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BZX55C27

Zener Diode; Configuration: Single; Tolerance: 0.05; VZ Typ (V): 27; P Max (mW): 500; Package: DO-35

器件类别:分立半导体    二极管   

厂商名称:Galaxy Microelectronics

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Galaxy Microelectronics
零件包装代码
DO-35
包装说明
O-LALF-W2
Reach Compliance Code
unknown
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
80 Ω
JEDEC-95代码
DO-35
JESD-30 代码
O-LALF-W2
元件数量
1
端子数量
2
最高工作温度
175 °C
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
极性
UNIDIRECTIONAL
最大功率耗散
0.5 W
标称参考电压
27 V
表面贴装
NO
技术
ZENER
端子形式
WIRE
端子位置
AXIAL
最大电压容差
5%
工作测试电流
5 mA
文档预览
BL
FEATURES
BZX55 --- SERIES
ZENER DIODES
POWER DISSIPATION: 500 mW
Silicon planar power zener diodes
The zener voltages are graded according to the
international E 24 standard. Standard zener voltage
tolerance is ±5%. Replace suffix "C" with "B" for ±2%,
Replace suffix "C" with "A" for 1%.
other voltage tolerance and other zener voltage are
available upon request.
Case:DO-35, Glass Case
Terminals: Solderable per MIL-STD-202, method 208
Polarity: Cathode band
Marking: Type number
Approx. Weight: "DO34" 0.093 grams,"DO35" 0.13grams
DO-34(GLASS)
MECHANICAL DATA
DO-35(GLASS)
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Zener current (see Table "Characteristics")
Pow er dissipation @ T
amb
=25
Junction temperature
Storage temperature range
VALUE
UNIT
P
tot
T
J
T
s
500
1)
175
-55---+175
mW
SYMBOL
Thermal resistance junction to ambient
Forw ard voltage at I
F
=100mA
MIN
TYP
MAX
300
1)
1.0
UNIT
/W
V
www.gmesemi.com
R
θ
JA
V
F
NOTES: (1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
Document Number BZX55
BL
GALAXY ELECTRICAL
1.
ELECTRICAL CHARACTERISTICS (T
A
=25
Zener Voltage
Range
Type
V
Z
@I
ZT
V
Min.
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C3V9
BZX55C4V3
BZX55C4V7
BZX55C5V1
BZX55C5V6
BZX55C6V2
BZX55C6V8
BZX55C7V5
BZX55C8V2
BZX55C9V1
BZX55C10
BZX55C11
BZX55C12
BZX55C13
BZX55C15
BZX55C16
BZX55C18
BZX55C20
BZX55C22
BZX55C24
BZX55C27
BZX55C30
BZX55C33
BZX55C36
BZX55C39
BZX55C43
BZX55C47
BZX55C51
BZX55C56
BZX55C62
BZX55C68
BZX55C75
BZX55C82
2.28
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
)
Temperature
Coefficient
V
Z
%/K
Min.
Max.
-0.060
-0.060
-0.050
-0.050
-0.050
-0.050
-0.030
0.020
0.020
0.050
0.060
0.070
0.070
0.080
0.090
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
50
10
4.0
2.0
2.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
100
50
40
40
40
40
20
10
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
5.0
5.0
5.0
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
5.0
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Dynamic
Resistance
r
zjT
@I
ZT
r
zjK
@I
ZK
f=1KHz f=1KHz
Test
Current
I
ZT
mA
Reverse Leakage
Current
I
R
@
T
A
=25
A
I
R
@
T
A
=150
@V
R
V
Test
Current
I
ZK
mA
Max.
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
87
85
85
85
85
85
85
75
60
35
25
10
8.0
7.0
7.0
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
200
250
300
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
600
700
700
1000
1000
1000
1500
2000
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
-0.090
-0.090
-0.080
-0.080
-0.080
-0.080
-0.060
-0.050
-0.020
-0.050
0.030
0.030
0.030
0.030
0.030
0.030
0.030
0.030
0.030
0.030
0.030
0.030
0.030
0.040
0.040
0.040
0.040
0.040
0.040
0.040
0.040
0.040
0.040
0.040
0.040
0.040
0.040
0.040
www.gmesemi.com
Document Number BZX55
BL
GALAXY ELECTRICAL
2.
RATINGSANDCHARACTERISTICCURVES
BZX55---SERIES
FIG.1 -- BREAKDAWN CHARACTERISTICS
mA
50
BZX55...
C2V7
40
C3V9
C3V3
C4V7
C5V6
C8V2
C6V8
I
Z
30
C0V8
T
J
=25 C
20
Test current Iz
5mA
10
0
0
0
1
2
3
4
5
6
7
8
9
10 V
V
Z
www.gmesemi.com
Document Number BZX55
BL
GALAXY ELECTRICAL
3.
RATINGSANDCHARACTERISTICCURVES
FIG.2 -- BREAKDOWN CHARACTERISTICS
BZX55---SERIES
mA
30
T
J
=25
0
C
C10
C12
C15
20
BZX55...
I
Z
C18
C22
C27
10
Test current Iz
5mA
C33
0
0
10
20
30
40 V
v
Z
FIG.3 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE
mW
500
400
P
tot
300
200
100
0
0
100
T
amb
200
www.gmesemi.com
Document Number BZX55
BL
GALAXY ELECTRICAL
4.
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