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BZX55A24/TR

DIODE 24 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, GLASS PACKAGE-2, Voltage Regulator Diode

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
零件包装代码
DO-35
包装说明
GLASS PACKAGE-2
针数
2
Reach Compliance Code
unknown
Is Samacsys
N
Base Number Matches
1
文档预览
VISHAY
BZX55..Series
Vishay Semiconductors
Zener Diodes
\
Features
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
94 9367
• Available with tighter tolerances
Mechanical Data
Case:
DO-35 Glass Case
Weight:
approx. 130 mg
Packaging Codes/Options:
TR / 10k per 13 " reel, 30k/box
TAP / 10k per Ammopack (52 mm tape), 30k/box
Applications
Voltage stabilization
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test condition
l = 4 mm, T
L
= 25 °C
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
- 65 to
+ 175
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 4 mm, T
L
= constant
Symbol
R
thJA
Value
300
Unit
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 200 mA
Symbol
V
F
Max
1.5
Unit
V
Document Number 85604
Rev. 1, 21-Feb-03
www.vishay.com
1
BZX55..Series
Vishay Semiconductors
Electrical Characteristics
BZX55C..
Partnumber
Zener Voltage
Range
1)
VISHAY
Dynamic
Resistance
r
zjT
@
r
zjK
@
I
ZT
,
I
ZK
,
f = 1 kHz f = 1 kHz
Test
Current
I
ZT
Temperature
Coefficient
TK
VZ
Test
Current
I
ZK
Reverse Leakage Current
I
R
@
T
amb
=
25 °C
µA
< 50
< 10
<4
<2
<2
<2
<1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
< 10
< 10
< 10
< 10
< 10
I
R
@
T
amb
=
150 °C
@ V
R
V
Z
@ I
ZT
V
min
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C3V9
BZX55C4V3
BZX55C4V7
BZX55C5V1
BZX55C5V6
BZX55C6V2
BZX55C6V8
BZX55C7V5
BZX55C8V2
BZX55C9V1
BZX55C10
BZX55C11
BZX55C12
BZX55C13
BZX55C15
BZX55C16
BZX55C18
BZX55C20
BZX55C22
BZX55C24
BZX55C27
BZX55C30
BZX55C33
BZX55C36
BZX55C39
BZX55C43
BZX55C47
BZX55C51
BZX55C56
BZX55C62
BZX55C68
BZX55C75
1)
mA
min
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
-0.09
-0.09
-0.08
-0.08
-0.08
-0.08
-0.06
-0.05
-0.02
-0.05
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
%/K
max
-0.06
-0.06
-0.05
-0.05
-0.05
-0.05
-0.03
0.02
0.02
0.05
0.06
0.07
0.07
0.08
0.09
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
V
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
max
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
< 85
< 85
< 85
< 85
< 85
< 85
< 75
< 60
< 35
<25
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
2.28
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
Tighter tolerances available on request:
BZX55A... ± 1% of V
Znom
, BZX55F... ± 3% of V
Znom
www.vishay.com
2
Document Number 85604
Rev. 1, 21-Feb-03
VISHAY
Electrical Characteristics
BZX55B..
Partnumber
Zener Voltage
Range
1)
BZX55..Series
Vishay Semiconductors
Dynamic
Resistance
r
zjT
@
r
zjK
@
I
ZT
,
I
ZK
,
f = 1 kHz f = 1 kHz
Test
Current
I
ZT
Temperature
Coefficient
TK
VZ
Test
Current
I
ZK
Reverse Leakage Current
I
R
@
T
amb
=
25 °C
µA
< 10
<4
<2
<2
<2
<1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 50
< 40
< 40
< 40
< 40
< 20
< 10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
< 10
< 10
< 10
< 10
< 10
I
R
@
T
amb
=
150 °C
@ V
R
V
Z
@ I
ZT
V
min
BZX55B2V7
BZX55B3V0
BZX55B3V3
BZX55B3V6
BZX55B3V9
BZX55B4V3
BZX55B4V7
BZX55B5V1
BZX55B5V6
BZX55B6V2
BZX55B6V8
BZX55B7V5
BZX55B8V2
BZX55B9V1
BZX55B10
BZX55B11
BZX55B12
BZX55B13
BZX55B15
BZX55B16
BZX55B18
BZX55B20
BZX55B22
BZX55B24
BZX55B27
BZX55B30
BZX55B33
BZX55B36
BZX55B39
BZX55B43
BZX55B47
BZX55B51
BZX55B56
BZX55B62
BZX55B68
BZX55B75
1)
mA
min
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
-0.09
-0.08
-0.08
-0.08
-0.08
-0.06
-0.05
-0.02
-0.05
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
%/K
max
-0.06
-0.05
-0.05
-0.05
-0.05
-0.03
0.02
0.02
0.05
0.06
0.07
0.07
0.08
0.09
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0,12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
V
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
max
2.76
3.06
3.36
3.68
3.98
4.38
4.8
5.2
5.72
6.32
6.94
7.65
8.36
9.28
10.2
11.22
12.24
13.26
15.3
16.3
18.36
20.4
22.45
24.5
27.6
30.6
33.6
36.7
39.8
43.9
47.9
52
57.1
63.2
69.4
76.5
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
2.64
2.94
3.24
3.52
3.82
4.22
4.6
5
5.48
6.08
6.66
7.35
8.04
8.92
9.8
10.78
11.76
12.74
14.7
15.7
17.64
19.6
21.55
23.5
26.4
29.4
32.4
35.3
38.2
42.1
46.1
50
54.9
60.8
66.6
73
Tighter tolerances available on request:
BZX55A... ± 1% of V
Znom
, BZX55F... ± 3% of V
Znom
Document Number 85604
Rev. 1, 21-Feb-03
www.vishay.com
3
BZX55..Series
Vishay Semiconductors
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
R
thJA
–Therm.Resist.Junction/ Ambient ( K/W)
VISHAY
500
V
Ztn
– Relative
VoltageChange
1.3
V
Ztn
=V
Zt
/V
Z
(25°C)
1.2
1.1
1.0
0.9
0.8
–60
95 9599
TK
VZ
=10 x 10
–4
/K
400
300
l
200
100
T
L
=constant
0
0
5
10
15
20
l – Lead Length ( mm )
l
8 x 10
–4
/K
6 x 10
–4
/K
4 x 10
–4
/K
2 x 10
–4
/K
0
–2 x 10
–4
/K
–4 x 10
–4
/K
0
60
120
180
240
95 961
1
T
j
– Junction Temperature (°C )
Figure 1. Thermal Resistance vs. Lead Length
Figure 4. Typical Change of Working Voltage vs. Junction
Temperature
TK
VZ
–Temperature Coefficient of V
Z
( 10
–4
/K)
P –Total Power Dissipation ( mW)
tot
600
500
400
300
200
100
0
15
10
5
I
Z
=5mA
0
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
0
40
80
120
160
200
95 9602
T
amb
– Ambient T
emperature(°C )
95 9600
Figure 2. Total Power Dissipation vs. Ambient Temperature
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
1000
C
D
– Diode Capacitance ( pF )
V
Z
–VoltageChange mV )
(
200
T
j
=25°C
100
150
V
R
=2V
100
T
j
=25°C
I
Z
=5mA
10
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 3. Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
Figure 6. Diode Capacitance vs. Z-Voltage
www.vishay.com
4
Document Number 85604
Rev. 1, 21-Feb-03
VISHAY
BZX55..Series
Vishay Semiconductors
50
40
30
20
10
0
P
tot
=500mW
T
amb
=25°C
100
I
F
– Forward Current ( mA)
T
j
=25°C
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
I
Z
– Z-Current ( mA)
10
15
95 9607
20
25
30
35
95 9605
V
F
– Forward Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 7. Forward Current vs. Forward Voltage
Figure 9. Z-Current vs. Z-Voltage
I
Z
– Z-Current ( mA)
80
60
40
20
0
0
4
8
12
r
Z
– Differential Z-Resistance (
)
100
1000
P
tot
=500mW
T
amb
=25°C
I
Z
=1mA
100
5mA
10 10mA
1
16
20
95 9606
T
j
=25°C
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
95 9604
V
Z
– Z-Voltage ( V )
Figure 8. Z-Current vs. Z-Voltage
Z
thp
–ThermalResistance PulseCond.(K/W)
for
Figure 10. Differential Z-Resistance vs. Z-Voltage
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
t
p
/T=0.02
t
p
/T=0.05
1
10
–1
10
0
10
1
t
p
– Pulse Length ( ms )
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
x T/Z
thp
)
1/2
)/(2r
zj
)
10
2
t
p
/T=0.01
R
thJA
=300K/W
T=T
jmax
–T
amb
95 9603
Figure 11. Thermal Response
Document Number 85604
Rev. 1, 21-Feb-03
www.vishay.com
5
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