BZX85B...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
Sharp edge in reverse characteristics
Low reverse current
Low noise
Very high stability
Applications
94 9369
Voltage stabilization
Order Instruction
Type
BZX85B2V7
Ordering Code
BZX85B2V7–TAP
Remarks
Ammopack
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
l=4 mm, T
L
=25
°
C
Type
Symbol
P
V
T
j
T
stg
Value
1.3
175
–65...+175
Unit
W
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4 mm, T
L
=constant
Symbol
R
thJA
Value
110
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1
Unit
V
Document Number 85607
Rev. A4, 12-Mar-01
www.vishay.com
1 (5)
BZX85B...
Vishay Telefunken
Type
BZX85B...
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
V
Znom 1)
V
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
I
ZT
for V
ZT
and r
zjT
V
2.64 to 2.76
< 20
2.94 to 3.06
< 20
3.24 to 3.36
< 20
3.52 to 3.68
< 20
3.82 to 3.98
< 15
4.22 to 4.38
< 13
4.60 to 4.80
< 13
5.00 to 5.20
< 10
5.48 to 5.72
<7
6.08 to 6.32
<4
6.66 to 6.94
< 3.5
7.35 to 7.65
<3
8.04 to 8.36
<5
8.92 to 9.28
<5
9.80 to 10.20
<7
10.78 to 11.22
<8
11.76 to 12.24
<9
12.74 to 13.26
< 10
14.70 to 15.30
< 15
15.70 to 16.30
< 15
17.64 to 18.36
< 20
19.60 to 20.40
< 24
21.55 to 22.45
< 25
23.5 to 24.5
< 25
26.4 to 27.6
< 30
29.4 to 30.6
< 30
32.4 to 33.6
< 35
35.3 to 36.7
< 40
38.2 to 39.8
< 50
r
zjk
at I
ZK
mA
< 400
1
< 400
1
< 400
1
< 500
1
< 500
1
< 500
1
< 500
1
< 500
1
< 400
1
< 300
1
< 300
1
< 200
0.5
< 200
0.5
< 200
0.5
< 200
0.5
< 300
0.5
< 350
0.5
< 400
0.5
< 500
0.5
< 500
0.5
< 500
0.5
< 600
0.5
< 600
0.5
< 600
0.5
< 750 0.25
< 1000 0.25
< 1000 0.25
< 1000 0.25
< 1000 0.25
I
R
at V
R
A
V
< 150
1
< 100
1
< 40
1
< 20
1
< 10
1
<3
1
<3
1
<1
1.5
<1
2
<1
3
<1
4
<1
4.5
<1
6.2
<1
6.8
< 0.5
7.5
< 0.5
8.2
< 0.5
9.1
< 0.5
10
< 0.5
11
< 0.5
12
< 0.5
13
< 0.5
15
< 0.5
16
< 0.5
18
< 0.5
20
< 0.5
22
< 0.5
24
< 0.5
27
< 0.5
30
TK
VZ
%/K
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.07 to –0.02
–0.07 to –0.01
–0.03 to +0.04
–0.01 to +0.04
0 to +0.045
+0.01 to +0.055
+0.015 to +0.06
+0.02 to +0.065
0.03 to 0.07
0.035 to 0.075
0.04 to 0.08
0.045 to 0.08
0.045 to 0.085
0.05 to 0.085
0.055 to 0.09
0.055 to 0.09
0.06 to 0.09
0.06 to 0.09
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
0.06 to 0.095
mA
80
80
80
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
10
8
8
8
8
6
W
W
m
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2 (5)
Document Number 85607
Rev. A4, 12-Mar-01
BZX85B...
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
2.0
P
tot
– Total Power Dissipation ( W )
C
D
– Diode Capacitance ( pF )
1000
1.6
100
V
R
= 0V
V
R
= 2V
V
R
= 5V
V
R
= 20V
V
R
= 30V
1.2
l=4mm
0.8
l=20mm
0.4
0
–50
l=10mm
10
1
0
50
100
150
200
95 9616
f = 1 MHz
T
amb
= 25°C
0
10
20
30
40
50
60
95 9612
T
amb
– Ambient Temperature (
°C
)
V
Z
– Z-Voltage ( V )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
250
r
Z
– Differential Z-Resistance (
W
)
Figure 3. Diode Capacitance vs. Z–Voltage
1000
I
Z
=1mA
100
2mA
5mA
10mA
20mA
10
200
150
l
100
50
0
0
5
10
15
T
L
=constant
20
25
30
l – Lead Length ( mm )
l
1
1
95 9615
10
V
Z
– Z-Voltage ( V )
100
95 9613
Figure 2. Thermal Resistance vs. Lead Length
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
1000
t
p
/T=0.01
t
p
/T=0.1
100
t
p
/T=0.5
t
p
/T=0.2
10
Single Pulse
t
p
/T=0.05
t
p
/T=0.02
Figure 4. Differential Z–Resistance vs. Z–Voltage
D
T=T
jmax
–T
amb
R
thJA
=110K/W
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
1
10
–1
10
0
10
1
t
p
– Pulse Length ( ms )
10
2
D
T/Z
thp
)
1/2
)/(2r
zj
)
10
3
95 9614
Figure 5. Thermal Response
Document Number 85607
Rev. A4, 12-Mar-01
www.vishay.com
3 (5)
BZX85B...
Vishay Telefunken
Dimensions in mm
Cathode Identification
technical drawings
according to DIN
specifications
94 9368
∅
0.85 max.
∅
2.5 max.
Standard Glass Case
54 B 2 DIN 41880
JEDEC DO 41
Weight max. 0.3 g
26 min.
4.1 max.
26 min.
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4 (5)
Document Number 85607
Rev. A4, 12-Mar-01
BZX85B...
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85607
Rev. A4, 12-Mar-01
www.vishay.com
5 (5)
