DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D130
BZV85 series
Voltage regulator diodes
Product data sheet
Supersedes data of 1996 Apr 26
1999 May 11
NXP Semiconductors
Product data sheet
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 1.3 W
•
Tolerance series: approx.
±5%
•
Working voltage range:
nom. 3.6 to 75 V (E24 range)
•
Non-repetitive peak reverse power
dissipation: max. 60 W.
APPLICATIONS
•
Stabilization purposes.
DESCRIPTION
BZV85 series
Medium-power voltage regulator diodes in hermetically sealed leaded glass
SOD66 (DO-41) packages. The diodes are available in the normalized E24
approx.
±5%
tolerance range. The series consists of 33 types with nominal
working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).
handbook, halfpage
k
a
MAM241
The diodes are type branded.
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
PARAMETER
continuous forward current
non-repetitive peak reverse current
t
p
= 100
μs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.3
t
p
= 10 ms; half sinewave;
T
j
= 25
°C
prior to surge
P
tot
total power dissipation
T
amb
= 25
°C;
lead length 10 mm;
note 1
note 2
P
ZSM
T
stg
T
j
Notes
1. Device mounted on a printed circuit-board with 1 cm
2
copper area per lead.
2. If the leads are kept at T
tp
= 55
°C
at 4 mm from body.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 50 mA; see Fig.4
MAX.
1
UNIT
V
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
μs;
square wave;
T
j
= 25
°C
prior to surge
CONDITIONS
−
see Table
“Per type”
see Table
“Per type”
−
−
−
−65
−
1
1.3
60
+200
200
W
W
W
°C
°C
MIN.
MAX.
500
UNIT
mA
1999 May 11
2
Per type
T
j
= 25
°C
unless otherwise specified.
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
TEMP. COEFF.
TEST
DIODE CAP.
S
Z
(mV/K)
CURRENT
C
d
(pF)
I
Ztest
(mA) at f = 1 MHz;
at I
Ztest
see Figs 5 and 6
V
R
= 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
I
R
(μA)
MIN.
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
MAX.
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
MAX.
15
15
13
13
10
7
4
3.5
3
5
5
8
10
10
10
15
15
20
24
25
30
40
45
MIN.
−3.5
−3.5
−2.7
−2.0
−0.5
0
0.6
1.3
2.5
3.1
3.8
4.7
5.3
6.3
7.4
8.9
10.7
11.8
13.6
16.6
18.3
20.1
22.4
MAX.
−1.0
−1.0
0
+0.7
+2.2
2.7
3.6
4.3
5.5
6.1
7.2
8.5
9.3
10.8
12.0
13.6
15.4
17.1
19.1
22.1
24.3
27.5
32.0
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
10
8
8
MAX.
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
50
50
MAX.
50
10
5
3
3
2
2
2
1
0.7
0.7
0.2
0.2
0.2
0.2
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
1.0
1.0
1.0
1.0
2.0
2.0
3.0
4.0
4.5
5.0
6.5
7.0
7.7
8.4
9.1
10.5
11.0
12.5
14.0
15.5
17
19
21
V
R
(V)
NON-REPETITIVE
PEAK REVERSE CURRENT
I
ZSM
at t
p
= 100
μs;
T
amb
= 25
°C
MAX. (A)
8.0
8.0
8.0
8.0
8.0
8.0
7.0
7.0
5.0
5.0
4.0
4.0
3.0
3.0
3.0
2.5
1.75
1.75
1.75
1.5
1.5
1.2
1.2
at t
p
= 10 ms;
T
amb
= 25
°C
MAX. (mA)
2 000
1 950
1 850
1 800
1 750
1 700
1 620
1 550
1 500
1 400
1 340
1 200
1100
1 000
900
760
700
600
540
500
450
400
380
1999 May 11
3
NXP Semiconductors
Voltage regulator diodes
BZV85-
CXXX
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
BZV85 series
Product data sheet
1999 May 11
4
NXP Semiconductors
BZV85-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
TEST
DIODE CAP.
TEMP. COEFF.
CURRENT
C
d
(pF)
S
Z
(mV/K)
I
Ztest
(mA) at f = 1 MHz;
at I
Ztest
see Figs 5 and 6
V
R
= 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
I
R
(μA)
V
R
(V)
23
25
27
30
33
36
39
43
48
53
Voltage regulator diodes
NON-REPETITIVE
PEAK REVERSE CURRENT
I
ZSM
at t
p
= 100
μs;
T
amb
= 25
°C
MAX. (A)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.4
0.35
0.3
at t
p
= 10 ms;
T
amb
= 25
°C
MAX. (mA)
350
320
296
270
246
226
208
186
171
161
MIN.
33
36
39
43
47
51
56
62
68
75
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
MAX.
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
80.0
MAX.
45
50
60
75
100
125
150
175
200
225
MIN.
24.8
27.2
29.6
34.0
37.4
40.8
46.8
52.2
60.5
66.5
MAX.
35.0
39.9
43.0
48.3
52.5
56.5
63.0
72.5
81.0
88.0
8
8
6
6
4
4
4
4
4
4
MAX.
45
45
45
40
40
40
40
35
35
35
MAX.
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
BZV85 series
Product data sheet
NXP Semiconductors
Product data sheet
Voltage regulator diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board with 1 cm
2
copper area per lead.
GRAPHICAL DATA
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 4 mm; see Fig.2
lead length10 mm; note 1
BZV85 series
VALUE
110
175
UNIT
K/W
K/W
handbook, full pagewidth
10
3
MBG929
Rth j-tp
(K/W)
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
10
2
10
0.02
0.01
0
1
10
−2
tp
T
δ
=
tp
T
10
−1
1
10
10
2
10
3
tp (ms)
10
4
Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm.
1999 May 11
5
