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BZX284-C18

18V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, CERAMIC PACKAGE-2

器件类别:分立半导体    二极管   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
R-CDSO-R2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
400 Ω
JESD-30 代码
R-CDSO-R2
元件数量
1
端子数量
2
最高工作温度
150 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
0.4 W
认证状态
Not Qualified
标称参考电压
18 V
表面贴装
YES
技术
ZENER
端子形式
WRAP AROUND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
最大电压容差
5%
工作测试电流
5 mA
Base Number Matches
1
文档预览
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D154
BZX284 series
Voltage regulator diodes
Product data sheet
Supersedes data of 1999 Apr 19
2002 May 28
NXP Semiconductors
Product data sheet
Voltage regulator diodes
FEATURES
Total power dissipation:
max. 400 mW
Two tolerance series:
±2%
and
±5%
Working voltage range:
nom. 2.4 to 75 V (E24 range).
handbook, 4 columns
BZX284 series
DESCRIPTION
Low-power voltage regulator diodes in a SOD110 very small ceramic SMD
package. The diodes are available in the normalized E24
±2%
(BZX284-B) and
±5%
(BZX284-C) tolerance range. The series consists of 37 types with nominal
working voltages from 2.4 to 75 V.
cathode mark
k
k
a
a
APPLICATIONS
General regulation functions.
bottom view
side view
top view
MAM219
Fig.1 Simplified outline (SOD110) and symbol.
MARKING
TYPE
NUMBER
BZX284-B2V4
BZX284-B2V7
BZX284-B3V0
BZX284-B3V3
BZX284-B3V6
BZX284-B3V9
BZX284-B4V3
BZX284-B4V7
BZX284-B5V1
BZX284-B5V6
BZX284-B6V2
BZX284-B6V8
BZX284-B7V5
BZX284-B8V2
BZX284-B9V1
BZX284-B10
BZX284-B11
BZX284-B12
BZX284-B13
MARKING
CODE
WO
WP
WQ
WR
WS
WT
WU
WV
WW
WX
WY
WZ
XA
XB
XC
XD
XE
XF
XG
TYPE
NUMBER
BZX284-B15
BZX284-B16
BZX284-B18
BZX284-B20
BZX284-B22
BZX284-B24
BZX284-B27
BZX284-B30
BZX284-B33
BZX284-B36
BZX284-B39
BZX284-B43
BZX284-B47
BZX284-B51
BZX284-B56
BZX284-B62
BZX284-B68
BZX284-B75
MARKING
CODE
XH
XI
XJ
XK
XL
XM
XN
XO
XP
XQ
XR
XS
XT
XU
XV
XW
XX
XY
TYPE
NUMBER
BZX284-C2V4
BZX284-C2V7
BZX284-C3V0
BZX284-C3V3
BZX284-C3V6
BZX284-C3V9
BZX284-C4V3
BZX284-C4V7
BZX284-C5V1
BZX284-C5V6
BZX284-C6V2
BZX284-C6V8
BZX284-C7V5
BZX284-C8V2
BZX284-C9V1
BZX284-C10
BZX284-C11
BZX284-C12
BZX284-C13
MARKING
CODE
YO
YP
YQ
YR
YS
YT
YU
YV
YW
YX
YY
YZ
ZA
ZB
ZC
ZD
ZE
ZF
ZG
TYPE
NUMBER
BZX284-C15
BZX284-C16
BZX284-C18
BZX284-C20
BZX284-C22
BZX284-C24
BZX284-C27
BZX284-C30
BZX284-C33
BZX284-C36
BZX284-C39
BZX284-C43
BZX284-C47
BZX284-C51
BZX284-C56
BZX284-C62
BZX284-C68
BZX284-C75
MARKING
CODE
ZH
ZI
ZJ
ZK
ZL
ZM
ZN
ZO
ZP
ZQ
ZR
ZS
ZT
ZU
ZV
ZW
ZX
ZY
2002 May 28
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
tot
T
stg
T
j
Note
1. Device mounted on a printed-circuit board: 11
×
25
×
1.6 mm.
ELECTRICAL CHARACTERISTICS
Total BZX284-B and BZX284-C series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZX284-B/C2V4
BZX284-B/C2V7
BZX284-B/C3V0
BZX284-B/C3V3
BZX284-B/C3V6
BZX284-B/C3V9
BZX284-B/C4V3
BZX284-B/C4V7
BZX284-B/C5V1
BZX284-B/C5V6
BZX284-B/C6V2
BZX284-B/C6V8
BZX284-B/C7V5
BZX284-B/C8V2
BZX284-B/C9V1
BZX284-B/C10
BZX284-B/C11
BZX284-B/C12
BZX284-B/C13
BZX284-B/C15 to 75
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 4 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 8 V
V
R
= 8 V
V
R
= 0.7V
Znom
CONDITIONS
I
F
= 10 mA; see Fig.2
I
F
= 100 mA; see Fig.2
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
storage temperature
junction temperature
t
p
= 100
μs;
square wave;
T
amb
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1
CONDITIONS
MIN.
BZX284 series
MAX.
250
UNIT
mA
see Tables 1 and 2
−65
400
+150
150
mW
°C
°C
MAX.
0.9
1.1
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
V
V
UNIT
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
nA
nA
nA
nA
nA
nA
nA
2002 May 28
3
Table 1
Per type BZX284-B/C2V4 to
B/C24
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 5 mA
Tol.
±2%
(B)
MIN.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.80
11.80
12.70
14.70
15.70
17.60
19.60
21.60
23.50
MAX.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.20
12.20
13.30
15.30
16.30
18.40
20.40
22.40
24.50
Tol.
±5%
(C)
MIN.
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
MAX.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
at I
Ztest
= 1 mA
TYP.
275
300
325
350
375
400
410
425
400
80
40
30
15
20
20
20
25
25
25
25
25
25
30
30
30
MAX.
400
450
500
500
500
500
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
at I
Ztest
= 5 mA
TYP.
70
75
80
85
85
85
80
50
40
15
6
6
2
2
2
2
2
2
2
3
4
4
4
5
6
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
20
20
20
25
30
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
16.4
18.4
20.4
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 5 mA
(see Figs 3 and 4)
TYP.
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
108
105
103
99
97
93
88
84
80
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
MAX.
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
μs;
T
amb
= 25
°C
MAX.
2002 May 28
4
NXP Semiconductors
Voltage regulator diodes
BZX284-
Bxxx
Cxxx
BZX284 series
Product data sheet
Table 2
Per type BZX284-B/C27 to
B/C75
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 2 mA
Tol.
±2%
(B)
MIN.
27
30
33
36
39
43
47
51
56
62
68
75
26.50
29.40
32.30
35.30
38.20
42.10
46.10
50.00
54.90
60.80
66.60
73.50
MAX.
27.50
30.60
33.70
36.70
39.80
43.90
47.90
52.00
57.10
63.20
69.40
76.50
Tol.
±5%
(C)
MIN.
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
MAX.
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
at I
Ztest
= 0.5 mA
TYP.
35
35
40
40
40
45
45
45
50
60
75
85
MAX.
250
250
275
300
300
325
325
350
375
400
400
400
8
10
11
15
25
30
30
35
40
50
55
70
at I
Ztest
= 2 mA
TYP.
MAX.
40
40
40
60
75
80
90
110
120
140
160
175
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
TYP.
73
66
60
59
58
56
55
52
49
44
40
35
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 2 mA
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
MAX.
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
μs;
T
amb
= 25
°C
MAX.
2002 May 28
5
NXP Semiconductors
Voltage regulator diodes
BZX284-
Bxxx
Cxxx
BZX284 series
Product data sheet
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