TR5270™ LEDs
Data Sheet
CxxxTR5270-Sxx00
(175-μm)
CxxxTR5270-Sxx00-3
(250-μm)
Cree’s TR5270 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
and general-illumination markets. The TR5270 LEDs are among the brightest in the top-view market while delivering
a low forward voltage, resulting in a very bright and highly efficient solution. The TR5270 is available in two chip
thicknesses: 175 µm and 250 µm. The 250-µm-thick version offers 5% improvement brightness over the 175-µm
version due the increased bevel area. The design is optimally suited for industry-standard top-view packages.
FEATURES
•
Rectangular LED RF Performance
–
–
•
•
•
•
•
450 nm – 200 mW min
460 nm – 180 mW min
APPLICATIONS
•
•
•
Large LCD Backlighting
–
Television
General Illumination
Medium LCD Backlighting
–
–
•
•
Portable PCs
Monitors
Adhesive Die Attach
Low Forward Voltage – 3.2 V Typical at 120 mA
Maximum DC Forward Current - 250 mA
Class 2 ESD Rating
InGaN Junction on Thermally Conductive SiC
Substrate
LED Video Displays
White LEDs
CxxxTR5270-Sxx00
(175-µm) Chip Diagram
Top View
Die Cross Section
Bottom View
.-
CPR3ET Rev
Data Sheet:
Cathode (-)
98-μm diameter
TR5270 LED
520 x 700 μm
Anode (+)
90-μm diameter
Bottom Surface
347 x 527 μm
t = 175 μm
Subject to change without notice.
www.cree.com
1
CxxxTR5270-Sxx00-3 (250-µm) Chip Diagram
Top View
Die Cross Section
Bottom View
Cathode (-)
98-μm diameter
TR5270 LED
520 x 700 μm
Anode (+)
90-μm diameter
Bottom Surface
260 x 440 μm
t = 250 μm
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter Anode (μm)
Au Bond Pad Thicknesses (μm)
Au Bond Pad Diameter Cathode (μm)
Bottom Area (μm)
CxxxTR5270-Sxx00
(175-µm)
Dimension
450 x 640
520 x 700
175
90
1.0
98
347 x 527
Tolerance
±35
±35
±15
±10
±0.5
±10
±35
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter Anode (μm)
Au Bond Pad Thicknesses (μm)
Au Bond Pad Diameter Cathode (μm)
Bottom Area (μm)
CxxxTR5270-Sxx00-3
(250-µm)
Dimension
450 x 640
520 x 700
250
90
1.0
98
260 x 440
Tolerance
±35
±35
±15
±10
±0.5
±10
±45
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3ET Rev. -
Maximum Ratings at T
A
= 25°C
Notes 1, 3 & 4
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 120 mA
Part Number
Forward Voltage (V
f
, V)
Note 3
CxxxTR5270-Sxx00 and CxxxTR5270-Sxx00-3
250 mA
300 mA
150°C
5 V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Reverse Current
[I(Vr=5V), μA]
Max.
2
2
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
21
20
21
C450TR5270-Sxx000
C460TR5270-Sxx000
C450TR5270-Sxx000-3
C460TR5270-Sxx000-3
Max If (mA)
2.7
3.2
2.7
3.2
Max Vf @Max If (V)
3.2
Max
2.7
(Deg C)
Tj
2.7
3.2
Max Power (W)
Min.
Typ.
Max.
250
3.5
3.5
3.5
3.5
150
3.5
0.875
Notes:
1.
2.
3.
4.
Maximum ratings are package-dependent. The above ratings were determined using lamps in chip-on-MCPCB (metal core PCB) packages for
characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations.
Assembly processing temperature must not exceed 325°C (< 5 seconds).
Rth (
j-A)
=
If @ Tamb
Tamb
Tamb
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET).
250
25
25
25
The RAET procedures are designed to approximate the maximum ESD ratings shown.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 120
250
141.25
132.5
123.75
mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values
0
150
150
150
expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages
(with Hysol OS4000 epoxy encapsulant and clear epoxy die attach). Optical characteristics measured in an integrating sphere using Illuminance E.
The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be
designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance.
Thermal Resistance (C/W)
10
20
30
300
Maximum Forward Current (mA)
250
200
150
100
50
0
50
Rth
j-a
= 10
Rth
j-a
= 20
Rth
j-a
= 30
Rth
j-a
= 40
C/W
C/W
C/W
C/W
75
100
125
150
175
Ambient Temperature (C)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3ET Rev. -
Standard Bins for CxxxTR5270-Sxx00
LED chips are sorted to the radiant
flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxTR5270-Sxxxx or CxxxTR5270-Sxxxx-3 ) orders may be filled with any or all bins
(CxxxTR5270-xxxx or CXXXTR5270-xxxx-3) contained in the kit. All radiant flux and dominant wavelength values shown
and specified are at If = 120 mA.
Radiant Flux (mW)
C450TR5270-S20000 (175-µm thick)
C450TR5270-0209
C450TR5270-0210
C450TR5270-0206
C450TR5270-0211
C450TR5270-0207
C450TR5270-0212
C450TR5270-0208
220
C450TR5270-0205
200
445
447.5
450
Dominant Wavelength (nm)
452.5
455
Radiant Flux (mW)
C460TR5270-S18000 (175-µm thick)
C460TR5270-0205
C460TR5270-0206
C460TR5270-0202
C460TR5270-0207
C460TR5270-0203
C460TR5270-0208
C460TR5270-0204
200
C460TR5270-0201
180
455
457.5
460
Dominant Wavelength (nm)
462.5
465
Radiant Flux (mW)
C450TR5270-S21000-3 (250-µm thick)
C450TR5270-0309-3
C450TR5270-0310-3
C450TR5270-0306-3
C450TR5270-0311-3
C450TR5270-0307-3
C450TR5270-0312-3
C450TR5270-0308-3
230
C450TR5270-0305-3
210
445
447.5
450
Dominant Wavelength (nm)
452.5
455
Radiant Flux (mW)
C460TR5270-S19000-3 (250-µm thick)
C460TR5270-0305-3
C460TR5270-0306-3
C460TR5270-0302-3
C460TR5270-0307-3
C460TR5270-0303-3
C460TR5270-0308-3
C460TR5270-0304-3
210
C460TR5270-0301-3
190
455
457.5
460
Dominant Wavelength (nm)
462.5
465
Note: The radiant-flux values above are representative of the die in a Cree 5-mm lamp.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3ET Rev. -
Characteristic Curves
These are representative measurements for the TR5270 LED product. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Relative Intensity vs. Forward Current
200%
100%
Relative Light Intensity Vs Junction Temperature
95%
90%
85%
80%
75%
70%
Relative Light Intensity
150%
125%
100%
75%
50%
25%
0%
0
62.5
125
187.5
250
Relative Light Intensity
175%
25
50
75
100
125
150
If (mA)
Junction Temperature (°C)
Wavelength Shift vs. Forward Current
Dominant Wavelength Shift (nm)
Dominant Wavelength Shift (nm)
3
2
1
0
-1
-2
-3
0
62.5
125
187.5
250
6
5
4
3
2
1
0
-1
-2
Dominant Wavelength Shift Vs Junction Temperature
25
50
75
100
125
150
If (mA)
Junction Temperature (°C)
Forward Current vs. Forward Voltage
200
175
0
-0.050
Voltage Shift Vs Junction Temperature
If (mA)
125
100
75
50
25
0
0
1
2
3
4
Voltage Shift (V)
150
-0.100
-0.150
-0.200
-0.250
-0.300
-0.350
-0.400
25
50
75
100
125
150
Vf (V)
Junction Temperature (°C)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5270 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3ET Rev. -
