DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BZX79 series
Voltage regulator diodes
Product data sheet
Supersedes data of 1999 May 25
2002 Feb 27
NXP Semiconductors
Product data sheet
Voltage regulator diodes
FEATURES
•
Total power dissipation: max. 500 mW
•
Two tolerance series:
±2%,
and approx.
±5%
•
Working voltage range: nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power dissipation:
max. 40 W.
handbook, halfpage
BZX79 series
k
a
MAM239
APPLICATIONS
•
Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24
±2%
(BZX79-B) and
approx.
±5%
(BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
The diodes are type branded.
Fig.1
Simplified outline (SOD27; DO-35) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature
≤
50
°C;
max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 10 mA; see Fig.4
MAX.
0.9
UNIT
V
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
μs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 50
°C;
note 1
T
amb
= 50
°C;
note 2
CONDITIONS
−
MIN.
MAX.
250
UNIT
mA
see Tables 1 and 2 A
−
−
400
500
40
+200
+200
mW
mW
W
°C
°C
t
p
= 100
μs;
square wave;
−
T
j
= 25
°C
prior to surge; see Fig.3
−65
−65
2002 Feb 27
2
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZX79 series
SYMBOL
I
R
PARAMETER
reverse current
BZX79-B/C2V4
BZX79-B/C2V7
BZX79-B/C3V0
BZX79-B/C3V3
BZX79-B/C3V6
BZX79-B/C3V9
BZX79-B/C4V3
BZX79-B/C4V7
BZX79-B/C5V1
BZX79-B/C5V6
BZX79-B/C6V2
BZX79-B/C6V8
BZX79-B/C7V5
BZX79-B/C8V2
BZX79-B/C9V1
BZX79-B/C10
BZX79-B/C11
BZX79-B/C12
BZX79-B/C13
BZX79-B/C15 to BZX79-B/C75
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 4 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 8 V
V
R
= 8 V
CONDITIONS
MAX.
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
UNIT
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
nA
nA
nA
nA
nA
nA
nA
V
R
= 0.7V
Znom
2002 Feb 27
3
Table 1
Per type, BZX79-B/C2V4 to BZX79-B/C24
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 5 mA
Tol.
±2%
(B)
MIN.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.80
11.80
12.70
14.70
15.70
17.60
19.60
21.60
23.50
MAX.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.20
12.20
13.30
15.30
16.30
18.40
20.40
22.40
24.50
Tol. approx.
±5%
(C)
MIN.
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
MAX.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 5 mA
(see Figs 5 and 6)
DIODE CAP. NON-REPETITIVE PEAK
C
d
(pF)
REVERSE CURRENT
I
ZSM
(A)
at f = 1 MHz;
V
R
= 0 V
at t
p
= 100
μs;
T
amb
= 25
°C
2002 Feb 27
4
NXP Semiconductors
Voltage regulator diodes
BZX79-
Bxxx
Cxxx
at I
Ztest
= 1 mA
TYP.
275
300
325
350
375
400
410
425
400
80
40
30
30
40
40
50
50
50
50
50
50
50
60
60
60
MAX.
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
at I
Ztest
= 5 mA
TYP.
70
75
80
85
85
85
80
50
40
15
6
6
6
6
6
8
10
10
10
10
10
10
15
20
25
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
MIN.
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
12.3
14.1
15.9
TYP.
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
15.6
17.6
19.6
MAX.
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
MAX.
BZX79 series
Product data sheet
Table 2
Per type, BZX79-B/C27 to BZX79-B/C75
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 2 mA
Tol.
±2%
(B)
MIN.
27
30
33
36
39
43
47
51
56
62
68
75
26.50
29.40
32.30
35.30
38.20
42.10
46.10
50.00
54.90
60.80
66.60
73.50
MAX.
27.50
30.60
33.70
36.70
39.80
43.90
47.90
52.00
57.10
63.20
69.40
76.50
Tol. approx.
±5%
(C)
MIN.
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
MAX.
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 2 mA
(see Figs 5 and 6)
DIODE CAP. NON-REPETITIVE PEAK
C
d
(pF)
REVERSE CURRENT
I
ZSM
(A)
at f = 1 MHz;
V
R
= 0 V
at t
p
= 100
μs;
T
amb
= 25
°C
2002 Feb 27
5
NXP Semiconductors
Voltage regulator diodes
BZX79-
Bxxx
Cxxx
at I
Ztest
= 0.5 mA at I
Ztest
= 2 mA
TYP.
65
70
75
80
80
85
85
90
100
120
150
170
MAX.
300
300
325
350
350
375
375
400
425
450
475
500
TYP.
25
30
35
35
40
45
50
60
70
80
90
95
MAX.
80
80
80
90
130
150
170
180
200
215
240
255
MIN.
18.0
20.6
23.3
26.0
28.7
31.4
35.0
38.6
42.2
58.8
65.6
73.4
TYP.
22.7
25.7
28.7
31.8
34.8
38.8
42.9
46.9
52.0
64.4
71.7
80.2
MAX.
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
50
50
45
45
45
40
40
40
40
35
35
35
MAX.
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
MAX.
BZX79 series
Product data sheet
模拟电子
