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BZW04P145BHE3/54

Trans Voltage Suppressor Diode, 145V V(RWM), Bidirectional,

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Vishay(威世)
Reach Compliance Code
unknown
ECCN代码
EAR99
击穿电压标称值
174 V
最大钳位电压
234 V
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码
e3
极性
BIDIRECTIONAL
最大重复峰值反向电压
145 V
表面贴装
NO
端子面层
Matte Tin (Sn)
文档预览
BZW04P-5V8 thru BZW04-376
www.vishay.com
Vishay General Semiconductor
TransZorb
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
DO-204AL (DO-41)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
5.8 V to 376 V
400 W
1.5 W
40 A
175 °C
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial and telecommunication.
MECHANICAL DATA
Case:
DO-204AL, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
BZW04-213(B) ~ BZW04-376(B) for commercial grade only
DEVICES FOR BI-DIRECTION APPLICATIONS
For
bi-directional
BZW04P-6V4B).
types,
use
B
suffix
(e.g.
Electrical characteristics apply in both directions.
Polarity:
For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
(T
A
= 25 °C unles otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs
waveform
(1)
(fig. 1)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
400
See next
table
1.5
40
3.5/5.0
- 55 to + 175
UNIT
W
A
W
A
V
°C
Peak pulse current with a 10/1000 μs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only
(2)
Maximum instantaneous forward voltage at 25 A for uni-directional only
(3)
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)
V = 3.5 V for BZW04P(-)188 and below; V = 5.0 V for BZW04P(-)213 and above
F
F
Revision: 12-Jul-11
Document Number: 88316
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZW04P-5V8 thru BZW04-376
www.vishay.com
Vishay General Semiconductor
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
6.45
6.45
7.13
7.13
7.79
7.79
8.65
8.65
9.50
9.50
10.5
10.5
11.4
11.4
12.4
12.4
14.3
14.3
15.2
15.2
17.1
17.1
19.0
19.0
20.9
20.9
22.8
22.8
25.7
25.7
28.5
28.5
31.4
31.4
34.2
34.2
37.1
37.1
40.9
40.9
44.7
44.7
48.5
48.5
53.2
53.2
58.9
58.9
64.6
64.6
71.3
71.3
MAX.
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PART NUMBER
UNI-DIRECTIONAL
BZW04P5V8
BZW04-5V8
BZW04P6V4
BZW04-6V4
BZW04P7V0
BZW04-7V0
BZW04P7V8
BZW04-7V8
BZW04P8V5
BZW04-8V5
BZW04P9V4
BZW04-9V4
BZW04P10
BZW04-10
BZW04P11
BZW04-11
BZW04P13
BZW04-13
BZW04P14
BZW04-14
BZW04P15
BZW04-15
BZW04P17
BZW04-17
BZW04P19
BZW04-19
BZW04P20
BZW04-20
BZW04P23
BZW04-23
BZW04P26
BZW04-26
BZW04P28
BZW04-28
BZW04P31
BZW04-31
BZW04P33
BZW04-33
BZW04P37
BZW04-37
BZW04P40
BZW04-40
BZW04P44
BZW04-44
BZW04P48
BZW04-48
BZW04P53
BZW04-53
BZW04P58
BZW04-58
BZW04P64
BZW04-64
Revision: 12-Jul-11
BI-DIRECTIONAL
BZW04P5V8B
BZW04-5V8B
BZW04P6V4B
BZW04-6V4B
BZW04P7V0B
BZW04-7V0B
BZW04P7V8B
BZW04-7V8B
BZW04P8V5B
BZW04-8V5B
BZW04P9V4B
BZW04-9V4B
BZW04P10B
BZW04-10B
BZW04P11B
BZW04-11B
BZW04P13B
BZW04-13B
BZW04P14B
BZW04-14B
BZW04P15B
BZW04-15B
BZW04P17B
BZW04-17B
BZW04P19B
BZW04-19B
BZW04P20B
BZW04-20B
BZW04P23B
BZW04-23B
BZW04P26B
BZW04-26B
BZW04P28B
BZW04-28B
BZW04P31B
BZW04-31B
BZW04P33B
BZW04-33B
BZW04P37B
BZW04-37B
BZW04P40B
BZW04-40B
BZW04P44B
BZW04-44B
BZW04P48B
BZW04-48B
BZW04P53B
BZW04-53B
BZW04P58B
BZW04-58B
BZW04P64B
BZW04P64B
STAND-
TEST
OFF
CURRENT
VOLTAGE
I
T
(mA)
V
WM
(V)
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.80
5.80
6.40
6.40
7.02
7.02
7.78
7.78
8.55
8.55
9.4
9.4
10.2
10.2
11.1
11.1
12.8
12.8
13.6
13.6
15.3
15.3
17.1
17.1
18.8
18.8
20.5
20.5
23.1
23.1
25.6
25.6
28.2
28.2
30.8
30.8
33.3
33.3
36.8
36.8
40.2
40.2
43.6
43.6
47.8
47.8
53.0
53.0
58.1
58.1
64.1
64.1
MAXIMUM MAXIMUM MAXIMUM
REVERSE
PEAK
CLAMPING
LEAKAGE
PULSE
VOLTAGE
AT V
WM
CURRENT
AT I
PPM
I
PPM (2)
(A)
I
D (4)
( A)
V
C
(V)
1000
1000
500
500
200
200
50
50
10
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
38.0
38.0
35.4
35.4
33.0
33.0
30.0
30.0
27.6
27.6
25.7
25.7
24.0
24.0
22.0
22.0
19.0
19.0
17.8
17.8
16.0
16.0
14.5
14.5
13.0
13.0
12.0
12.0
10.7
10.7
9.6
9.6
8.8
8.8
8.0
8.0
7.4
7.4
6.7
6.7
6.2
6.2
5.7
5.7
5.2
5.2
4.7
4.7
4.3
4.3
3.9
3.9
10.5
10.5
11.3
11.3
12.1
12.1
13.4
13.4
14.5
14.5
15.6
15.6
16.7
16.7
18.2
18.2
21.2
21.2
22.5
22.5
25.2
25.2
27.7
27.7
30.6
30.6
33.2
33.2
37.5
37.5
41.5
41.5
45.7
45.7
49.9
49.9
53.9
53.9
59.3
59.3
64.8
64.8
70.1
70.1
77.0
77.0
85.0
85.0
92.0
92.0
103
103
MAXIMUM
TEMPERATURE
COEFFICIENT
OF
V
BR
(%/°C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.073
0.07
0.075
0.075
0.075
0.078
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
Document Number: 88316
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZW04P-5V8 thru BZW04-376
www.vishay.com
Vishay General Semiconductor
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
77.9
77.9
86.5
86.5
95.0
95.0
105
105
114
114
124
124
143
143
152
152
161
161
171
171
190
190
209
209
237
237
266
266
285
285
304
304
332
332
380
380
418
418
MAX.
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
308
294
330
315
352
336
385
368
440
420
484
462
MAXIMUM MAXIMUM MAXIMUM
REVERSE
PEAK
CLAMPING
LEAKAGE
PULSE
VOLTAGE
AT V
WM
CURRENT
AT I
PPM
(4)
( A)
(2)
(A)
I
PPM
I
D
V
C
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
3.5
3.5
3.2
3.2
2.9
2.9
2.6
2.6
2.4
2.4
2.2
2.2
2.0
2.0
1.8
1.8
1.7
1.7
1.6
1.6
1.5
1.5
1.4
1.4
1.2
1.2
1.1
1.1
1.0
1.0
0.90
0.90
0.80
0.80
0.75
0.75
0.67
0.67
113
113
125
125
137
137
152
152
165
165
179
179
207
207
219
219
234
234
246
246
274
274
301
301
344
344
384
384
414
414
438
438
482
482
548
548
603
603
MAXIMUM
TEMPERATURE
COEFFICIENT
OF
V
BR
(%/°C)
0.105
0.105
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PART NUMBER
UNI-DIRECTIONAL
BZW04P70
BZW04-70
BZW04P78
BZW04-78
BZW04P85
BZW04-85
BZW04P94
BZW04-94
BZW04P102
BZW04-102
BZW04P110
BZW04-110
BZW04P128
BZW04-128
BZW04P136
BZW404-136
BZW04P145
BZW04-145
BZW04P154
BZW04-154
BZW04P171
BZW04-171
BZW04P188
BZW04-188
BZW04P213
BZW04-213
BZW04P239
BZW04-239
BZW04P256
BZW04-256
BZW04P273
BZW04-273
BZW04P299
BZW04-299
BZW04P342
BZW04-342
BZW04P376
BZW04-376
BI-DIRECTIONAL
BZW04P70B
BZW04-70B
BZW04P78B
BZW04-78B
BZW04P85B
BZW04-85B
BZW04P94B
BZW04-94B
BZW04P102B
BZW04-102B
BZW04P110B
BZW04-110B
BZW04P128B
BZW04-128B
BZW04P136B
BZW404-136B
BZW04P145B
BZW04-145B
BZW04P154B
BZW04-154B
BZW04P171B
BZW04-171B
BZW04P188B
BZW04-188B
BZW04P213B
BZW04-213B
BZW04P239B
BZW04-239B
BZW04P256B
BZW04-256B
BZW04P273B
BZW04-273B
BZW04P299B
BZW04-299B
BZW04P342B
BZW04-342B
BZW04P376B
BZW04-376B
STAND-
TEST
OFF
CURRENT
VOLTAGE
I
T
(mA)
V
WM
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
70.1
70.1
78.0
78.0
85.5
85.5
94.0
94.0
102
102
111
111
128
128
136
136
145
145
154
154
171
171
188
188
213
213
239
239
256
256
273
273
299
299
342
342
376
376
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge current waveform per fig. 3 and derated per fig. 2
(3)
All terms and symbols are consistent with ANSI/IEEE C62.35
(4)
For bi-directional types having V
WM
of 10 V and less, the I
D
limit is doubled
ORDERING INFORMATION
(Example)
PREFERRED P/N
BZW04P10-E3/54
BZW04P10HE3/54 (1)
Note
(1)
AEC Q101 qualified
UNIT WEIGHT (g)
0.350
0.350
PREFERRED PACKAGE CODE
54
54
BASE QUANTITY
550
550
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
Revision: 12-Jul-11
Document Number: 88316
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZW04P-5V8 thru BZW04-376
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
10 000
P
PPM
- Peak Pulse Power (kW)
10
C
J
- Junction Capacitance (pF)
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25 °C
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Measured at
Zero Bias
1
100
Measured at Stand-Off
Voltage V
WM
10
0.1
0.1
1
10
100
1000
10 000
1
10
100
1000
t
d
- Pulse Width (µs)
V
BR
- Breakdown Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage (%)
100
100
60 Hz
Resistive or
Inductive Load
75
75
P
D
- Power Dissipation (%)
50
50
L = 0.375" (9.5 mm)
Lead Lengths
25
25
0
0
25
50
75
100
125
150
175
200
0
0
25
50
75
100
125
150
175
200
T
J
- Initial Temperature (°C)
T
L
- Lead Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Power Derating Curve
150
t
r
= 10 µs
Peak Value
I
PPM
I
PPM
- Peak Pulse Current, % I
RSM
100
Half Value - I
PP
I
PPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
Peak Forward Surge Current (A)
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
Decays to 50 % of I
PPM
100
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
10
1
10
100
t - Time (ms)
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Max. Non-Repetitive Forward Surge Current
Uni-Directional Only
Revision: 12-Jul-11
Document Number: 88316
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZW04P-5V8 thru BZW04-376
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-204AL (DO-41)
Vishay General Semiconductor
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.026 (0.66)
0.023 (0.58)
DIA.
Revision: 12-Jul-11
Document Number: 88316
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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