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BZW04-7V0R1

Trans Voltage Suppressor Diode, 400W, 7.02V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, DO-41, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
O-PALF-W2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE
最大击穿电压
8.61 V
最小击穿电压
7.79 V
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-204AL
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
最大非重复峰值反向功率耗散
400 W
元件数量
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
1 W
最大重复峰值反向电压
7.02 V
表面贴装
NO
技术
AVALANCHE
端子面层
MATTE TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
BZW04 SERIES
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Excellent clamping capability
- Low impedance surge resistance
- 400W surge capability at 10 / 1000
μs
waveform
- Very fast response time
- Typical I
R
less than 1μA above 10V
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Transient Voltage Suppressor
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
Weight:
0.3g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25
o
C, Tp=1ms (Note 1)
Steady state power dissipation at T
L
=75
o
C
lead lengths .375", 9.5mm (Note 2)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load (Note 3)
Junction to leads
Junction to ambient on printed circuit
L lead=10mm
Operating junction temperature range
Storage temperature range
Note 2: Mounted on 5 x 5 mm Copper Pads to Each Terminal
Note 3: 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute Maximum
SYMBOL
P
PK
P
D
I
FSM
R
θJL
R
θJA
T
J
T
STG
VALUE
400
1
40
60
100
- 55 to +175
- 55 to +175
o
o
UNIT
Watts
Watts
A
C/W
C/W
O
O
C
C
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25
o
C Per Fig. 2
ORDERING INFORMATION
PART NO.
PACKING CODE
A0
BZW04-xxx
(Note 1)
R0
R1
B0
Note 1: "xxx" defines voltage from 5.8V (BZW04-5V8) to 376V (BZW04-376)
Suffix "G"
GREEN COMPOUND
CODE
DO-41
DO-41
DO-41
DO-41
3,000 / Ammo box (52mm taping)
5,000 / 13" Paper reel
5,000 / 13" Paper reel (Reverse)
1,000 / Bulk packing
PACKAGE
PACKING
EXAMPLE
PREFERRED P/N
BZW04-94 A0
BZW04-94 A0G
PART NO.
BZW04-94
BZW04-94
PACKING CODE
A0
A0
G
Green compound
GREEN COMPOUND
CODE
DESCRIPTION
Document Number: DS_D1406028
Version: H14
BZW04 SERIES
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(TA=25
o
C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
T
A
= 25
o
C
120
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, W
100
80
60
40
20
0
0
25
50
75
100
125
150
175
10
1
0.1
0.0001
0.001
0.01
0.1
1
10
tp, PULSE WIDTH, (mS)
T
A
, AMBIENT TEMPERATURE (
o
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
0
0
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
PM(AV), STEADY STATE POWER
DISSIPATION (W)
1.25
FIG.4 STEADY STATE POWER DERATING CURVE
tr=10μs
Peak Value
IPPM
1
Half Value-
10/1000μs, WAVEFORM
as DEFINED by R.E.A.
0.75
0.5
0.25
25
50
75
100
125
150
175
200
T
L
, LEAD TEMPERATURE (
o
C)
FIG. 5 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT UNIDIRECTIONAL ONLY
PEAK FORWARD SURGE CURRENT(A)
50
40
30
20
10
0
1
10
V(
BR
), BREAKDOWN VOLTAGE (V)
8.3ms Single Half
Sine Wave
100
Document Number: DS_D1406028
Version: H14
BZW04 SERIES
Taiwan Semiconductor
CREAT BY ART
FIG.7 TYPICAL JUNCTION CAPACITANCE
UNDIRECTIONAL
100000
f=1.0MHz
Vsig=50mVp-p
10000
MEASURE AT
ZERO BIAS
FIG. 6 TYPICAL REVERSE CHARACTERASTICS
100
INSTANTANEOUS REVERSE
CURRENT(A)
A
1
JUNCTION CAPACITANCE(pF)
10
MEASURED AT DEVICES
STAND-OFF
VOLTAGE, VWM
0.1
1000
MEASURE AT
STAND-OFF
VOLTAGE, VWM
100
1.0
10.0
100.0
0.01
0
50
100
150
200
250
300
350
400
450
500
V(
BR
), BREAKDOWN VOLTAGE (V)
V(
BR
), BREAKDOWN VOLTAGE (V)
Document Number: DS_D1406028
Version: H14
BZW04 SERIES
Taiwan Semiconductor
Breakdown
Voltage
Device
@ I
T
(Note 1)
V
BR
V
Unidirectional
BZW04-5V8
BZW04-6V4
BZW04-7V0
BZW04-7V8
BZW04-8V5
BZW04-9V4
BZW04-10
BZW04-11
BZW04-13
BZW04-14
BZW04-15
BZW04-17
BZW04-19
BZW04-20
BZW04-23
BZW04-26
BZW04-28
BZW04-31
BZW04-33
BZW04-37
BZW04-40
BZW04-44
BZW04-48
BZW04-53
BZW04-58
BZW04-64
BZW04-70
BZW04-78
BZW04-85
BZW04-94
BZW04-102
BZW04-110
BZW04-128
BZW04-136
BZW04-145
BZW04-154
BZW04-171
BZW04-188
BZW04-213
BZW04-239
BZW04-256
BZW04-273
BZW04-299
BZW04-342
BZW04-376
Notes:
1. Pulse test:tp<50ms
2. All terms and symbols are consistent with ANSI/IEEE C62.35
3. For bipolar types having V
WM
of 10 volts and less, the I
D
limit is doubled.
Document Number: DS_D1406028
Version: H14
Bidirectional
BZW04-5V8B
BZW04-6V4B
BZW04-7V0B
BZW04-7V8B
BZW04-8V5B
BZW04-9V4B
BZW04-10B
BZW04-11B
BZW04-13B
BZW04-14B
BZW04-15B
BZW04-17B
BZW04-19B
BZW04-20B
BZW04-23B
BZW04-26B
BZW04-28B
BZW04-31B
BZW04-33B
BZW04-37B
BZW04-40B
BZW04-44B
BZW04-48B
BZW04-53B
BZW04-58B
BZW04-64B
BZW04-70B
BZW04-78B
BZW04-85B
BZW04-94B
BZW04-102B
BZW04-110B
BZW04-128B
BZW04-136B
BZW04-145B
BZW04-154B
BZW04-171B
BZW04-188B
BZW04-213B
BZW04-239B
BZW04-256B
BZW04-273B
BZW04-299B
BZW04-342B
BZW04-376B
Min
6.45
7.13
7.79
8.65
9.50
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95
105
114
124
143
152
161
171
190
209
237
266
285
304
332
380
418
Max
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
231
263
294
315
336
368
420
462
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
5.80
6.40
7.02
7.78
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
64.1
70.1
78.0
85.5
94.0
102
111
128
136
145
154
171
188
213
239
256
273
299
342
376
I
T
mA
V
WM
V
Test
Current
Stand-Off
Voltage
Reverse
Leakage
@ V
WM
I
D
μA
(Note 3)
1000
500
200
50
10
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
38.0
35.4
33.0
30.0
27.6
25.7
24.0
22.0
19.0
17.8
16.0
14.5
13.0
12.0
10.7
9.6
8.8
8.0
7.4
6.7
6.2
5.7
5.2
4.7
4.3
3.9
3.5
3.2
2.9
2.6
2.4
2.2
2.0
1.8
1.7
1.6
1.5
1.4
1.2
1.1
1.0
0.9
0.8
0.75
0.67
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.5
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103
113
125
137
152
165
179
207
219
234
246
274
301
344
384
414
438
482
548
603
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.083
0.088
0.090
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.105
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Maximum
Peak Pulse
Current
I
PPM
A
Maximum
Clamping
Voltage @I
PPM
Vc
V
Maximum
Temperature
Coefficient
V
BR
%/
o
C
BZW04 SERIES
Taiwan Semiconductor
CREAT BY ART
PACKAGE OUTLINE DIMENSIONS
DO-204AL (DO-41)
DIM.
A
B
C
D
E
Unit (mm)
Min
2.00
0.71
25.40
4.20
25.40
Max
2.70
0.86
-
5.20
-
Unit (inch)
Min
0.079
0.028
1.000
0.165
1.000
Max
0.106
0.034
-
0.205
-
MARKING DIAGRAM
P/N =
G=
F=
Specific Device Code
Green Compound
Factory Code
YWW = Date Code
Document Number: DS_D1406028
Version: H14
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