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BZW06-31A0

Trans Voltage Suppressor Diode, 600W, 30.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AC, DO-15, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
O-PALF-W2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
EXCELLENT CLAMPING CAPABILITY
最大击穿电压
37.8 V
最小击穿电压
34.2 V
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-204AC
JESD-30 代码
O-PALF-W2
最大非重复峰值反向功率耗散
600 W
元件数量
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
1.7 W
最大重复峰值反向电压
30.8 V
表面贴装
NO
技术
AVALANCHE
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
BZW06 SERIES
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Excellent clamping capability
- Low dynamic impedance
- 600W surge capability at 10 / 1000
μs
waveform
- Fast response time: Typically less than
1.0ps from 0 volt to V
BR
for unidirectional
and 5.0ns for bidirectional
- Typical I
R
less than 1μA above 10V
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Transient Voltage Suppressor
DO-204AC (DO-15)
MECHANICAL DATA
Case:
DO-204AC (DO-15)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
Weight:
0.4g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25 C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25
o
C, Tp=1ms (Note 1)
Steady state power dissipation at T
L
=75
o
C
lead lengths .375", 9.5mm
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Junction to leads
Junction to ambient on printed circuit
L lead=10mm
Operating junction temperature range
Storage temperature range
Note 1: Non-repetitive Current Pulse, Per Fig. 3
SYMBOL
P
PK
P
D
I
FSM
R
θJL
R
θJA
T
J
T
STG
VALUE
600
1.7
100
60
o
o
UNIT
Watts
Watts
A
100
- 55 to +175
- 55 to +175
C/W
o
o
C
C
ORDERING INFORMATION
PART NO.
PACKING CODE
A0
R0
B0
GREEN COMPOUND
CODE
Suffix "G"
PACKAGE
DO-15
DO-15
DO-15
PACKING
1,500 / Ammo box
3,500 / 13" Paper reel
1,000 / Bulk packing
BZW06-xxx
(Note 1)
Note 1: "xxx" defines voltage from 12.8V (BZW06-13) to 376V (BZW06-376)
EXAMPLE
PREFERRED P/N
BZW06-20 A0
BZW06-20 A0G
PART NO.
BZW06-20
BZW06-20
PACKING CODE
A0
A0
G
Green compound
GREEN COMPOUND
CODE
DESCRIPTION
Document Number: DS_D1406031
Version: G14
BZW06 SERIES
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA=25
o
C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100000
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
120
P
PPM
, PEAK PULSE POWER, W
10000
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
180
200
1000
100
10
0.001
0.01
0.1
1
10
100
tp, PULSE WIDTH, (ms)
T
A
, AMBIENT TEMPERATURE (
o
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
FIG. 4 CLAMPING VOLTAGE CURVE
1000
BWZ06-376
BWZ06-188
tr=10μs
Peak Value
I
PPM
Half Value-I
PPM
/2
10/1000μs, WAVEFORM
as DEFINED by R.E.A.
100
V
CL
, CLAMPING VOLTAGE(V)
BWZ06-58
BWZ06-33
BWZ06-19
BWZ06-10
10
BWZ06-5V8
tp=20μs
tp=1ms
tp=10ms
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10000
CJ, JUNCTION CAPACITANCE (pF)
A
1
0
1
10
100
Ipp, PEAK PULSE CURRENT(A)
1000
1000
BZW06-13
BZW06-58
100
f=1.0MHz
Vsig=50mVp-p
BZW06-171
10
1
10
100
1000
V(
BR
), BREAKDOWN VOLTAGE (V)
Document Number: DS_D1406031
Version: G14
BZW06 SERIES
Taiwan Semiconductor
CREAT BY ART
FIG. 6 TYPICAL JUNCTION CAPACITANCE
10000
100
CJ, JUNCTION CAPACITANCE (pF)
A
INSTANTANEOUS FORWARD
CURRENT(A)
FIG.7 TYPICAL FORWARD CHARACTERISTICS
UNDIRECTIONAL TYPE
1000
BZW06-13B
BZW06-58B
10
100
f=1.0MHz
Vsig=50mVp-p
BZW06-171B
25
o
C
150
o
C
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10
1
10
100
1000
V(
BR
), BREAKDOWN VOLTAGE (V)
FORWARD VOLTAGE(V)
FIG. 8 TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
100
10000
FIG. 9 RELATIVE VARIATION OF LEAKAGE CURRENT
vs JUNCTION TEMPERATURE
VR=VRM
1000
TRANSIENT THERMAL
IMPEDANCE(
o
C/W)
I
R
(T
J
) / I
R
(T
J
=25
o
C)
100
10
10
1
1
0.01
0.1
1
10
100
1000
T, PULSE DURATION (s)
0.1
0
25
50
75
T
J
(
o
C)
100
125
150
Document Number: DS_D1406031
Version: G14
BZW06 SERIES
Taiwan Semiconductor
CREAT BY ART
Breakdown
Voltage
Device
(Note 1)
V
BR
V
Unidirectional
BZW06-13
BZW06-15
BZW06-19
BZW06-20
BZW06-23
BZW06-26
BZW06-28
BZW06-31
BZW06-33
BZW06-37
BZW06-40
BZW06-48
BZW06-58
BZW06-70
BZW06-85
BZW06-102
BZW06-128
BZW06-154
BZW06-171
BZW06-188
BZW06-213
BZW06-256
BZW06-273
BZW06-299
BZW06-342
BZW06-376
Notes:
1. Pulse test:tp<50ms
2.
ΔV
BR
=
αT*(Tamb
- 25) * V
BR
(25
o
C)
3. V
R
=0V, F=1MHz, For bidirectional types, capacitance value is divided by 2.
Bidirectional
BZW06-13B
BZW06-15B
BZW06-19B
BZW06-20B
BZW06-23B
BZW06-26B
BZW06-28B
BZW06-31B
BZW06-33B
BZW06-37B
BZW06-40B
BZW06-48B
BZW06-58B
BZW06-70B
BZW06-85B
BZW06-102B
BZW06-128B
BZW06-154B
BZW06-171B
BZW06-188B
BZW06-213B
BZW06-256B
BZW06-273B
BZW06-299B
BZW06-342B
BZW06-376B
Min
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
53.2
64.6
77.9
95
114
143
171
190
209
237
285
304
332
380
418
Nom
15
18
22
24
27
30
33
36
39
43
47
56
68
82
100
120
150
180
200
220
250
300
320.0
350.0
400
440
Max
15.8
18.9
23.1
25.2
28.4
31.5
34.7
37.8
47.0
45.2
49.4
58.8
71.4
86.1
105
126
158
189
210
231
263
315
336
368
420
462
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
47.8
58.1
70.1
85.5
102
128
154
171
188
213
256
273
299
342
376
I
T
mA
V
WM
V
Test
Current
Stand-Off Reverse
Voltage
Leakage
@ V
WM
I
D
μA
Max
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Vc
V
Max
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
59.3
64.8
77.0
92.0
113
137
165
207
246
274
301
344
414
438
482
548
603
28.0
24.0
19.6
28.0
16.0
14.5
13.1
12.0
11.1
10.1
9.3
7.8
6.5
5.3
4.4
3.6
2.9
2.4
2.2
2.0
2.0
1.6
1.6
1.6
1.3
1.3
Clamping Voltage
@I
PPM
(10/1000
μs)
I
PPM
A
V
Max
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
75.0
84.0
100
121
146
178
212
265
317
353
388
442
529
564
618
706
776
147
123
102
93
83
75
68
62
57
52
48
40
33
27
23
19
15
13
11
10.3
9.0
7.6
7.1
6.5
5.7
5.7
Vc
Clamping Voltage
@I
PPM
(8/20
μs)
I
PPM
A
Maximum
Temperature
Coefficient
V
BR
%/
o
C
(Note 2)
0.084
0.088
0.092
0.094
0.096
0.097
0.098
0.099
0.100
0.101
0.101
0.103
0.104
0.105
0.106
0.107
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
Document Number: DS_D1406031
Version: G14
BZW06 SERIES
Taiwan Semiconductor
CREAT BY ART
PACKAGE OUTLINE DIMENSIONS
DO-204AC (DO-15)
DIM.
A
B
C
D
E
Unit (mm)
Min
2.60
0.70
25.40
5.80
25.40
Max
3.60
0.90
-
7.60
-
Unit (inch)
Min
0.102
0.028
1.000
0.228
1.000
Max
0.142
0.035
-
0.299
-
MARKING DIAGRAM
P/N =
G=
F=
Specific Device Code
Green Compound
Factory Code
YWW = Date Code
Document Number: DS_D1406031
Version: G14
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