SENSITRON
SEMICONDUCTOR
Data Sheet
2597,
Rev. –
BZX84C2V4 – BZX84C39
350mW SURFACE MOUNT ZENER DIODE
Features
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Planar Die Construction
350mW Power Dissipation
2.4 – 39V Nominal Zener Voltage
5% Standard Vz Tolerance
Designed for Surface Mount Application
Plastic Material – UL Recognition Flammability
Classification 94V-O
A
TOP VIEW
L
B
C
M
E
H
D
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.37
1.19
2.10
0.89
0.45
1.78
2.65
0.013
0.89
0.45
0.076
Mechanical Data
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Case: SOT-23, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.008 grams (approx.)
Marking: Device Code (See Table Next Page)
K
J
G
TOP VIEW
SOT-23
Max
Min
0.51 0.014
1.40 0.047
2.50 0.083
1.05 0.035
0.61 0.018
2.05
0.07
3.05 0.104
0.15 0.0005
1.10 0.035
0.61 0.018
0.17 0.003
Max
0.020
0.055
0.098
0.041
0.024
0.081
0.120
0.006
0.043
0.024
0.007
In mm
In inch
Maximum Ratings
@T
A
=25° unless otherwise specified
C
Characteristic
Symbol
Value
Unit
Peak Pulse Power Dissipation at T
A
= 25° (Note 1)
C
P
d
350
mW
Forward Voltage @ I
F
= 10mA
V
F
0.9
V
Thermal Resistance Junction to Ambient (Note 1)
R
JA
357
°
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°
C
Note: 1. Valid provided that device terminals are kept at ambient temperature.
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SENSITRON
SEMICONDUCTOR
Data Sheet
2597,
Rev. –
BZX84C2V4 – BZX84C39
350mW SURFACE MOUNT ZENER DIODE
Electrical Characteristics
@T
A
=25° unless otherwise specified
C
Type
Number
(Note 1)
Device
Marking
Code
Zener Voltage Range
(Note 2)
Maximum Zener Impedance
(Note 3)
Max Reverse
Leakage Current
V
Z
@ I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
R
@ V
R
Temp. Coeffi-
cient of Zener
Voltage @ I
ZT
mV / °
C
Nom (V)
Min (V)
Max (V)
(
)
(mA)
(
)
(mA)
(µA)
(V)
Min
Max
BZX84C2V4
BZX84C2V7
BZX84C3
BZX84C3V3
W1
W2
W3
W4
2.4
2.7
3.0
3.3
2.28
2.5
2.8
3.1
2.56
2.9
3.2
3.5
100
100
95
95
5.0
5.0
5.0
5.0
600
600
600
600
1.0
1.0
1.0
1.0
50
20
10
5.0
1.0
1.0
1.0
1.0
-3.5
-3.5
-3.5
-3.5
0
0
0
0
BZX84C3V6
BZX84C3V9
BZX84C4V3
BZX84C4V7
W5
W6
W7
W8
3.6
3.9
4.3
4.7
3.4
3.7
4.0
4.4
3.8
4.1
4.6
5.0
90
90
90
80
5.0
5.0
5.0
5.0
600
600
600
500
1.0
1.0
1.0
1.0
5.0
3.0
3.0
3.0
1.0
1.0
1.0
2.0
-3.5
-3.5
-3.5
-3.5
0
0
0
0.2
BZX84C5V1
BZX84C5V6
BZX84C6V2
BZX84C6V8
W9
WA
WB
WC
5.1
5.6
6.2
6.8
4.8
5.2
5.8
6.4
5.4
6.0
6.6
7.2
60
40
10
15
5.0
5.0
5.0
5.0
480
400
150
80
1.0
1.0
1.0
1.0
2.0
1.0
3.0
2.0
2.0
2.0
4.0
4.0
-2.7
-2.0
0.4
1.2
1.2
2.5
3.7
4.5
BZX84C7V5
BZX84C8V2
BZX84C9V1
BZX84C10
WD
WE
WF
WG
7.5
8.2
9.1
10
7.0
7.7
8.5
9.4
7.9
8.7
9.6
10.6
15
15
15
20
5.0
5.0
5.0
5.0
80
80
100
150
1.0
1.0
1.0
1.0
1.0
0.7
0.5
0.2
5.0
5.0
6.0
7.0
2.5
3.2
3.8
4.5
5.3
6.2
7.0
8.0
BZX84C11
BZX84C12
BZX84C13
BZX84C15
WH
WI
WK
WL
11
12
13
15
10.4
11.4
12.4
13.8
11.6
12.7
14.1
15.6
20
25
30
30
5.0
5.0
5.0
5.0
150
150
170
200
1.0
1.0
1.0
1.0
0.1
0.1
0.1
0.1
8.0
8.0
8.0
10.5
5.4
6.0
7.0
9.2
9.0
10
11
13
BZX84C16
BZX84C18
BZX84C20
BZX84C22
WM
WN
WO
WP
16
18
20
22
15.3
16.8
18.8
20.8
17.1
19.1
21.2
23.3
40
45
55
55
5.0
5.0
5.0
5.0
200
225
225
250
1.0
1.0
1.0
1.0
0.1
0.1
0.1
0.1
11.2
12.6
14
15.4
10.4
12.4
14.4
16.4
14
16
18
20
BZX84C24
BZX84C27
BZX84C30
BZX84C33
WR
WS
WT
WU
24
27
30
33
22.8
25.1
28
31
25.6
28.9
32
35
70
80
80
80
5.0
2.0
2.0
2.0
250
300
300
325
1.0
0.5
0.5
0.5
0.1
0.1
0.1
0.1
16.8
18.9
21
23.1
18.4
21.4
24.4
27.4
22
25.3
29.4
33.4
BZX84C36
BZX84C39
WW
WX
36
39
34
37
38
41
90
130
2.0
2.0
350
350
0.5
0.5
0.1
0.1
25.2
27.3
30.4
33.4
37.4
41.2
Note: 1. Type numbers listed have standard tolerance on the nominal zener voltage of ±5%.
2. Measured with pulses t
p
= 5ms.
3. f = 1KHz
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SENSITRON
SEMICONDUCTOR
Data Sheet
2597,
Rev. –
500
See Note 1
BZX84C2V4 – BZX84C39
350mW SURFACE MOUNT ZENER DIODE
50
T
j
= 25°C
C2V7
C3V9
C5V6
C3V3
C4V7
C6V8
P
d
, Power Dissipation (mW)
I
Z
, ZENER CURRENT (mA)
400
40
C8V2
300
30
200
20
100
10
Test Current I
Z
5.0mA
0
0
0
100
200
0
1
T
A
, Ambient Temperature, (°C)
Fig.
1 Power Derating Curve
3
4
5
6
8
9
7
V
Z
, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
2
10
30
T
j
= 25°C
C10
10
Tj = 25°C
C39
C47
C12
C43
C51
I
Z
, ZENER CURRENT (mA)
20
C15
I
Z
, ZENER CURRENT (mA)
8
6
C18
Test current I
Z
2mA
10
Test current I
Z
5mA
C22
4
Test Current I
Z
2mA
C27
C33
C36
2
0
0
0
10
20
30
V
Z
, ZENER VOLTAGE (V)
Fig. 3 Zener Breakdown Characteristics
1000
40
10
30 40 50 60 70 80 90 100
V
Z
, ZENER VOLTAGE (V)
Fig. 4 Zener Breakdown Characteristics
20
T
j
= 25 °C
C
j
, JUNCTION CAPACITANCE (pF)
V
R
= 1V
V
R
= 2V
100
V
R
= 1V
V
R
= 2V
10
1
10
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Fig. 5 Junction Capacitance vs Nominal Zener Voltage
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SENSITRON
SEMICONDUCTOR
Data Sheet
2597,
Rev. –
BZX84C2V4 – BZX84C39
350mW SURFACE MOUNT ZENER DIODE
ORDERING INFORMATION
Product No.
!
BZX84Cxx-T1
Package Type
SOT-23
Shipping Quantity
3000/Tape & Reel
BZX84Cxx-T3
!
SOT-23
10000/Tape & Reel
Products listed in
bold
are
Sensitron
Preferred
devices.
T1 suffix refers to a 7” reel. T3 suffix refers to a 13” reel.
Shipping quantity given is for minimum packing quantity only. For minimum order
quantity, please consult the Sales Department.
RECOMMENDED FOOTPRINT
0.035
(0.90)
0.079
(2.0)
0.035
(0.90)
0.031
(0.8)
0.037
(0.95)
inches(mm)
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
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medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
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property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
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6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
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