BZX84CxxxET1G Series,
SZBZX84CxxxET1G Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features
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225 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range
−
2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power
−
225 W (8
X
20
ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
SOT−23
CASE 318
STYLE 8
3
Cathode
1
Anode
MARKING DIAGRAM
xxx M
G
G
1
xxx
M
G
= Device Code
= Date Code*
= Pb−Free Package
260C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
(Note 1)
@ T
L
25C
Total Power Dissipation on FR−5 Board,
(Note 2) @ T
A
= 25C
Derated above 25C
Thermal Resistance, Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 3) @ T
A
= 25C
Derated above 25C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Symbol
P
pk
P
D
R
qJA
P
D
R
qJA
T
J
, T
stg
Max
225
Unit
W
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
10,000 /
Tape & Reel
225
1.8
556
300
2.4
417
−65
to
+150
mW
mW/C
C/W
mW
mW/C
C/W
C
BZX84CxxxET1G
SZBZX84CxxxET1G
BZX84CxxxET3G
SZBZX84CxxxET3G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
January, 2012
−
Rev. 8
1
Publication Order Number:
BZX84C2V4ET1/D
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25C
unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
Symbol
V
Z
I
ZT
Z
ZT
I
R
V
R
I
F
V
F
QV
Z
C
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
Maximum Temperature Coefficient of V
Z
Max. Capacitance @ V
R
= 0 and f = 1 MHz
V
Z
V
R
I
R
V
F
I
ZT
V
I
I
F
Zener Voltage Regulator
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2
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25C unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
V
Z1
(V)
@ I
ZT1
= 5 mA
(Note 4)
Device*
BZX84C2V4ET1G
BZX84C2V7ET1G
BZX84C3V0ET1G
BZX84C3V3ET1G
BZX84C3V6ET1G
BZX84C3V9ET1G
BZX84C4V3ET1G
BZX84C4V7ET1G
BZX84C5V1ET1G
BZX84C5V6ET1G
BZX84C6V2ET1G
BZX84C6V8ET1G
BZX84C7V5ET1G
BZX84C8V2ET1G
BZX84C9V1ET1G
BZX84C10ET1G
BZX84C11ET1G
BZX84C12ET1G
BZX84C13ET1G
BZX84C15ET1G
BZX84C16ET1G
BZX84C18ET1G
BZX84C20ET1G
BZX84C22ET1G
BZX84C24ET1G
Device
Marking
BA1
BA2
BA3
BA4
BA5
BA6
BA7
BA9
BB1
BB2
BB3
BB4
BB5
BB6
BB7
BB8
BB9
BC1
BC2
BC3
BC4
BC5
BC6
BC7
BC8
Min
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
Nom
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
Max
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
V
Z2
(V)
@ I
ZT2
= 1
mA
(Note 4)
Min
1.7
1.9
2.1
2.3
2.7
2.9
3.3
3.7
4.2
4.8
5.6
6.3
6.9
7.6
8.4
9.3
10.2
11.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
Max
2.1
2.4
2.7
2.9
3.3
3.5
4.0
4.7
5.3
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14
15.5
17
19
21.1
23.2
25.5
V
Z3
(V)
@ I
ZT3
=20 mA
(Note 4)
Min
2.6
3.0
3.3
3.6
3.9
4.1
4.4
4.5
5.0
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
Max
3.2
3.6
3.9
4.2
4.5
4.7
5.1
5.4
5.9
6.3
6.8
7.4
8.0
8.8
9.7
10.7
11.8
12.9
14.2
15.7
17.2
19.2
21.4
23.4
25.7
Max
Reverse
Leakage
Current
V
I
R
@
R
(V)
mA
50
20
10
5.0
5.0
3.0
3.0
3.0
2.0
1.0
3.0
2.0
1.0
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14
15.4
16.8
q
VZ
C (pF)
(mV/k)
@
@ I
ZT1
=5 mA
V
R
= 0
f=
Min Max 1 MHz
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
0
0
0
0
0
−2.5
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10
11
13
14
16
18
20
22
450
450
450
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
110
105
100
85
85
80
Z
ZT1
(W)
@ I
ZT1
=
5 mA
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
Z
ZT2
(W)
@ I
ZT2
=
1 mA
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
Z
ZT3
(W)
@
I
ZT3
=
20 mA
50
50
50
40
40
30
30
15
15
10
6
6
6
6
8
10
10
10
15
20
20
20
20
25
25
V
Z1
Below
@ I
ZT1
= 2 mA
Device*
BZX84C27ET1G
BZX84C30ET1G
BZX84C33ET1G
BZX84C36ET1G
BZX84C39ET1G
BZX84C43ET1G
BZX84C47ET1G
BZX84C51ET1G
BZX84C56ET1G
BZX84C62ET1G
BZX84C68ET1G
BZX84C75ET1G
Device
Marking
BC9
BD1
BD2
BD3
BD4
BK6
BD5
BD6
BD7
BD8
BD9
BE1
Min
25.1
28
31
34
37
40
44
48
52
58
64
70
Nom
27
30
33
36
39
43
47
51
56
62
68
75
Max
28.9
32
35
38
41
46
50
54
60
66
72
79
Z
ZT1
Below
@ I
ZT1
=
2 mA
80
80
80
90
130
150
170
180
200
215
240
255
V
Z2
Below
@ I
ZT2
=
0.1 mA
Min
25
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
57.4
63.4
69.4
Max
28.9
32
35
38
41
46
50
54
60
66
72
79
Z
ZT2
Below
@ I
ZT4
=
0.5 mA
300
300
325
350
350
375
375
400
425
450
475
500
V
Z3
Below
@ I
ZT3
= 10 mA
Min
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
Max
29.3
32.4
35.4
38.4
41.5
46.5
50.5
54.6
60.8
67
73.2
80.2
Z
ZT3
Below
@ I
ZT3
=
10 mA
45
50
55
60
70
80
90
100
110
120
130
140
Max
Reverse
Leakage
Current
V
I
R
@
R
(V)
mA
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
q
VZ
(mV/k)
Below
@ I
ZT1
= 2
mA
Min
21.4
24.4
27.4
30.4
33.4
37.6
42
46.6
52.2
58.8
65.6
73.4
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
C (pF)
@ V
R
=0
f=
1 MHz
70
70
70
70
45
40
40
40
40
35
35
35
4. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25C
* Include SZ-prefix devices where applicable.
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3
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
2
1
0
−1
V
Z
@ I
ZT
TYPICAL T
C
VALUES
100
VZ, TEMPERATURE COEFFICIENT (mV/
C)
TYPICAL T
C
VALUES
VZ, TEMPERATURE COEFFICIENT (mV/
C)
V
Z
@ I
ZT
10
−2
−3
2
3
4
5
6
7
8
9
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
Figure 1. Temperature Coefficients
(Temperature Range
−
55C to +150C)
Figure 2. Temperature Coefficients
(Temperature Range
−
55C to +150C)
1000
Z ZT, DYNAMIC IMPEDANCE (
)
I
Z
= 1 mA
T
J
= 255C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
1000
IF, FORWARD CURRENT (mA)
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
100
5 mA
20 mA
10
100
10
150C
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE
100
1
0.4
0.5
75C 25C
0C
1.1
1.2
0.6
0.7
0.8
0.9
1.0
V
F
, FORWARD VOLTAGE (V)
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
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4
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
TYPICAL CHARACTERISTICS
1000
0 V BIAS
C, CAPACITANCE (pF)
1 V BIAS
100
BIAS AT
50% OF V
Z
NOM
10
T
A
= 25C
1000
I R , LEAKAGE CURRENT (
A)
100
10
1
0.1
+150C
0.01
+ 25C
−55C
0
10
20
30
40
50
60
70
V
Z
, NOMINAL ZENER VOLTAGE (V)
80
90
0.001
0.0001
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
0.00001
Figure 5. Typical Capacitance
100
100
I Z, ZENER CURRENT (mA)
Figure 6. Typical Leakage Current
T
A
= 25C
T
A
= 25C
I Z , ZENER CURRENT (mA)
10
10
1
1
0.1
0.1
0.01
0
2
4
6
8
V
Z
, ZENER VOLTAGE (V)
10
12
0.01
10
30
50
70
V
Z
, ZENER VOLTAGE (V)
90
Figure 7. Zener Voltage versus Zener Current
(V
Z
Up to 12 V)
100
% OF PEAK PULSE CURRENT
90
80
70
60
50
40
30
20
10
0
0
20
40
t
P
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
t
r
PEAK VALUE I
RSM
@ 8
ms
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE I
RSM
/2 @ 20
ms
60
80
t, TIME (ms)
Figure 9. 8
20
ms
Pulse Waveform
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5
