SO
D3
23F
BZX84J series
Single Zener diodes
Rev. 2 — 1 August 2011
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Non-repetitive peak reverse power
dissipation:
40 W
Total power dissipation:
550 mW
AEC-Q101 qualified
Small plastic package suitable for
surface-mounted design
Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
Two tolerance series:
2
% and
5
%
Low differential resistance
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
ZSM
[1]
[2]
Quick reference data
Parameter
forward voltage
non-repetitive peak reverse
power dissipation
Conditions
I
F
= 100 mA
[1]
[2]
Min
-
-
Typ
-
-
Max
1.1
40
Unit
V
W
Pulse test: t
p
300
s;
0.02.
t
p
= 100
s;
square wave; T
j
= 25
C
prior to surge
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Symbol
1
2
006aaa152
[1]
The marking bar indicates the cathode.
NXP Semiconductors
BZX84J series
Single Zener diodes
3. Ordering information
Table 3.
Ordering information
Package
Name
BZX84J-B2V4 to B
ZX84J-C75
[1]
[1]
Type number
Description
plastic surface-mounted package; 2 leads
Version
SOD323F
SC-90
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4.
Marking codes
Marking
code
SL
SM
ST
SU
SV
SW
SZ
TA
TD
TE
TH
TK
TM
TN
TP
S8
S9
SA
SB
Type number
BZX84J-B15
BZX84J-B16
BZX84J-B18
BZX84J-B20
BZX84J-B22
BZX84J-B24
BZX84J-B27
BZX84J-B30
BZX84J-B33
BZX84J-B36
BZX84J-B39
BZX84J-B43
BZX84J-B47
BZX84J-B51
BZX84J-B56
BZX84J-B62
BZX84J-B68
BZX84J-B75
-
Marking
code
SC
SD
SE
SF
SG
SH
SK
SN
SP
SR
SS
SX
SY
TB
TC
TF
TG
TL
-
Type number
BZX84J-C2V4
BZX84J-C2V7
BZX84J-C3V0
BZX84J-C3V3
BZX84J-C3V6
BZX84J-C3V9
BZX84J-C4V3
BZX84J-C4V7
BZX84J-C5V1
BZX84J-C5V6
BZX84J-C6V2
BZX84J-C6V8
BZX84J-C7V5
BZX84J-C8V2
BZX84J-C9V1
BZX84J-C10
BZX84J-C11
BZX84J-C12
BZX84J-C13
Marking
code
U3
U4
U9
UA
UB
UC
UF
UG
UL
UM
UR
US
UU
UV
UW
TR
TS
TT
TU
Type number
BZX84J-C15
BZX84J-C16
BZX84J-C18
BZX84J-C20
BZX84J-C22
BZX84J-C24
BZX84J-C27
BZX84J-C30
BZX84J-C33
BZX84J-C36
BZX84J-C39
BZX84J-C43
BZX84J-C47
BZX84J-C51
BZX84J-C56
BZX84J-C62
BZX84J-C68
BZX84J-C75
-
Marking
code
TV
TW
TX
TY
TZ
U1
U2
U5
U6
U7
U8
UD
UE
UH
UK
UN
UP
UT
-
Type number
BZX84J-B2V4
BZX84J-B2V7
BZX84J-B3V0
BZX84J-B3V3
BZX84J-B3V6
BZX84J-B3V9
BZX84J-B4V3
BZX84J-B4V7
BZX84J-B5V1
BZX84J-B5V6
BZX84J-B6V2
BZX84J-B6V8
BZX84J-B7V5
BZX84J-B8V2
BZX84J-B9V1
BZX84J-B10
BZX84J-B11
BZX84J-B12
BZX84J-B13
BZX84J_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 1 August 2011
2 of 13
NXP Semiconductors
BZX84J series
Single Zener diodes
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
Parameter
forward current
non-repetitive peak reverse
current
non-repetitive peak reverse
power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
t
p
= 100
s;
square wave; T
j
= 25
C
prior to surge
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm
2
.
[1]
Conditions
Min
-
-
Max
250
see
Table 8
and
9
40
550
150
+150
+150
Unit
mA
P
ZSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
[1]
-
-
-
55
65
W
mW
C
C
C
T
amb
25
C
[2]
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
230
55
Unit
K/W
K/W
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 10 mA
I
F
= 100 mA
[1]
Pulse test: t
p
300
s;
0.02.
Conditions
[1]
Min
-
-
Typ
-
-
Max
0.9
1.1
Unit
V
V
BZX84J_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 1 August 2011
3 of 13
NXP Semiconductors
BZX84J series
Single Zener diodes
Table 8.
Characteristics per type; BZX84J-B2V4 to BZX84J-C24
T
j
= 25
C unless otherwise specified.
BZX84J- Sel
xxx
Working
voltage
V
Z
(V)
I
Z
= 5 mA
Min
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
BZX84J_SER
Differential
resistance
r
dif
()
I
Z
= 1 mA I
Z
= 5 mA
Max
400
450
500
500
500
500
600
500
480
400
150
80
80
80
100
150
150
150
Max
100
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
Reverse
current
I
R
(A)
Temperature
coefficient
S
Z
(mV/K)
I
Z
= 5 mA
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
Max
2.45
2.6
2.75
2.9
3.06
3.2
3.37
3.5
3.67
3.8
3.98
4.1
4.39
4.6
4.79
5
5.2
5.4
5.71
6
6.32
6.6
6.94
7.2
7.65
7.9
8.36
8.7
9.28
9.6
10.2
10.6
11.2
11.6
12.2
12.7
Max
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
V
R
(V) Min
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
2.7
2
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7
8
9
10
Max
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
108
105
Max
12
12
12
12
12
12
12
12
12
12
12
12
4
4
3
3
2.5
2.5
2.35
2.2
2.65
2.5
2.94
2.8
3.23
3.1
3.53
3.4
3.82
3.7
4.21
4
4.61
4.4
5
4.8
5.49
5.2
6.08
5.8
6.66
6.4
7.35
7
8.04
7.7
8.92
8.5
9.8
9.4
10.8
10.4
11.8
11.4
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 1 August 2011
4 of 13
NXP Semiconductors
BZX84J series
Single Zener diodes
Table 8.
Characteristics per type; BZX84J-B2V4 to BZX84J-C24
…continued
T
j
= 25
C unless otherwise specified.
BZX84J- Sel
xxx
Working
voltage
V
Z
(V)
I
Z
= 5 mA
Min
13
15
16
18
20
22
24
B
C
B
C
B
C
B
C
B
C
B
C
B
C
[1]
[2]
Differential
resistance
r
dif
()
I
Z
= 1 mA I
Z
= 5 mA
Max
170
200
200
225
225
250
250
Max
10
15
20
20
20
25
30
Reverse
current
I
R
(A)
Temperature
coefficient
S
Z
(mV/K)
I
Z
= 5 mA
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
Max
13.3
14.1
15.3
15.6
16.3
17.1
18.4
19.1
20.4
21.2
22.4
23.3
24.5
25.6
Max
0.1
0.05
0.05
0.05
0.05
0.05
0.05
V
R
(V) Min
8
10.5
11.2
12.6
14
15.4
16.8
7
9.2
10.4
12.4
14.4
16.4
18.4
Max
11
13
14
16
18
20
22
Max
103
99
97
93
88
84
80
Max
2.5
2
1.5
1.5
1.5
1.25
1.25
12.7
12.4
14.7
13.8
15.7
15.3
17.6
16.8
19.6
18.8
21.6
20.8
23.5
22.8
f = 1 MHz; V
R
= 0 V
t
p
= 100
s;
square wave; T
j
= 25
C
prior to surge
BZX84J_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 1 August 2011
5 of 13
嵌入式系统
