6
9V1
8.5
9.6
6
10
9.4
10.6
8
11
10.4
11.6
10
12
11.4
12.7
10
13
12.4
14.1
10
15
13.8
15.6
10
16
15.3
17.1
10
18
16.8
19.1
10
20
18.8
21.2
15
22
20.8
23.3
20
BZV49 series
Product specification
24
22.8
25.6
25
2005 Feb 03
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
see Figs 4 and 5
I
R
(µA)
MAX.
80
80
80
90
130
150
170
180
200
215
240
255
73.4
80.2
88.6
2
35
0.05
65.6
71.7
79.8
2
35
0.05
58.8
64.4
71.6
2
35
0.05
43.4
47.6
52.5
52.2
57.0
63.8
2
40
0.05
39.2
46.6
51.0
57.2
2
40
0.05
35.7
42.0
46.1
51.8
2
40
0.05
32.9
37.6
41.2
46.6
2
40
0.05
30.1
0.6
0.5
0.4
0.3
0.3
0.25
0.2
33.4
36.4
41.2
2
45
0.05
27.3
0.7
30.4
33.0
37.4
2
45
0.05
25.2
0.8
27.4
29.7
33.4
2
45
0.05
23.1
0.9
24.4
26.6
29.4
2
50
0.05
21.0
1.0
21.4
23.4
25.3
2
50
0.05
18.9
1.0
MIN.
TYP. MAX.
MAX.
MAX.
V
R
(V)
MAX.
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100
µs;
T
amb
= 25
°C
BZV49-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
Philips Semiconductors
MIN.
MAX.
TYP.
27
25.1
28.9
25
30
28.0
32.0
30
33
31.0
35.0
35
36
34.0
38.0
35
Voltage regulator diodes
39
37.0
41.0
40
43
40.0
46.0
45
47
44.0
50.0
50
51
48.0
54.0
60
56
52.0
60.0
70
62
58.0
66.0
80
68
64.0
72.0
90
5
75
70.0
79.0
95
BZV49 series
Product specification
