Cree
®
UltraThin™ Gen III LEDs
Data Sheet
CxxxUT190-Sxxxx-31
Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC
®
substrate to deliver
superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low
forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications and the
ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner
form factors are required.
FEATURES
•
•
Small Chip – 190 x 190 x 50 μm
UT LED Performance
–
–
–
•
450 & 460 nm – 12 mW min.
470 nm – 10 mW min.
527 nm – 3.0 mW min.
APPLICATIONS
•
•
•
•
Mobile Phone Keypads
Audio Product Display Lighting
Mobile Appliance Keypads
Automotive Applications
Low Forward Voltage
–
2.9 V Typical at 5 mA
•
•
Single Wire Bond Structure
Class 2 ESD Rating
CxxxUT190-Sxxxx-31 Chip Diagram
Top View
Die Cross Section
Bottom View
A
CPR3EP Rev
Data Sheet:
Junction
160 x 160 μm
Anode (+)
85-μm Diameter
190 x 190 μm
Bottom Surface
150 x 150 μm
Cathode (-)
80 x 80 μm
t = 50 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at T
A
= 25°C
Notes 1&3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 5 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450UT190-Sxxxx-31
C460UT190-Sxxxx-31
C470UT190-Sxxxx-31
C527UT190-Sxxxx-31
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Top Area (μm)
Chip Bottom Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Backside Contact Metal Area (μm)
2.7
2.7
2.7
2.7
Typ.
2.9
2.9
2.9
3.0
Max.
3.1
3.1
3.1
3.2
Note 3
CxxxUT190-Sxxxx-31
30 mA
100 mA
125°C
5 V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Reverse Current
[I(Vr=5 V), μA]
Max.
2
2
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
21
21
22
35
CxxxUT190-Sxxxx-31
Dimension
160 x 160
190 x 190
150 x 150
50
85
1.2
80 x 80
Tolerance
± 25
± 25
± 25
± 10
-10/+15
± 0.5
± 25
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the minimum ESD ratings shown. The ESD classification of
Class 2 is based on sample testing according to MIL-STD-883E.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
4. Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific
application.
Notes:
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3EP Rev A
Standard Bins for CxxxUT190-Sxxxx-31
LED chips are sorted to the radiant
flux and dominant wavelength bins shown. Sorted die sheets contain die from
only one bin. Sorted die kit (CxxxUT190-Sxxxx-31) orders may be filled with any or all bins (CxxxUT190-xxxx-31)
contained in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are
measured at If = 5 mA.
C450UT190-S1200-31
C450UT190-0317-31
C450UT190-0318-31
C450UT190-0314-31
C450UT190-0310-31
C450UT190-0306-31
C450UT190-0319-31
C450UT190-0315-31
C450UT190-0311-31
C450UT190-0307-31
C450UT190-0320-31
C450UT190-0316-31
C450UT190-0312-31
C450UT190-0308-31
Radiant Flux
18.0 mW
C450UT190-0313-31
16.0 mW
C450UT190-0309-31
14.0 mW
C450UT190-0305-31
12.0 mW
445 nm
447.5 nm
450 nm
Dominant Wavelength
C460UT190-S1200-31
452.5 nm
455 nm
C460UT190-0317-31
C460UT190-0318-31
C460UT190-0314-31
C460UT190-0310-31
C460UT190-0306-31
C460UT190-0319-31
C460UT190-0315-31
C460UT190-0311-31
C460UT190-0307-31
C460UT190-0320-31
C460UT190-0316-31
C460UT190-0312-31
C460UT190-0308-31
Radiant Flux
18.0 mW
C460UT190-0313-31
16.0 mW
C460UT190-0309-31
14.0 mW
C460UT190-0305-31
12.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3EP Rev A
Standard Bins for CxxxUT190-Sxxxx-31 (continued)
LED chips are sorted to the radiant
flux and dominant wavelength bins shown. Sorted die sheets contain die from
only one bin. Sorted die kit (CxxxUT190-Sxxxx-31) orders may be filled with any or all bins (CxxxUT190-xxxx-31)
contained in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are
measured at If = 5 mA.
C470UT190-S1000-31
C470UT190-0313-31
C470UT190-0314-31
C470UT190-0310-31
C470UT190-0306-31
C470UT190-0302-31
C470UT190-0315-31
C470UT190-0311-31
C470UT190-0307-31
C470UT190-0303-31
C470UT190-0316-31
C470UT190-0312-31
C470UT190-0308-31
C470UT190-0304-31
Radiant Flux
16.0 mW
C470UT190-0309-31
14.0 mW
C470UT190-0305-31
12.0 mW
C470UT190-0301-31
10.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
C527UT190-S0300-31
Radiant Flux
C527UT190-0307-31
C527UT190-0308-31
C527UT190-0305-31
C527UT190-0302-31
C527UT190-0309-31
C527UT190-0306-31
C527UT190-0303-31
7.0 mW
C527UT190-0304-31
5.0 mW
C527UT190-0301-31
3.0 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3EP Rev A
500%
Relative Light Intensity
400%
300%
Standard Bins for CxxxUT190-Sxxxx-31
200%
LED chips are sorted to the radiant
flux and dominant wavelength bins shown. Sorted die sheets contain die from
only one bin. Sorted die kit (CxxxUT190-Sxxxx-31) orders may be filled with any or all bins (CxxxUT190-xxxx-31)
0%
contained in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are
0
5
10
15
20
25
30
measured at If = 5 mA.
If (mA)
100%
Forward Current vs. Forward Voltage
30
4
Wavelength Shift vs. Forward Current
Dominant Wavelength Shift (nm)
25
20
2
0
-2
-4
-6
-8
If (mA)
15
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
-10
-12
0
5
10
15
20
25
30
Vf (V)
If (mA)
Relative Intensity vs. Forward Current
500%
Relative Light Intensity
400%
300%
200%
100%
0%
0
5
10
15
20
25
30
If (mA)
Wavelength Shift vs. Forward Current
4
Dominant Wavelength Shift (nm)
2
0
-2
-4
-6
-8
-10
-12
0
5
10
15
20
25
30
If (mA)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3EP Rev A
微控制器 MCU
