(5 ±1 seconds and charge/discharge not exceeding 50 mA)
0.1%
1,000 megohm microfarads or 100 GΩ
(Rated voltage applied for 120 ±5 seconds @ 25°C)
Parameters/Characteristics
To obtain IR limit, divide MΩ-µF value by the capacitance and compare to GΩ limit. Select the lower of the two limits.
Capacitance and dissipation factor (DF) measured under the following conditions:
1 MHz ±100 kHz and 1.0 Vrms ± 0.2 V if capacitance ≤ 1,000 pF
1 kHz ±50 Hz and 1.0 Vrms ± 0.2 V if capacitance > 1,000 pF
Note: When measuring capacitance it is important to ensure the set voltage level is held constant. The HP4284 and Agilent E4980 have a feature known as
Automatic Level Control (ALC). The ALC feature should be switched to "ON."
Post Environmental Limits
High Temperature Life, Biased Humidity, Moisture Resistance
Product Availability and Chip Thickness Codes – See Table 2 for Chip Thickness Dimensions
BB
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DC
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DD
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DC
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DD
DD
DD
DE
DE
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DE
DC
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DD
DF
DG
DG
DG
10
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DD
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DC
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DD
DD
DD
DE
DE
DE
DE
DC
DC
DC
DC
DC
DC
DC
DC
DC
DC
DD
DF
DG
DG
DG
16
DC
DC
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DC
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DC
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DC
DC
DC
DC
DC
DC
DC
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DD
DD
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DC
DC
DC
DC
DD
DD
DD
DE
DE
DE
DE
DC
DC
DC
DC
DC
DC
DC
DC
DC
DC
DD
DF
DG
DG
DG
25
DC
DC
DC
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DC
DC
DC
DC
DC
DC
DC
DC
DC
DC
DC
DC
DC
DC
DC
DC
DC
DC
DD
DD
DD
DD
DC
DC
DC
DC
DD
DD
DD
DE
DE
DE
DE
DC
DC
DC
DC
DC
DC
DC
DC
DD
DD
DF
DC
DC
DC
DC
DC
DC
DC
DC
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DD
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DD
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DC
DC
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DD
DE
DG
DC
DC
DC
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DC
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DC
DD
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EB
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10
8
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16
4
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ED
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EC
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25
3
EB
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ED
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EF
50
5
EB
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EC
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ED
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EE
EC
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F
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UD
UD
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UD
UD
UD
UD
UD
UD
UD
UD
UD
UD
UD
UD
UD
UD
UD
UD
UD
UD
UD
UD
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UD
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UD
UD
UD
UD
UD
UD
UD
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UD
UD
UD
UD
UD
UD
UD
UD
UD
UD
UD
UD
200
200
200
Cap
Capacitance
Code
Voltage Code
8
4
3
5
2
1
8
4
3
5
1
2
8
4
3
5
1
2
Series
C0402
C0603
C0805
C1206
UD = Under development
KEMET reserves the right to substitute product with an improved temperature characteristic, tighter capacitance tolerance and/or higher voltage capability within
the same form factor (configuration and dimensions).
These products are protected under US Patents 7,172,985 and 7,670,981, other patents pending, and any foreign counterparts.
KEMET reserves the right to substitute product with an improved temperature characteristic, tighter capacitance tolerance and/or higher voltage capability within
the same form factor (configuration and dimensions).
These products are protected under US Patents 7,172,985 and 7,670,981, other patents pending, and any foreign counterparts.
O 引言 在微电子器件领域,针对SiC器件的研究较多,已经取得了较大进展,而在MEMS领域针对SiC器件的研究仍有许多问题亟待解决。在国内,SiC MEMS的研究非常少,因而进行SiC高温MEMS压力传感器的研究具有开创意义。碳化硅(SiC)具有优良的耐高温,抗腐蚀,抗辐射性能,因而使用SiC来制作压力传感器,能够克服Si器件高温下电学、机械、化学性能下降的缺陷,稳定工作于高温环境,具有光明...[详细]