DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D130
BZV85 series
Voltage regulator diodes
Product specification
Supersedes data of 1996 Apr 26
1999 May 11
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 1.3 W
•
Tolerance series: approx.
±5%
•
Working voltage range:
nom. 3.6 to 75 V (E24 range)
•
Non-repetitive peak reverse power
dissipation: max. 60 W.
APPLICATIONS
•
Stabilization purposes.
DESCRIPTION
BZV85 series
Medium-power voltage regulator diodes in hermetically sealed leaded glass
SOD66 (DO-41) packages. The diodes are available in the normalized E24
approx.
±5%
tolerance range. The series consists of 33 types with nominal
working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).
handbook, halfpage
k
a
MAM241
The diodes are type branded.
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
PARAMETER
continuous forward current
non-repetitive peak reverse current t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.3
t
p
= 10 ms; half sinewave;
T
j
= 25
°C
prior to surge
P
tot
total power dissipation
T
amb
= 25
°C;
lead length 10 mm;
note 1
note 2
P
ZSM
T
stg
T
j
Notes
1. Device mounted on a printed circuit-board with 1 cm
2
copper area per lead.
2. If the leads are kept at T
tp
= 55
°C
at 4 mm from body.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 50 mA; see Fig.4
MAX.
1
UNIT
V
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
CONDITIONS
−
see Table
“Per type”
see Table
“Per type”
−
−
−
−65
−
1
1.3
60
+200
200
W
W
W
°C
°C
MIN.
MAX.
500
UNIT
mA
1999 May 11
2
1999 May 11
TEST
DIODE CAP.
TEMP. COEFF.
CURRENT
C
d
(pF)
S
Z
(mV/K)
at I
Ztest
I
Ztest
(mA) at f = 1 MHz;
see Figs 5 and 6
V
R
= 0 V
NON-REPETITIVE
PEAK REVERSE CURRENT
I
ZSM
at t
p
= 100
µs;
T
amb
= 25
°C
at t
p
= 10 ms;
T
amb
= 25
°C
MAX. (mA)
2000
1950
1850
1800
1750
1700
7.0
7.0
4.5
5.0
6.5
7.0
0.2
0.2
0.2
75
75
70
60
10
10
8
32.0
8
60
55
50
50
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
7.7
8.4
9.1
10.5
11.0
12.5
14.0
15.5
17
19
21
5.0
5.0
4.0
4.0
3.0
3.0
3.0
2.5
1.75
1.75
1.75
1.5
1.5
1.2
1.2
1620
1550
1500
1400
1340
1200
1100
1000
900
760
700
600
540
500
450
400
380
MAX. (A)
1.0
1.0
1.0
1.0
2.0
2.0
3.0
4.0
8.0
8.0
8.0
8.0
8.0
8.0
I
R
(µA)
V
R
(V)
MIN.
−3.5
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
80
85
85
90
150
0.7
0.2
150
0.7
150
1
200
2
200
2
300
2
300
3
300
3
450
5
450
10
450
50
−3.5
−2.7
0
+0.7
+2.2
2.7
3.6
4.3
5.5
6.1
7.2
8.5
9.3
10.8
12.0
13.6
15.4
17.1
19.1
22.1
24.3
27.5
−2.0
−0.5
0
0.6
1.3
2.5
3.1
3.8
4.7
5.3
6.3
7.4
8.9
10.7
11.8
13.6
16.6
18.3
20.1
22.4
−1.0
−1.0
MAX.
MAX.
MAX.
REVERSE
CURRENT at
REVERSE
VOLTAGE
Per type
T
j
= 25
°C
unless otherwise specified.
Philips Semiconductors
BZV85-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
MIN.
MAX.
MAX.
3V6
3.4
3.8
15
Voltage regulator diodes
3V9
3.7
4.1
15
4V3
4.0
4.6
13
4V7
4.4
5.0
13
5V1
4.8
5.4
10
5V6
5.2
6.0
7
6V2
5.8
6.6
4
3
6V8
6.4
7.2
3.5
7V5
7.0
7.9
3
8V2
7.7
8.7
5
9V1
8.5
9.6
5
10
9.4
10.6
8
11
10.4
11.6
10
12
11.4
12.7
10
13
12.4
14.1
10
15
13.8
15.6
15
16
15.3
17.1
15
18
16.8
19.1
20
20
18.8
21.2
24
22
20.8
23.3
25
24
22.8
25.6
30
BZV85 series
27
25.1
28.9
40
Product specification
30
28.0
32.0
45
1999 May 11
DIODE CAP.
TEMP. COEFF.
TEST
C
d
(pF)
S
Z
(mV/K)
CURRENT
at I
Ztest
I
Ztest
(mA) at f = 1 MHz;
V
R
= 0 V
see Figs 5 and 6
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE
PEAK REVERSE CURRENT
I
ZSM
at t
p
= 100
µs;
T
amb
= 25
°C
at t
p
= 10 ms;
T
amb
= 25
°C
MAX. (mA)
350
320
296
270
246
226
208
186
0.35
0.3
171
161
MAX. (A)
23
25
27
30
33
36
39
43
48
53
0.4
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
R
(µA)
V
R
(V)
MIN.
24.8
27.2
29.6
34.0
37.4
40.8
46.8
52.2
60.5
66.5
88.0
4
35
0.05
81.0
4
35
0.05
72.5
4
35
0.05
63.0
4
40
0.05
56.5
4
40
0.05
52.5
4
40
0.05
48.3
6
40
0.05
43.0
6
45
0.05
39.9
8
45
0.05
35.0
8
45
0.05
MAX.
MAX.
MAX.
BZV85-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
Philips Semiconductors
MIN.
MAX.
MAX.
33
31.0
35.0
45
36
34.0
38.0
50
39
37.0
41.0
60
Voltage regulator diodes
43
40.0
46.0
75
47
44.0
50.0
100
51
48.0
54.0
125
56
52.0
60.0
150
62
58.0
66.0
175
68
64.0
72.0
200
75
70.0
80.0
225
4
BZV85 series
Product specification
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board with 1 cm
2
copper area per lead.
GRAPHICAL DATA
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 4 mm; see Fig.2
lead length10 mm; note 1
BZV85 series
VALUE
110
175
UNIT
K/W
K/W
handbook, full pagewidth
10
3
MBG929
Rth j-tp
(K/W)
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
10
2
10
0.02
0.01
0
1
10
−2
tp
T
δ
=
tp
T
10
−1
1
10
10
2
10
3
tp (ms)
10
4
Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm.
1999 May 11
5
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