DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D087
BZV90 series
Voltage regulator diodes
Product data sheet
Supersedes data of 1996 Oct 25
1999 May 17
NXP Semiconductors
Product data sheet
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 1 500 mW
•
Tolerance series: approx.
±5%
•
Working voltage range:
nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
•
General regulation functions.
1
handbook, halfpage
BZV90 series
PINNING
PIN
1
2, 4
3
anode
cathode
anode
DESCRIPTION
4
3
DESCRIPTION
Medium-power voltage regulator
diodes in SOT223 plastic SMD
packages.
The diodes are available in the
normalized E24 approx.
±5%
tolerance range. The series consists
of 37 types with nominal working
voltages from 2.4 to 75 V
(BZV90-C2V4 to C75).
1
Top view
2, 4
2
3
MAM242
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm
2
.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 50 mA; see Fig.3
MIN.
−
MAX.
1.0
UNIT
V
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
μs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1
t
p
= 100
μs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.2
CONDITIONS
−
see Table
“Per type”
−
−
−65
−
1 500
40
+150
150
mW
W
°C
°C
MIN.
MAX.
400
UNIT
mA
1999 May 17
2
Per type
T
j
= 25
°C
unless otherwise specified.
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
see Figs 4 and 5
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
I
R
(μA)
MIN.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
MAX.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
TYP.
70
75
80
85
85
85
80
50
40
15
6
6
6
6
6
8
10
10
10
10
10
10
15
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
MIN.
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
TYP. MAX.
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
16.4
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
MAX.
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
MAX.
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100
μs;
T
amb
= 25
°C
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1999 May 17
3
NXP Semiconductors
Voltage regulator diodes
BZV90-
CXXX
BZV90 series
Product data sheet
1999 May 17
4
NXP Semiconductors
BZV90-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
see Figs 4 and 5
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
I
R
(μA)
V
R
(V)
15.4
16.8
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100
μs;
T
amb
= 25
°C
MAX.
1.25
1.25
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
Voltage regulator diodes
MIN.
22
24
27
30
33
36
39
43
47
51
56
62
68
75
20.8
22.8
25.0
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
MAX.
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
TYP.
20
25
25
30
35
35
40
45
50
60
70
80
90
95
MAX.
55
70
80
80
80
90
130
150
170
180
200
215
240
255
MIN.
16.4
18.4
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
TYP. MAX.
18.4
20.4
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
20.0
22.0
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
5
5
2
2
2
2
2
2
2
2
2
2
2
2
MAX.
60
55
50
50
45
45
45
40
40
40
40
35
35
35
MAX.
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
BZV90 series
Product data sheet
NXP Semiconductors
Product data sheet
Voltage regulator diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
lead length max.; note 1
BZV90 series
VALUE
83.3
UNIT
K/W
1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm
2
.
GRAPHICAL DATA
MBG781
handbook, halfpage
10
3
MBG801
handbook, halfpage
300
PZSM
(W)
10
2
IF
(mA)
200
(1)
10
(2)
100
1
10
−1
1
duration (ms)
10
0
0.6
0.8
VF (V)
1
(1) T
j
= 25
°C
(prior to surge).
(2) T
j
= 150
°C
(prior to surge).
T
j
= 25
°C.
Fig.2
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Fig.3
Forward current as a function of forward
voltage; typical values.
1999 May 17
5
