BZV55C2V4 - BZV55C75
Taiwan Semiconductor
500mW, 5% Tolerance SMD Zener Diodes
FEATURES
● Wide Zener voltage range selection: 2.4V to 75V
● V
Z
tolerance selection of ± 5%
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
D
V
F
at I
F
=10mA
T
J
Max.
Package
Configuration
VALUE
2.4-75
5
500
1
175
UNIT
V
mA
mW
V
°C
APPLICATIONS
● Low voltage stabilizers or voltage references
● Adapters
● On-board DC/DC converter
Mini-MELF
Single die
MECHANICAL DATA
●
●
●
●
Case: Mini-MELF
Terminal: Matte tin plated leads, solderable per J-STD-002
Polarity: Indicated by cathode band
Weight: 31mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=10mA
Power dissipation
Junction temperature range
Storage temperature range
SYMBOL
V
F
P
D
T
J
T
STG
VALUE
1
500
-65 to +175
-65 to +175
UNIT
V
mW
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
TYP
300
UNIT
°C/W
1
Version: G1804
BZV55C2V4 - BZV55C75
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
ZENER VOLTAGE
PART NUMBER
V
Z
@ I
ZT
V
Min.
BZV55C2V4
BZV55C2V7
BZV55C3V0
BZV55C3V3
BZV55C3V6
BZV55C3V9
BZV55C4V3
BZV55C4V7
BZV55C5V1
BZV55C5V6
BZV55C6V2
BZV55C6V8
BZV55C7V5
BZV55C8V2
BZV55C9V1
BZV55C10
BZV55C11
BZV55C12
BZV55C13
BZV55C15
BZV55C16
BZV55C18
BZV55C20
BZV55C22
BZV55C24
BZV55C27
BZV55C30
BZV55C33
BZV55C36
BZV55C39
BZV55C43
BZV55C47
BZV55C51
BZV55C56
BZV55C62
BZV55C68
BZV55C75
2.28
2.51
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
Nom.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
Max.
2.56
2.89
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.1
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
80
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
TEST
CURRENT
I
ZT
mA
REGULAR
IMPEDANCE
Z
ZT
@ I
ZT
Ω
Max.
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
160
170
Z
ZK
@ I
ZK
Ω
Max.
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
600
700
700
1,000
1,000
1,000
1,000
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
TEST
CURRENT
I
ZK
mA
LEAKAGE
CURRENT
I
R
@ V
R
µA
Max.
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
5.0
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
28
32
35
38
42
47
51
56
V
2
Version: G1804
BZV55C2V4 - BZV55C75
Taiwan Semiconductor
Notes:
1. The zener voltage (V
Z
) is tested under pulse condition of 30ms.
2. The device numbers listed have a standard tolerance on the normal zener voltage of ±5%.
3. For detailed information on price, availability and delivery of normal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having an rms value equal to 10% of the DC zener current(I
ZT
or I
ZK
) is superimposed to I
ZT
or I
ZK
.
ORDERING INFORMATION
PART NO.
(Note 1)
BZV55Cxxx L0
BZV55Cxxx L0G
BZV55Cxxx L1
BZV55Cxxx L1G
PACKAGE
MINI MELF
MINI MELF
MINI MELF
MINI MELF
PACKING
10K / 13" Reel
10K / 13" Reel
2.5K / 7" Reel
2.5K / 7" Reel
Notes:
"xxx" defines voltage from 2.4V (BZV55C2V4) to 75V (BZV55C75)
3
Version: G1804
BZV55C2V4 - BZV55C75
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Power Dissipation VS.
Ambient Temperature
600
500
Total Capacitance (pF)
400
300
200
100
0
0
40
80
120
o
Fig. 2 Total Capacitance
1000
f=1MHz
P
D
-Power dissipation (mW)
V
R
=0V
100
V
R
=2V
V
R
=5V
10
V
R
=20V
1
160
200
0
Temperature ( C)
V
R
=25V
20
40
60
V
Z
- Reverse Voltage (V)
80
Fig. 3 Differential Impedance VS. Zener Voltage
1000
Differential Zener Impedance(Ohm)
I
Z
=1mA
Forward Current (mA)
100
I
Z
=2mA
I
Z
=5mA
10
I
Z
=10mA
Fig.4 Forward Current VS. Forward Voltage
1000
100
10
1
1
0
1
10
V
Z
- Reverse Voltage (V)
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
- Forward Voltage (mV)
4
Version: G1804
BZV55C2V4 - BZV55C75
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSION
Mini-MELF
DIM.
A
B
C
Unit (mm)
Min
3.30
1.40
0.20
Max
3.70
1.60
0.50
Unit (inch)
Min
0.130
0.055
0.008
Max
0.146
0.063
0.020
SUGGEST PAD LAYOUT
DIM.
A
B
C
D
Unit (mm)
Typ
1.25
2.00
2.50
5.00
Unit (inch)
Typ
0.049
0.079
0.098
0.197
5
Version: G1804
