DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BZX55 series
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 Apr 26
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 500 mW
•
Tolerance series:
±5%
•
Working voltage range:
nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
•
Low voltage stabilizers or voltage
references.
The diodes are type branded.
BZX55 series
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The diodes are available in the normalized E24
±5%
tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 to 75 V
(BZX55-C2V4 to BZX55-C75).
handbook, halfpage
k
a
MAM239
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 50
°C;
note 1
T
amb
= 50
°C;
note 2
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
t
p
= 8.3 ms; square wave;
T
j
≤
150
°C
prior to surge
T
stg
T
j
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature
≤
50
°C;
lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 100 mA; see Fig.4
MIN.
−
MAX.
1.0
V
UNIT
storage temperature
junction temperature
CONDITIONS
MIN.
−
MAX.
250
UNIT
mA
see Table
“Per type”
−
−
−
−
−65
−
400
500
40
30
+200
200
mW
mW
W
W
°C
°C
1996 Apr 26
2
1996 Apr 26
TEMP. COEFF.
TEST
S
Z
(mV/K)
CURRENT
at I
Ztest
I
Ztest
(mA)
see Figs 5 and 6
at
at
T
j
= 25
°C
T
j
= 150
°C
V
R
(V)
MAX.
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2
2
2
0.1
0.1
0.1
0.1
85
85
80
75
5
5
5
75
70
60
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
2
2
2
2
2
2
2
2
2
2
1.0
2.0
3.0
5.0
6.15
6.8
7.5
8.25
9.0
9.75
11.25
12.0
13.5
15.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
6.0
6.0
MAX.
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
2
10
20
40
40
40
40
50
100
MAX.
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
REVERSE CURRENT at
REVERSE VOLTAGE
I
R
(µA)
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(A)
at t
p
= 100
µs;
T
amb
= 25
°C
TYP.
−1.8
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
90
150
150
150
200
200
300
300
300
450
450
450
450
450
450
450
−1.9
−2.1
−2.2
−2.4
−2.4
−2.4
−1.4
−0.8
1.6
2.2
3.0
3.8
4.5
5.5
6.5
7.7
8.4
9.8
11.3
12.8
14.4
16.0
MAX.
Per type
T
j
= 25
°C;
unless otherwise specified.
BZX55-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
Philips Semiconductors
at
I
Z
at
I
Ztest
MIN.
MAX.
MAX.
MAX.
2V4
2.28
2.56
600
85
Voltage regulator diodes
2V7
2.5
2.9
600
85
3V0
2.8
3.2
600
85
3V3
3.1
3.5
600
85
3V6
3.4
3.8
600
85
3V9
3.7
4.1
600
85
4V3
4.0
4.6
600
80
4V7
4.4
5.0
600
70
3
8
7
7
5V1
4.8
5.4
550
50
5V6
5.2
6.0
450
30
6V2
5.8
6.6
200
10
6V8
6.4
7.2
150
7V5
7.0
7.9
50
8V2
7.7
8.7
50
9V1
8.5
9.6
50
10
10
9.4
10.6
70
15
11
10.4
11.6
70
20
12
11.4
12.7
90
20
13
12.4
14.1
110
26
15
13.8
15.6
110
30
16
15.3
17.1
170
40
BZX55 series
18
16.8
19.1
170
50
Product specification
20
18.8
21.2
220
55
1996 Apr 26
TEMP. COEFF.
TEST
S
Z
(mV/K)
CURRENT
at I
Ztest
I
Ztest
(mA)
see Figs 5 and 6
REVERSE CURRENT at
REVERSE VOLTAGE
I
R
(µA)
at
at
T
j
= 25
°C
T
j
= 150
°C
V
R
(V)
MAX.
16.5
18.0
20.25
22.25
24.75
27.0
29.25
32.25
35.25
38.25
42.0
2
2
2
46.5
51.0
56.25
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
1.0
1.0
1.25
1.25
MAX.
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
2
2
2
2
2
2
2
2
2
2
MAX.
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(A)
at t
p
= 100
µs;
T
amb
= 25
°C
TYP.
18.7
20.4
22.9
27.0
29.7
32.4
35.1
38.7
44.0
49.0
55.0
62.0
70.0
78.0
2.5
35
2.5
35
2.5
35
2.5
40
2.5
40
2.5
40
2.5
40
2.5
45
5
45
5
45
5
50
5
50
5
55
5
60
MAX.
BZX55-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at
I
Z
at
I
Ztest
Philips Semiconductors
MIN.
MAX.
MAX.
MAX.
22
20.8
23.3
220
55
24
22.8
25.6
220
80
27
25.1
28.9
220
80
Voltage regulator diodes
30
28.0
32.0
220
80
33
31.0
35.0
220
80
36
34.0
38.0
220
80
39
37.0
41.0
500
90
43
40.0
46.0
600
90
47
44.0
50.0
700
110
51
48.0
54.0
700
125
4
56
52.0
60.0
1000
135
62
58.0
66.0
1000
150
68
64.0
72.0
1000
200
75
70.0
79.0
1500
250
Note
1. For BZX55-C2V4 up to C36 I
Z
= 1 mA; for C39 up to C75 I
Z
= 0.5 mA.
BZX55 series
Product specification
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board without metallization pad.
GRAPHICAL DATA
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 8 mm
BZX55 series
VALUE
300
380
UNIT
K/W
K/W
lead length max.; see Fig.2 and note 1
10
3
handbook, full pagewidth
Rth j-a
(K/W)
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
MBG930
10
2
10
0.02
0.01
≤0.001
tp
T
tp
T
δ
=
1
10
−1
1
10
10
2
10
3
10
4
tp (ms)
10
5
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
1996 Apr 26
5
