DIGITRON SEMICONDUCTORS
C228 SERIES
C228()3 SERIES
C229 SERIES
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off state voltage
(1)
(T
J
= -40 to +125°C)
C228F, C228F3, C229F
C228A, C228A3, C229A
C228B, C228B3, C229B
C228C, C228C3, C229C
C228D, C228D3, C229D
C228E, C228E3, C229E
C228M, C228M3, C229M
Peak non-repetitive reverse voltage
(T
J
= -40 to +125°C)
C228F, C228F3, C229F
C228A, C228A3, C229A
C228B, C228B3, C229B
C228C, C228C3, C229C
C228D, C228D3, C229D
C228E, C228E3, C229E
C228M, C228M3, C229M
Forward current RMS
Peak surge current
(one cycle, 60Hz, T
C
= -40 to +125°C)
Circuit fusing considerations
(T
C
= -40 to +125°C, t = 8.3ms)
Peak gate power
Average gate power
Peak forward gate current
Operating junction temperature range
Storage temperature range
Mounting torque
Symbol
Value
Unit
V
RRM
, V
DRM
50
100
200
300
400
500
600
Volts
V
RSM
75
150
300
400
500
600
720
35
300
370
5
0.5
2
-40 to +125
-40 to +150
30
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
Amps
Amps
A
2
s
Watts
Watts
Amps
°C
°C
In. lb.
Note 1: V
DRM
and V
RRM
for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a
positive bias applied to the gate concurrently with a negative potential on the anode.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
C228 and C229 SERIES
C228()3 SERIES
Symbol
R
ӨJC
Maximum
1.70
1.85
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Peak forward or reverse blocking current
(Rated V
DRM
or V
RRM
, gate open)
T
C
= 25°C
T
C
= 125°C
Forward “on” voltage
(I
TM
= 100A peak)
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
Symbol
Min.
Typ.
Max.
Unit
I
DRM
, I
RRM
-
-
-
-
-
-
10
3
1.9
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130128
µA
mA
Volts
V
T
DIGITRON SEMICONDUCTORS
C228 SERIES
C228()3 SERIES
C229 SERIES
Characteristic
Gate trigger current (continuous dc)
(V
D
= 12V, R
L
= 80Ω, T
C
= 25°C)
(V
D
= 6V, R
L
= 80Ω, T
C
= -40°C)
Gate trigger voltage (continuous dc)
(V
D
= 12V, R
L
= 80Ω, T
C
= 25°C)
(V
D
= 6V, R
L
= 80Ω, T
C
= -40°C)
Gate trigger voltage
(Rated V
DRM
, R
L
= 1000Ω, T
C
= 125°C)
Holding current
(Anode voltage = 24V, gate open)
T
C
= 25°C
T
C
= -40°C
Turn-on time
(t
d
+t
r
)
(I
TM
= 35A, I
GT
= 40mA)
Turn-off time
(I
TM
= 10A, I
R
= 10A)
(I
TM
= 10A, I
R
= 10A, T
C
= 100°C)
Forward voltage application rate
(T
C
= 100°C)
SILICON CONTROLLED RECTIFIER
Symbol
I
GT
Min.
-
-
-
-
0.2
Typ.
-
-
-
-
-
Max.
40
80
2.5
3
-
Unit
mA
V
GT
Volts
V
GT
Volts
I
H
-
-
-
-
-
-
-
-
1
20
35
50
75
150
-
-
-
-
mA
t
on
µs
t
off
µs
dv/dt
V/µs
MECHANICAL CHARACTERISTICS
Case
Marking
Digi PF1 (C229 SERIES)
Body painted, alpha-numeric
DIGI PF1
Inches
Min
Max
0.501
0.505
-
0.160
0.085
0.095
0.060
0.070
0.300
0.350
-
1.050
-
0.670
0.055
0.085
Millimeters
Min
Max
12.730
12.830
-
4.060
2.160
2.410
1.520
1.780
7.620
8.890
-
26.670
-
17.020
1.400
2.160
A
F
G
H
J
K
L
Q
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130128
DIGITRON SEMICONDUCTORS
C228 SERIES
C228()3 SERIES
C229 SERIES
MECHANICAL CHARACTERISTICS
Case
Marking
Polarity
TO-48 (C228, C228()3 SERIES)
Body painted, alpha-numeric
Cathode is stud
SILICON CONTROLLED RECTIFIER
TO-48
Inches
Min
Max
0.604
0.614
0.551
0.559
1.050
1.190
0.135
0.160
-
0.265
0.420
0.455
0.620
0.670
0.300
0.350
0.055
0.085
0.501
0.505
Millimeters
Min
Max
15.340
15.600
14.000
14.200
2.670
30.230
3.430
4.060
-
6.730
10.670
11.560
15.750
17.020
7.620
8.890
1.400
2.160
12.730
12.830
A
B
C
F
H
J
K
L
Q
T
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130128
