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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

BZV86 series

Low-voltage stabistors

Product speciﬁcation

Supersedes data of April 1992

1996 Mar 21

Philips Semiconductors

Product speciﬁcation

Low-voltage stabistors

FEATURES

•

Low-voltage stabilization

•

Forward voltage range: 1.4 to 3.2 V

•

Total power dissipation:

max. 330 mW

•

Differential resistance range:

max. 20 to 35

Ω.

APPLICATIONS

•

Power clipping

•

Level shifting

•

Low-voltage regulation

•

Temperature stabilization.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

continuous reverse voltage

continuous forward current

BZV86-1V4

BZV86-2V0

BZV86-2V6

BZV86-3V2

tot

stg

total power dissipation

storage temperature

junction temperature

amb

= 25

°C

−

CONDITIONS

The diodes are type branded.

BZV86 series

DESCRIPTION

Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass

package. The series consists of four types: BZV86-1V4 to BZV86-3V2.

handbook, halfpage

MAM246

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

MIN.

−

MAX.

200

150

125

100

330

+150

150

UNIT

°C

−65

−

1996 Mar 21

Philips Semiconductors

Product speciﬁcation

Low-voltage stabistors

ELECTRICAL CHARACTERISTICS

= 25

°C

unless otherwise specified.

SYMBOL

PARAMETER

forward voltage

BZV86-1V4

BZV86-2V0

BZV86-2V6

BZV86-3V2

dif

reverse current

differential resistance

BZV86-1V4

BZV86-2V0

BZV86-2V6

BZV86-3V2

dif

differential resistance

BZV86-1V4

BZV86-2V0

BZV86-2V6

BZV86-3V2

dif

differential resistance

BZV86-1V4

BZV86-2V0

BZV86-2V6

BZV86-3V2

temperature coefﬁcient

BZV86-1V4

BZV86-2V0

BZV86-2V6

BZV86-3V2

diode capacitance

= 0 V; f = 1 MHz

= 5 mA

−

= 10 mA; f = 1 kHz

−

= 5 mA; f = 1 kHz

−

= 5 V

= 1 mA; f = 1 kHz

−

100

CONDITIONS

= 5 mA; see Fig.2

1.30

1.85

2.35

2.85

−

MIN.

TYP.

BZV86 series

MAX.

1.50

2.15

2.80

3.45

200

−

32.5

17.5

−

UNIT

Ω

mV/K

−3.8

−6.0

−8.5

−11.5

THERMAL CHARACTERISTICS

SYMBOL

th j-tp

th j-a

PARAMETER

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

CONDITIONS

8 mm from the body

lead length 10 mm

VALUE

300

380

UNIT

K/W

1996 Mar 21

Philips Semiconductors

Product speciﬁcation

Low-voltage stabistors

GRAPHICAL DATA

BZV86 series

handbook, halfpage

(mA)

1V4

2V0

2V6

MBG518

3V2

−1

VF (V)

= 25

°C.

Fig.2

Forward current as a function of forward

voltage; typical values.

1996 Mar 21

Philips Semiconductors

Product speciﬁcation

Low-voltage stabistors

PACKAGE OUTLINE

BZV86 series

andbook, full pagewidth

0.56

max

1.85

max

25.4 min

4.25

max

25.4 min

MLA428 - 1

Dimensions in mm.

The marking band indicates the cathode.

The diodes are type-branded.

Fig.3 SOD27 (DO-35).

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

1996 Mar 21

参数对比

与BZV86-2V0T/R相近的元器件有：BZV86-2V6T/R、BZV86-3V2T/R、BZV86-1V4、BZV86-3V2、BZV86-2V6、BZV86-2V0、BZV86-1V4T/R。描述及对比如下：

型号	BZV86-2V0T/R	BZV86-2V6T/R	BZV86-3V2T/R	BZV86-1V4	BZV86-3V2	BZV86-2V6	BZV86-2V0	BZV86-1V4T/R
描述	DIODE SILICON, STABISTOR DIODE, DO-35, Stabistor Diode	DIODE SILICON, STABISTOR DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Stabistor Diode	DIODE SILICON, STABISTOR DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Stabistor Diode	DIODE SILICON, STABISTOR DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Stabistor Diode	DIODE SILICON, STABISTOR DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Stabistor Diode	DIODE SILICON, STABISTOR DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Stabistor Diode	DIODE SILICON, STABISTOR DIODE, DO-35, HERMETIC SEALED, GLASS PACKAGE-2, Stabistor Diode	DIODE SILICON, STABISTOR DIODE, DO-35, Stabistor Diode
Reach Compliance Code	compliant	unknown	unknown	unknown	unknown	unknown	unknown	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	DIFFERENTIAL RESISTANCE IS 30 OHMS	DIFFERENTIAL RESISTANCE IS 32.5 OHMS	DIFFERENTIAL RESISTANCE IS 35 OHMS	DIFFERENTIAL RESISTANCE IS 20 OHMS	DIFFERENTIAL RESISTANCE IS 35 OHMS	DIFFERENTIAL RESISTANCE IS 32.5 OHMS	DIFFERENTIAL RESISTANCE IS 30 OHMS	DIFFERENTIAL RESISTANCE IS 20 OHMS
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	STABISTOR DIODE	STABISTOR DIODE	STABISTOR DIODE	STABISTOR DIODE	STABISTOR DIODE	STABISTOR DIODE	STABISTOR DIODE	STABISTOR DIODE
最大正向电压 (VF)	2.15 V	2.8 V	3.45 V	1.5 V	3.45 V	2.8 V	2.15 V	1.5 V
正向电压最小值（VF）	1.85 V	2.35 V	2.85 V	1.3 V	2.85 V	2.35 V	1.85 V	1.3 V
JEDEC-95代码	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35
JESD-30 代码	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
元件数量	1	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2	2
封装主体材料	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
最大功率耗散	0.33 W	0.33 W	0.33 W	0.33 W	0.33 W	0.33 W	0.33 W	0.33 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
最高工作温度	150 °C	-	-	150 °C	150 °C	150 °C	150 °C	150 °C
反向测试电压	5 V	-	-	5 V	5 V	5 V	5 V	5 V
零件包装代码	-	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35	-
包装说明	-	HERMETIC SEALED, GLASS PACKAGE-2	HERMETIC SEALED, GLASS PACKAGE-2	O-LALF-W2	O-LALF-W2	O-LALF-W2	HERMETIC SEALED, GLASS PACKAGE-2	-
针数	-	2	2	2	2	2	2	-
Base Number Matches	-	1	1	1	1	1	1	-