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BZX585B18RSG

Zener Diode, 18V V(Z), 2%, 0.2W, Silicon, Unidirectional, GREEN PACKAGE-2

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
GREEN PACKAGE-2
Reach Compliance Code
compliant
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
JESD-30 代码
R-PDSO-F2
湿度敏感等级
1
元件数量
1
端子数量
2
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
UNIDIRECTIONAL
最大功率耗散
0.2 W
标称参考电压
18 V
表面贴装
YES
技术
ZENER
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
30
最大电压容差
2%
工作测试电流
5 mA
文档预览
BZX585B2V4 - BZX585B51
Taiwan Semiconductor
Small Signal Product
Zener Diode, 2% Tolerance
FEATURES
- Surface mounted device
- Zener voltage range from 2.4V-51V
- Power dissipation 200mW
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
- Case: SOD-523F package
- Moisture sensitivity level (MSL): 1
- Pb free and RoHS compliant
- High temperature soldering guaranteed: 260°C/10s
- Weight: 1.36mg approx.
SOD-523F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power dissipation
Thermal resistance (Junction to Ambient)
Junction temperature
Storage temperature
SYMBOL
P
D
R
θJA
T
J
T
STG
VALUE
200
680
150
- 65 to +150
UNIT
mW
o
C/W
o
C
o
C
Version: C1607
BZX585B2V4 - BZX585B51
Taiwan Semiconductor
Small Signal Product
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Maximum
Zener
Impedance
I
ZT
(mA)
Max
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
Z
ZT
@ I
ZT
(Ω)
100
100
100
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
Z
ZK
@ I
ZK
(Ω)
564
564
564
564
564
564
564
470
451
376
141
75
75
75
94
141
141
141
160
188
188
212
212
235
235
282
282
306
329
329
353
353
376
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
45
18
9
4.5
4.5
2.7
2.7
2.7
1.8
0.9
2.7
1.8
0.9
0.63
0.45
0.18
0.09
0.09
0.09
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
0.045
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.0
25.2
27.3
30.1
33.0
35.7
Maximum
Reverse
Currrent
I
R
(μA)
V
R
(V)
Typical
Temperature
Coefficent
Tc @ I
ZT
(mV/ C)
Min
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
10.0
10.0
10.0
Max
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.0
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
12.0
12.0
12.0
o
Zener Voltage Range
Part
Number
Marking
Test
Current
V
Z
@ I
ZT
(V)
Nom
Min
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.60
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
5
5
5
BZX585B2V4
BZX585B2V7
BZX585B3V0
BZX585B3V3
BZX585B3V6
BZX585B3V9
BZX585B4V3
BZX585B4V7
BZX585B5V1
BZX585B5V6
BZX585B6V2
BZX585B6V8
BZX585B7V5
BZX585B8V2
BZX585B9V1
BZX585B10
BZX585B11
BZX585B12
BZX585B13
BZX585B15
BZX585B16
BZX585B18
BZX585B20
BZX585B22
BZX585B24
BZX585B27
BZX585B30
BZX585B33
BZX585B36
BZX585B39
BZX585B43
BZX585B47
BZX585B51
05
15
25
35
45
55
65
75
85
95
A5
B5
C5
D5
E5
F5
G5
H5
J5
K5
L5
M5
N5
P5
R5
S5
T5
U5
V5
X5
Y5
Z5
-5
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
Version: C1607
BZX585B2V4 - BZX585B51
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
Fig. 2 Effect of Zener voltage on Zener impedance
1000
T
J
=25
°
C
Iz
(AC)
=0.1Iz
(DC)
F=1kHz
Fig.1 Typical forward characteristics
1000
Iz=1mA
Dynamic impedance (Ω)
Forward Current (mA)
100
100
5mA
150°C
20mA
10
10
75°C
25°C
5°C
1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1
1
10
Normal Zener voltage (V)
100
Forward Voltage (V)
Fig.3 Power dissipation vs. ambient temp.
250
Fig. 4 Typical capacitance
1000
0V BIAS
T
J
=25
o
C
Power dissipation (mW)
200
Capacitance (pF)
100
1V BIAS
150
100
BIAS at
50% of Vz NOM
10
50
0
1
0
25
50
75
100
125
150
1
10
Norminal Zener voltage (V)
100
Ambient temperature (
o
C)
Fig.5 Zener breakdown characteristics
100
100
Fig.6 Zener breakdown characteristics
25°C
10
Zener current (mA)
25°C
10
Zener current (mA)
1
1
0.1
0.1
0.01
0
2
4
6
8
10
12
0.01
10
30
50
70
Zener voltage (V)
Zener voltage (V)
Version: C1607
BZX585B2V4 - BZX585B51
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
PART NO.
BZX585Bxxx
(Note1, 2)
Note 2: Whole series with green compound
PACKING CODE
RS
RU
PACKING CODE
SUFFIX
G
PACKAGE
SOD-523F
PACKING
8,000 / 7" Reel
3,000 / 7" Reel
Note 1: "xxx" defines voltage from 2.4V (BZX585B2V4) to 51V (BZX585B51)
EXAMPLE
EXAMPLE P/N
BZX585B51 RSG
PART NO.
BZX585B51
PACKING CODE
RS
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
Version: C1607
BZX585B2V4 - BZX585B51
Taiwan Semiconductor
Small Signal Product
PACKAGE OUTLINE DIMENSIONS
SOD-523F
DIM.
A
B
C
D
E
F
Unit (mm)
Min
0.70
1.50
0.25
1.10
0.50
0.07
Max
0.90
1.70
0.40
1.30
0.77
0.20
Unit (inch)
Min
0.028
0.059
0.010
0.043
0.020
0.003
Max
0.035
0.067
0.016
0.051
0.030
0.008
SUGGESTED PAD LAYOUT
DIM.
X
X1
Y
Unit (mm)
0.6
2.3
0.8
Unit (inch)
0.024
0.091
0.031
Version: C1607
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