DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BZX55 series
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 Apr 26
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 500 mW
•
Tolerance series:
±5%
•
Working voltage range:
nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
•
Low voltage stabilizers or voltage
references.
The diodes are type branded.
BZX55 series
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The diodes are available in the normalized E24
±5%
tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 to 75 V
(BZX55-C2V4 to BZX55-C75).
handbook, halfpage
k
a
MAM239
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 50
°C;
note 1
T
amb
= 50
°C;
note 2
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
t
p
= 8.3 ms; square wave;
T
j
≤
150
°C
prior to surge
T
stg
T
j
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature
≤
50
°C;
lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 100 mA; see Fig.4
MIN.
−
MAX.
1.0
V
UNIT
storage temperature
junction temperature
CONDITIONS
MIN.
−
MAX.
250
UNIT
mA
see Table
“Per type”
−
−
−
−
−65
−
400
500
40
30
+200
200
mW
mW
W
W
°C
°C
1996 Apr 26
2
1996 Apr 26
3
Philips Semiconductors
Per type
T
j
= 25
°C;
unless otherwise specified.
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at
I
Z
MAX.
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
at
I
Ztest
MAX.
85
85
85
85
85
85
80
70
50
30
10
8
7
7
10
15
20
20
26
30
40
50
55
TYP.
−1.8
−1.9
−2.1
−2.2
−2.4
−2.4
−2.4
−1.4
−0.8
1.6
2.2
3.0
3.8
4.5
5.5
6.5
7.7
8.4
9.8
11.3
12.8
14.4
16.0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
MAX.
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
TEMP. COEFF.
TEST
S
Z
(mV/K)
CURRENT
at I
Ztest
I
Ztest
(mA)
see Figs 5 and 6
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
REVERSE CURRENT at
REVERSE VOLTAGE
I
R
(µA)
at
at
T
j
= 25
°C
T
j
= 150
°C
MAX.
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
MAX.
100
50
40
40
40
40
20
10
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
5.0
6.15
6.8
7.5
8.25
9.0
9.75
11.25
12.0
13.5
15.0
V
R
(V)
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(A)
at t
p
= 100
µs;
T
amb
= 25
°C
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
Voltage regulator diodes
BZX55-
CXXX
MIN.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
2.28
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
MAX.
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
BZX55 series
Product specification
1996 Apr 26
4
Philips Semiconductors
BZX55-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at
I
Z
MAX.
220
220
220
220
220
220
500
600
700
700
1000
1000
1000
1500
at
I
Ztest
MAX.
55
80
80
80
80
80
90
90
110
125
135
150
200
250
TEMP. COEFF.
TEST
S
Z
(mV/K)
CURRENT
at I
Ztest
I
Ztest
(mA)
see Figs 5 and 6
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
REVERSE CURRENT at
REVERSE VOLTAGE
I
R
(µA)
at
at
T
j
= 25
°C
T
j
= 150
°C
MAX.
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
MAX.
2
2
2
2
2
2
2
2
2
2
2
2
2
2
16.5
18.0
20.25
22.25
24.75
27.0
29.25
32.25
35.25
38.25
42.0
46.5
51.0
56.25
V
R
(V)
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(A)
at t
p
= 100
µs;
T
amb
= 25
°C
MAX.
1.25
1.25
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
Voltage regulator diodes
MIN.
22
24
27
30
33
36
39
43
47
51
56
62
68
75
Note
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
MAX.
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
TYP.
18.7
20.4
22.9
27.0
29.7
32.4
35.1
38.7
44.0
49.0
55.0
62.0
70.0
78.0
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
MAX.
60
55
50
50
45
45
45
40
40
40
40
35
35
35
1. For BZX55-C2V4 up to C36 I
Z
= 1 mA; for C39 up to C75 I
Z
= 0.5 mA.
BZX55 series
Product specification
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board without metallization pad.
GRAPHICAL DATA
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 8 mm
BZX55 series
VALUE
300
380
UNIT
K/W
K/W
lead length max.; see Fig.2 and note 1
10
3
handbook, full pagewidth
Rth j-a
(K/W)
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
MBG930
10
2
10
0.02
0.01
≤0.001
tp
T
tp
T
δ
=
1
10
−1
1
10
10
2
10
3
10
4
tp (ms)
10
5
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
1996 Apr 26
5
单片机
