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BZX55B18TA

Zener Diode, 18V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS, DO-204AH, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Tak Cheong

厂商官网:http://www.takcheong.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Tak Cheong
零件包装代码
DO-204
包装说明
O-LALF-W2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
METALLURGICALLY BONDED
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
JEDEC-95代码
DO-35
JESD-30 代码
O-LALF-W2
JESD-609代码
e3
元件数量
1
端子数量
2
最高工作温度
200 °C
最低工作温度
-65 °C
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
0.5 W
认证状态
Not Qualified
标称参考电压
18 V
表面贴装
NO
技术
ZENER
端子面层
TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
最大电压容差
2%
工作测试电流
5 mA
文档预览
®
TAK CHEONG
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Licensed by
ON Semiconductor
,
A trademark of
semiconductor
Components Industries, LLC for
Zener Technology
and
Products
.
Maximum Ratings
(Note 1)
Rating
Maximum Steady State Power Dissipation
@TL≤75℃,
Lead Length = 3/8”
Derate Above 75℃
Operating and Storage
Temperature Range
Symbol
P
D
Value
500
4.0
T
J
, T
stg
-65 to +200
Units
mW
mW/℃
°C
AXIAL LEAD
DO35
Note 1: Some part number series have lower JEDEC registered ratings.
Specification Features:
Zener Voltage Range = 2.4V to 91V
ESD Rating of Clas 3 (>6 KV) per Human Body Model
DO-35 Package (DO-204AH)
Double Slug Type Construction
Metallurgical Bonded Construction
Cathode
Anode
Specification Features:
Case
:
Double slug type, hermetically sealed glass
Finish
:
All external surfaces are corrosion resistant and leads are readily solderable
Polarity :
Cathode indicated by polarity band
Mounting:
Any
Maximum Lead Temperature for Soldering Purposes
230℃, 1/16” from the case for 10 seconds
L
79Cxxx
L
55C
xxx
= Logo
= BZX79Cxxx Device Code
Ordering Information
Device
BZX55Cxxx
BZX55CxxxRL
BZX55CxxxRL2*
BZX55CxxxRR1 !
BZX55CxxxRR2 i
BZX55CxxxTA
BZX55CxxxTA2*
BZX55CxxxRA1 !
BZX55CxxxRA2 i
Package
Axial Lead
Axial Lead
Axial Lead
Lead Form
Lead Form
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Quantity
3000 Units / Box
5000 Units / Tape & Reel
5000 Units / Tape & Reel
3000 Units / Radial Tape & Reel
3000 Units / Radial Tape & Reel
5000 Units / Tape & Ammo
5000 Units / Tape & Ammo
3000 Units / Radial Tape & Ammo
3000 Units / Radial Tape & Ammo
* The “2” suffix refer to 26mm tape spacing.
! “1”: Polarity band
up
with cathode lead off first.
i “2”: Polarity band
down
with cathode lead off first.
Devices listed in
bold italic
are Tak Cheong
Preferred
devices.
Preferred
devices are recommended choices
for future use and best overall value.
December 2005 / B
http://takcheong.com
1
BZX55C2V4 through BZX55C91 Series
BZX55C2V4 through BZX55C91 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25ºC unless
otherwise noted. V
F
= 1.3 V Max @ I
F
= 100mA for all types)
Symbol
V
Z
I
ZT
Z
ZT
I
ZM
I
R
V
R
I
F
V
F
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Zener Current
Maximum Zener Impedance @ I
ZT
Maximum DC Zener Current
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS
(T
A
= 25ºC unless otherwise noted, V
F
= 1.3 V Max @ I
F
= 100mA for all types)
Max Zener
Impedance
(Note 4)
V
ZT
@ I
ZT
(Volts)
Device
Marking
55C2V4
55C2V7
55C3V0
55C3V3
55C3V6
55C3V9
55C4V3
55C4V7
55C5V1
55C5V6
55C6V2
55C6V8
55C7V5
55C8V2
55C9V1
55C10
55C11
55C12
55C13
55C15
(Note 2.)
Max Reverse
Leakage Current
I
R
at V
R
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
T
amb
25°C
°
(µA)
µ
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
T
amb
125°C
°
(µA)
µ
100
50
40
40
40
40
20
10
c
2
2
2
2
2
2
2
2
2
2
2
I
ZM
V
R
(Volts)
1
1
1
1
1
1
1
1
1
1
2
3
5
6
7
7.5
8.5
9
10
11
(Note 3.)
Z
ZT
@ I
ZT
(Ω)
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
Device
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C3V9
BZX55C4V3
BZX55C4V7
BZX55C5V1
BZX55C5V6
BZX55C6V2
BZX55C6V8
BZX55C7V5
BZX55C8V2
BZX55C9V1
BZX55C10
BZX55C11
BZX55C12
BZX55C13
BZX55C15
Min
2.28
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
Max
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
(mA)
155
135
125
115
105
95
90
85
80
70
64
58
53
47
43
40
36
32
29
27
2. TOLERANCE AND VOLTAGE DESIGNATION (V
Zt
)
Tolerance designation – the type numbers listed have zener voltage min/max limits as shown. Device tolerance of
±2%
are
Indicated by a “B” instead of a “C”. Zener voltage is measured with the device junction thermal equilibrium at the temperature
of 30°C
±1°C
and 3/8” lead length.
3. MAXIMUM ZENER CURRENT RATINGS (I
ZM
)
This data was calculated using nominal voltages. The maximum current handling capability on a worst case basis is limited
by the actual zener voltage at the operation point and the power derating curve.
4. ZENER IMPEDANCE (Z
Z
) DERIVATION
Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits
are for I
Z(AC)
= 0.1 I
Z(DC)
with AC frequency = 60Hz.
http://www.takcheong.com
2
BZX55C2V4 through BZX55C91 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25ºC unless otherwise noted, V
F
= 1.3 V Max @ I
F
= 100mA for all types)
Max Zener
Impedance
(Note 7)
V
ZT
@ I
ZT
(Volts)
Device
Marking
55C16
55C18
55C20
55C22
55C24
55C27
55C30
55C33
55C36
55C39
55C43
55C47
55C51
55C56
55C62
55C68
55C75
55C82
55C91
(Note 5.)
Max Reverse
Leakage Current
I
R
at V
R
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1
T
amb
25°C
°
(µA)
µ
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
T
amb
125°C
°
(µA)
µ
2
2
2
2
2
2
2
2
2
5
5
5
10
10
10
10
10
10
10
I
ZM
V
R
(Volts)
12
14
15
17
18
20
22
24
27
28
32
35
38
42
47
51
56
62
69
(Note 6.)
Z
ZT
@ I
ZT
(Ω)
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
160
170
200
250
Device
BZX55C16
BZX55C18
BZX55C20
BZX55C22
BZX55C24
BZX55C27
BZX55C30
BZX55C33
BZX55C36
BZX55C39
BZX55C43
BZX55C47
BZX55C51
BZX55C56
BZX55C62
BZX55C68
BZX55C75
BZX55C82
BZX55C91
Min
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
Max
17.1
19.1
21.1
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
80
87
96
(mA)
24
21
20
18
16
14
13
12
11
10
9.2
8.5
7.8
7
6.4
5.9
5.3
4.8
4.3
5. TOLERANCE AND VOLTAGE DESIGNATION (V
Zt
)
Tolerance designation – the type numbers listed have zener voltage min/max limits as shown. Device tolerance of
±2%
are
Indicated by a “B” instead of a “C”. Zener voltage is measured with the device junction thermal equilibrium at the temperature
of 30°C
±1°C
and 3/8” lead length.
6. MAXIMUM ZENER CURRENT RATINGS (I
ZM
)
This data was calculated using nominal voltages. The maximum current handling capability on a worst case basis is limited
by the actual zener voltage at the operation point and the power derating curve.
7. ZENER IMPEDANCE (Z
Z
) DERIVATION
Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits
are for I
Z(AC)
= 0.1 I
Z(DC)
with AC frequency = 60Hz.
http://www.takcheong.com
3
BZX55C2V4 through BZX55C91 Series
0.7
HEAT
SINKS
0.6
P D , MAXIMUM STEADY STATE
POWER DISSIPATION (WATTS)
0.5
0.4
3/8"
3/8"
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
180
200
T L , LEAD TEMPERATURE (°C)
Figure 1. Steady State Power Derating
http://www.takcheong.com
4
BZX55C2V4 through BZX55C91 Series
APPLICATION NOTE - ZENER VOLTAGE
θ
JL, JUNCTION TO LEAD THERMAL RESISTANCE (
°
C/W)
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
θ
LA
P
D
+ T
A
.
500
400
L
300
L
2.4-60 V
200
θ
LA
is the lead-to-ambient thermal resistance (°C/W) and P
D
is the power dissipation. The value for
θ
LA
will vary and
depends on the device mounting method.
θ
LA
is generally 30
to 40°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of T
L
, the junction temperature
may be determined by:
T
J
= T
L
+
∆T
JL
.
62-200 V
100
0
0
0.2
0.4
0.6
0.8
1
L , LEAD LENGTH TO HEAT SINK (INCH)
Figure 2. Typical Thermal Resistance
1000
7000
5000
2000
1000
700
500
200
100
70
50
I R , LEAKAGE CURRENT (
µ
A)
20
10
7
5
2
1
0.7
0.5
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
∆T
JL
is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
∆T
JL
=
θ
JL
P
D
.
For worst-case design, using expected limits of I
Z
, limits
of P
D
and the extremes of T
J
(∆T
J
) may be estimated.
Changes in voltage, V
Z
, can then be found from:
∆V
=
θ
VZ
T
J
.
θ
VZ
, the zener voltage temperature coefficient, is found
from Figures 4 and 5.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 7. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 7 be exceeded.
+125°C
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
3
4
5
6
7
8
9
10
11
12
13
VZ , NOMINAL ZENER VOLTAGE (VOLTS)
14
15
+25°C
Figure 3. Typical Leakage Current
http://www.takcheong.com
5
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